AO4435/L uses advanced trench technology provide excellent RDS(ON), ul
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AO4435 P-Channel MOSFET
AO4435/L uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge with gate rating. This device suitable load switch applications. AO4435 AO4435L electrically identical. -RoHS Compliant -AO4435L Halogen Free
-30V (VGS -20V) -10.5A RDS(ON) (VGS -20V) RDS(ON) (VGS -10V) RDS(ON) (VGS -5V) TESTED! Ciss, Coss, Crss Tested
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
-10.5
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Avalanche Current Repetitive avalanche energy 0.3mH Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady State Steady State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions -250µA, -30V, 55°C ±25V -250µA -10V, -20V, -11A RDS(ON) Static Drain-Source On-Resistance TJ=125°C -10V, -10A -5V, Forward Transconductance -5V, -10A -1A,VGS Diode Forward Voltage Maximum Body-Diode Continuous Current -1.7 -0.74 -3.5 1130 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-10A VGS=-10V, VDS=-15V, RL=1.5, RGEN=3 IF=-10A, dI/dt=100A/µs 1400 -2.3 ±100 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with 25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. current rating based thermal resistance rating. ratings based frequency duty cycles keep j=25C. Rev6: June 2009
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -ID(A) VDS=
-4.5V VGS=
125°C 25°C
-VDS (Volts) Figure On-Region Characteristics Normalized On-Resistance RDS(ON) VGS=-20V VGS=-10V VGS=-5V
-VGS(Volts) Figure Transfer Characteristics VGS=-10V ID=-10A VGS=-20V ID=-11A VGS=-5V ID=-5A
Temperature (°C) Figure On-Resistance Junction Temperature
Figure On-Resistance Drain Current Gate Voltage
ID=-11A
1E+01 1E+00
1E-01 RDS(ON) 1E-02 1E-03 1E-04 25°C 1E-05 1E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C
125°C
-VGS (Volts) Figure On-Resistance Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-10A 2000
Capacitance (pF)
1500
Ciss
1000 Coss Crss
-VDS (Volts) Figure Capacitance Characteristics
1000 RDS(ON) limited (Amps) 0.01 -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note TJ(Max)=150°C TA=25°C 10µs 100µs 10ms 100ms
1000
TJ(Max)=150°C TA=25°C
Power
0.00001
0.001
1000
Pulse Width Figure Single Pulse Power Rating Junctionto-Ambient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 Single Pulse
0.001 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance(Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
harge Test ircuit aveform
-10V
Unclamped Inductive Switching (UIS) Test Circuit Waveforms
Diode Recovery Test Circuit aveforms
-Vds
Alpha Omega Semiconductor, Ltd.
harge
Resistive Switching Test Circuit Waveforms
td(on) td(off)
LIAR
BVDSS
-Isd
dI/dt
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