GP1S036HEZ Phototransistor Output, Transmissive Photointerrupter

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GP1S036HEZ Phototransistor Output, Transmissive Photointerrupter

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GP1S036HEZ
GP1S036HEZ
Phototransistor Output, Transmissive Photointerrupter with Tilt Direction (4-direction) Detecting
GP1S36J0000F compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter detector molding that provides ball built-in case sensing. compact package series result unique technology combing transfer injection molding. This 2-phase output device, suitable detection position direction).
Agency approvals/Compliance
Compliant with RoHS directive
Applications
General purpose detection device direction. Example Camera, DSC, Camcorder, Robot
Features
Transmissive with phototransistor output Highlights Built-in ball phase output) Compact mounting type 4-direction detection Lead free RoHS directive compliant
Notice content data sheet subject change without prior notice. absence confirmation device specification sheets, SHARP takes responsibility defects that occur equipment using SHARP devices shown catalogs, data books, etc. Contact SHARP order obtain latest device specification sheets before using SHARP device.
Sheet No.: D3-A05601EN Date Oct. 2005 SHARP Corporation
GP1S036HEZ
Internal Connection Diagram
Anode Cathode Emitter Emitter Collector
Outline Dimensions
View
(Unit
show GATE Position Sharp mark 0.15 3.35 1.27
1.27
2.8±0.3 Date code
Unspecified tolerance ±0.2mm dimensions indicated refer those measured from lead base. Burr included dimensions. Burr's dimensions 0.15MAX.
Product mass approx. 0.2g Plating material SnCu TYP.
Sheet No.: D3-A05601EN
GP1S036HEZ
Date code digit)
digit Year production A.D. Mark 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 digit Month production Month Mark
repeats year cycle
Country origin
Japan, China
Sheet No.: D3-A05601EN
GP1S036HEZ
Absolute Maximum Ratings
Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Symbol Rating VCE1O VCE2O VE1CO VE2CO Ptot Topr Tstg +100 Tsol
Input
(Ta=25°C) Unit
Output Emitter-collector voltage
Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature Soldering temperature
1mmMIN. Soldering area
MAX.
Electro-optical Characteristics
Input
Output Transfer characteristics
Parameter Symbol Forward voltage Reverse current Dark current ICEO Collector current Leak current ILEAK Collector-emitter saturation voltage VCE(sat) Rise time Response time Fall time
Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA VCE=5V, IF=5mA IF=10mA, IC=55A VCE=5V, IC=100A, RL=1k
MIN.
TYP.
MAX.
(Ta=25°C) Unit
Output coupling characteristics common both phototransistors. Characteristics except leak current measured =180, Leak current output current transistor when =+90 -90°, IC=OFF.
Sheet No.: D3-A05601EN
GP1S036HEZ
Absolute Maximum Ratings
Indefinite
(IF=5mA, VCC=5V, 210° 120° 150° Indefinite Indefinite
Device state diagram
240° 300° 330° 360° Indefinite Indefinite
Output current phototransistors Output current phototransistors Device condition Refer figure Device condition Refer figure :Output current phototransistors more Output current phototransistors less Output ON/OFF under condition that device stationary state.
Gravity direction
Gravity direction (Viewing from detecting side)
Supplement
Principle Tilt Detection (Viewing from detecting side) Gravity direction
output output
(ON) (ON)
(ON) (OFF)
(OFF) (OFF)
(OFF) (ON)
(ON) (ON)
Detected Undetected
Sheet No.: D3-A05601EN
GP1S036HEZ
Fig.1 Forward Current Ambient Temperature
Fig.2 Power Dissipation Ambient Temperature
Power dissipation (mW) Ptot
Forward current (mA)
Ambient temperature (°C)
Ambient temperature (°C)
Fig.3 Forward Current Forward Voltage
Fig.4 Collector Current Forward Current
Collector current (mA) Ta=25C VCE=5V
Ta=75°C 50°C Forward current (mA)
25°C -25°C
Forward voltage
Forward current (mA)
Fig.5 Collector Current Collector-emitter Voltage
Collector current (mA) IF=10mA IF=5mA IF=20mA IF=30mA Ta=25C IF=50mA
Fig.6 Relative Collector Current Ambient Temperature
Relative collector current IF=5mA VCE=5V IC=100% Ta=25°C Ambient temperature
Sheet No.: D3-A05601EN
IF=40mA
Collector-emitter Voltage
GP1S036HEZ
Fig.7 Collector-emitter Saturation Voltage Ambient Temperature
Collector-emitter saturation voltage VCE(sat) 0.18 0.16 0.14 0.12 0.08 0.06 0.04 IF=10mA IC=60A
Fig.8 Response Time Load Resistance
VCE=5V IC=100A Ta=25C
Response time
Ambient temperature
Load resistance
Fig.9 Collector Dark Current Ambient Temperature
10-6 VCE=20V
Fig.10 Test Circuit Response Time
Input Output Output Input
Collector dark current ICEO
10-7
10-8
10-9
10-10 Ambient temperature
Remarks Please aware that data graph just reference guarantee.
Sheet No.: D3-A05601EN
GP1S036HEZ
Design Considerations Design guide
Prevention malfunction prevent photointerrupter from faulty operation caused external light, detecting face external light. Please confirm that there mis-operation magnetic field use, prevention mis-operation magnetic field. Please don't device change temperature that makes prevention mis-operation dew. device change temperature which makes dew, please leave device enough time constant temperature use. This product designed against irradiation incorporates non-coherent IRED.
Degradation
general, emission IRED used photointerrupter will degrade over time. case long term operation, please take general IRED degradation (50% degradation over years) into design consideration.
Parts
This product assembled using below parts.
Photodetector (qty.
Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) Sensitivity wavelength (nm) Response time
Photo emitter (qty.
Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) Frequency (MHz)
Material
Case Black polyphenylene sulfide resin (UL94 V-0) Lead frame 42Alloy Lead frame plating SnCu plating Packing case Polycarbonate Metal ball
Sheet No.: D3-A05601EN
GP1S036HEZ
Manufacturing Guidelines Soldering Method Flow Soldering:
Soldering should completed below 260°C within Please solder within time. Soldering area more away from bottom housing. Please take care external force exert lead pins. Please don't soldering with preheating, please don't soldering reflow.
Lead
Lead terminals this product copper alloy plated. Before usage, please evaluate solderability with actual conditions confirm. uniformity color lead terminals specified.
Other notice
Please test soldering method actual condition make sure soldering works fine, since impact junction between device varies depending tooling soldering conditions.
Cleaning instructions
device shall washed with washing material, there possibility remain washing material internal space this transmissive type photointerrupter.
Presence
This product shall contain following materials. they used production process this product. Regulation substances CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such PBBOs PBBs used this product all. This product shall contain following materials banned RoHS Directive (2002/95/EC). Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).
Sheet No.: D3-A05601EN
GP1S036HEZ
Package specification Sleeve package Package materials
Sleeve Polystyrene Stopper Styrene-Elastomer
Package method
MAX. pcs. products shall packaged sleeve. Both ends shall closed tabbed tabless stoppers. MAX. sleeves case.
Sheet No.: D3-A05601EN
GP1S036HEZ
Important Notices
circuit application examples this publication provided explain representative applications SHARP devices intended guarantee circuit design license intellectual property rights. SHARP takes responsibility problems related intellectual property right third party resulting from SHARP's devices. Contact SHARP order obtain latest device specification sheets before using SHARP device. SHARP reserves right make changes specifications, characteristics, data, materials, structure, other contents described herein time without notice order improve design reliability. Manufacturing locations also subject change without notice. Observe following points when using devices this publication. SHARP takes responsibility damage caused improper devices which does meet conditions absolute maximum ratings used specified relevant specification sheet meet following conditions: devices this publication designed general electronic equipment designs such Personal computers Office automation equipment Telecommunication equipment [terminal] Test measurement equipment Industrial control Audio visual equipment Consumer electronics (ii) Measures such fail-safe function redundant design should taken ensure reliability safety when SHARP devices used connection with equipment that requires higher reliability such Transportation control safety equipment (i.e., aircraft, trains, automobiles, etc.) Traffic signals leakage sensor breakers Alarm equipment Various safety devices, etc. (iii) SHARP devices shall used connection with equipment that requires extremely high level reliability safety such Space applications Telecommunication equipment [trunk lines] Nuclear power control equipment Medical other life support equipment (e.g., scuba). SHARP devices listed this publication fall within scope strategic products described Foreign Exchange Foreign Trade Japan, necessary obtain approval export such SHARP devices. This publication proprietary product SHARP copyrighted, with rights reserved. Under copyright laws, part this publication reproduced transmitted form means, electronic mechanical, purpose, whole part, without express written permission SHARP. Express written permission also required before this publication made third party. Contact consult with SHARP representative there questions about contents this publication.
[H181]
Sheet No.: D3-A05601EN

GP1S036HEZ Phototransistor Output, Transmissive Photointerrupter

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