Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Co
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19-4964; 9/09
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs
MAX16914/MAX16915 low-quiescent-current overvoltage reverse-battery protection controllers designed automotive industrial systems that must tolerate high-voltage transient fault conditions. These conditions include load dumps, voltage dips, reversed input voltages. controllers monitor input voltage supply line control external pFETs isolate load from fault condition. external pFETs turned when input supply exceeds 4.5V stay programmed overvoltage threshold. During high-voltage fault conditions, controllers regulate output voltage upper threshold voltage (MAX16915), switch high resistance (MAX16914) duration overvoltage transient prevent damage downstream circuitry. overvoltage event indicated through active-low, open-drain output, reverse-battery pFET behaves ideal diode, minimizing voltage drop when forward biased. Under reverse bias conditions, pFET turned off, preventing downstream tank capacitor from being discharged into source. Shutdown control turns completely, disconnecting input from output disconnecting TERM from external resistor-divider reduce quiescent current minimum. Both devices available 10-pin FMAXM package operate over automotive -40NC +125NC temperature range. 4.5V Input Voltage Operation Transient Voltage Protection +44V -75V Adjustable Overvoltage Limit with ResistorDivider Shut Shutdown Ideal Diode Reverse-Battery Protection Voltage Drop When Used with Properly Sized External pFETs Back-Charge Prevention Overvoltage Indicator Shutdown Input 29µA Operating Current Shutdown Current Thermal-Overload Protection -40NC +125NC Operating Temperature Range Small 10-Pin µMAX Package AEC-Q100 Qualified
Features
MAX16914/MAX16915
Ordering Information
PART MAX16914AUB/V+ MAX16915AUB/V+ TEMP RANGE -40NC +125NC -40NC +125NC PIN-PACKAGE FMAX FMAX
+Denotes lead(Pb)-free/RoHS-compliant package. denotes automotive qualified device.
Typical Operating Circuit
VBATT VOUT
Applications
Automotive Industrial
Configuration
VIEW
GATE1 SENSE SHDN GATE2 SENSE TERM
SHDN GATE1 SENSE
MAX16914 MAX16915
GATE2
SENSE TERM
MAX16914 MAX16915
µMAX registered trademark Maxim Integrated Products, Inc.
Maxim Integrated Products
pricing, delivery, ordering information, please contact Maxim Direct 1-888-629-4642, visit Maxim's website www.maxim-ic.com.
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs MAX16914/MAX16915
ABSOLUTE MAXIMUM RATINGS
VCC, SENSE OUT, TERM, SHDN, 400ms .-0.3V +44V VCC, SENSE OUT, TERM, SHDN, 90s.-0.3V +28V VCC, SENSE OUT, TERM, SHDN, .-0.3V +20V SENSE .-75V +44V SENSE .-18V +44V SENSE .-0.3V +20V GATE1, GATE2 .-16V +0.3V GATE1, GATE2 -0.3V (VCC 0.3V) .-0.3V Continuous Power Dissipation +70NC) 10-Pin FMAX (derate 8.8mW/NC above +70NC) (Note .707mW Operating Temperature Range -40NC +125NC Junction Temperature .+150NC Storage Temperature Range. -65NC +150NC Lead Temperature (soldering, 10s) .+300NC
Note Package thermal resistances were obtained using method described JEDEC specification JESD51-7, using fourlayer board. detailed information package thermal considerations, refer
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER Operating Voltage Range Shutdown Supply Current (ISENSE ISENSE ISHDN IVCC) SYMBOL
(VCC 14V, CGATE1 32nF, CGATE2 32nF, SHDN high, -40NC +125NC, unless otherwise noted. Typical values +25NC.) (Note
CONDITIONS (Note +25NC ISHDN SHDN low, VSENSE VTERM +85NC (Note +125NC (Note +25NC Quiescent Supply Current (ISENSE ISENSE ISHDN IVCC) Undervoltage Lockout Undervoltage-Lockout Hysteresis Threshold Voltage Threshold Voltage Hysteresis Input Current SHDN Threshold SHDN High Threshold SHDN Pulldown Current GATE Output Voltage GATE Clamp Voltage VSETTH VSETHY ISET VSHDNL VSHDNH ISHDN VGVCC1 VGVCC2 VSHDN 14V, internally pulled 6.25 VSET VSET rising SHDN high +85NC (Note +125NC (Note VUVLO rising, VSET SHDN high 4.06 +1.20 0.02 4.35 UNITS
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs
ELECTRICAL CHARACTERISTICS (continued)
PARAMETER TERM On-Resistance TERM Output Current Back-Charge Voltage Fault Threshold Back-Charge Voltage Threshold Hysteresis Back-Charge Turn-Off Time (GATE1) Back-Charge Recovery Time (GATE1) GATE2 Turn-Off Time GATE2 Turn-On Time Startup Response Time (VSHDN Rising) Startup Response Time (VCC Rising) Reverse-Battery Voltage Turn-Off Time/UVLO Turn-Off Time Thermal-Shutdown Temperature Thermal-Shutdown Hysteresis Output Voltage Open-Drain Leakage Current SENSE Input Current SENSE Input Current Output Propagation Delay VOVBL IOVB ISENSE ISENSE tOVBPD ISINK 600FA VSET 1.0V VSHDN 0/14V VSHDN 0/14V 9.5V, VSET rising from 1.5V falling tSTART1 tSTART2 tREVERSE SYMBOL RTERM ITERM VBCTH VBCHY
MAX16914/MAX16915
(VCC 14V, CGATE1 32nF, CGATE2 32nF, SHDN high, -40NC +125NC, unless otherwise noted. Typical values +25NC.) (Note
CONDITIONS SHDN high SHDN low, VTERM VSENSE (Note VSENSE 9.5V, VSENSE VSENSE stepped from 4.9V 9.5V (Note 9.5V, VSENSE VSENSE stepped from 9.5V 4.9V (Note 9.5V, VSET rising from 1.5V (Note 9.5V, VSET falling from 1.5V (Note 9.5V, from VSHDN rising VGATE_ falling (Note rising from 4.5V, SHDN high (Note VSENSE falling from 4.25V 3.25V, VSENSE 4.25V (Note UNITS
tBCREC
0.150 +170
Note parameters production tested +25NC. Limits over operating temperature range guaranteed design characterization. Note Guaranteed design characterization. Note back-charge voltage, VBC, defined voltage SENSE minus voltage SENSE Note Defined time from when exceeds VBCTH (25mV typ) when VGATE1 exceeds 3.5V. Note Defined time from when falls below VBCTH 50mV when VGATE1 falls below 3.5V. Note Defined time from when VSET exceeds VSETTH (1.20V typ) when VGATE2 exceeds 3.5V. Note Defined time from when VSET falls below VSETTH (1.14V typ) when VGATE2 falls below 3.5V. Note external pFETs turn tSTART after powered input conditions valid. Note Defined time from when exceeds undervoltage-lockout threshold (4.3V max) when VGATE1 VGATE2 fall below Note Defined time from when falls below VSENSE 25mV when VGATE1 reaches 1.75V.
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs MAX16914/MAX16915
Typical Operating Characteristics
(VCC 14V, VSHDN 14V, MAX16914/MAX16915 Evaluation Kit, +25NC, unless otherwise noted.)
SUPPLY CURRENT SUPPLY VOLTAGE
MAX16914 toc01
SUPPLY CURRENT TEMPERATURE
MAX16914 toc02
SHUTDOWN SUPPLY CURRENT SUPPLY VOLTAGE
MAX16914 toc03
MAX16914 MAX16915
SUPPLY CURRENT (FA) MAX16915 TERM OPEN SHDN HIGH LOAD TEMPERATURE (NC) MAX16914
SUPPLY CURRENT (FA) MAX16915 SHDN 12.0 14.5 SUPPLY VOLTAGE MAX16914
SUPPLY CURRENT (µA)
TERM OPEN SHDN HIGH LOAD 12.0 14.5 17.0 19.0
17.0 19.0
SUPPLY VOLTAGE
UVLO THRESHOLD TEMPERATURE
MAX16914 toc04
THRESHOLD TEMPERATURE
MAX16914 toc05
POWER-UP RESPONSE
MAX16914 toc06
UVLO TRESHOLD TEMPERATURE (NC) FALLING RISING
1.25 RISING THRESHOLD 1.20
10V/div
VOUT
10V/div
1.15
VGATE1
10V/div
FALLING 1.10 TEMPERATURE (NC) 40µs/div 22µF INPUT OUTPUT CAPACITOR, ROUT 100I, SHDN HIGH
VGATE2
10V/div
STARTUP FROM SHUTDOWN RESPONSE
MAX16914 toc07
OVERVOLTAGE LIMITER RESPONSE (MAX16915)
MAX16914 toc08
OVERVOLTAGE SWITCH-OFF RESPONSE (MAX16914)
MAX16914 toc09
VSHDN
2V/div
20V/div
10V/div
VOUT
10V/div
VOUT
20V/div
VOUT
10V/div
VGATE1
10V/div
20V/div
20V/div
VGATE2
10V/div
VGATE2
20V/div
VGATE2
20V/div
20µs/div 100µF INPUT CAPACITOR, 122µF OUTPUT CAPACITOR, ROUT 100I
400µs/div TRIP THRESHOLD 100µF INPUT CAPACITOR, 22µF OUTPUT CAPACITOR, ROUT 100I 10nF
1.0µs/div TRIP THRESHOLD 100µF INPUT CAPACITOR, 22µF OUTPUT CAPACITOR, ROUT 100I
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs
Typical Operating Characteristics (continued)
(VCC 14V, VSHDN 14V, MAX16914/MAX16915 Evaluation Kit, +25NC, unless otherwise noted.)
MAX16914/MAX16915
BACK-CHARGE RESPONSE
MAX16914 toc10
VGATE_ INPUT VOLTAGE
MAX16914 toc11
GATE-DRIVE VOLTAGE TEMPERATURE
MAX16914 toc12
15.0 13.5 GATE DRIVE VOLTAGE 12.0 10.5 SHDN HIGH GATE2 GATE1
GATE-DRIVE VOLTAGE
5V/div
GATE1
VOUT
5V/div
GATE2 SHDN HIGH TEMPERATURE (NC)
VGATE1
5V/div
1.0µs/div 2.2µF INPUT CAPACITOR, 400I INPUT RESISTOR, 22µF OUTPUT CAPACITOR
13.5 18.0 22.5 27.0 31.5 36.0 40.5 44.0 SUPPLY VOLTAGE
Description
NAME GATE1 SENSE FUNCTION Positive Supply Input Voltage. Bypass with 0.1FF greater ceramic capacitor. Gate-Driver Output. Connect GATE1 gate external p-channel pass switch provide drain-to-source voltage drop, reverse voltage protection, back-charge prevention. Differential Voltage Sense Input (Input Side IC). Used with SENSE provide back-charge prevention when SENSE voltage falls below SENSE voltage 25mV. Active-Low Shutdown/Wake Input. Drive SHDN high turn voltage detectors. GATE2 shorted when SHDN low. SHDN internally pulled through 0.5FA current sink. Connect SHDN always-on operation. Open-Drain Overvoltage Indicator Output. Connect pullup resistor from positive supply such VCC. pulled when voltage exceeds internal threshold. Ground Controller Overvoltage Threshold Programming Input. Connect center external resistive divider network between TERM adjust desired overvoltage switch-off limiter threshold. Voltage-Divider Termination Output. TERM internally connected SENSE MAX16915 MAX16914. TERM high impedance when SHDN low, forcing current zero resistor-divider connected TERM. Differential Voltage Sense Input (Output Side IC). Used with SENSE provide back-charge prevention when SENSE voltage falls below SENSE voltage 25mV. Gate-Driver Output. Connect GATE2 gate external p-channel pass switch. GATE2 driven during normal operation quickly regulated shorted during overvoltage condition. GATE2 shorted when SHDN low.
SHDN
TERM
SENSE
GATE2
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs MAX16914/MAX16915
Functional Diagram
GATE1
1.20V GATE2
SENSE
SENSE MAX16914
SHDN
BANDGAP BIAS
SENSE MAX16915
TERM SWITCH TERM
MAX16914 MAX16915
Detailed Description
MAX16914/MAX16915 ultra-small, low-quiescent, high load-current, overvoltage-protection circuits automotive industrial applications. These devices monitor input output voltages control p-channel MOSFETs protect downstream loads from reverse-battery, overvoltage, high-voltage transient conditions prevent downstream tank capacitors from discharging into source (back-charging). MOSFET (P1) eliminates need external diodes, thus minimizing input voltage drop provides back-charge reverse-battery protection. second MOSFET (P2) isolates load regulates output voltage during overvoltage condition. These allow system designers size external p-channel MOSFET their load current, voltage drop, board size.
MAX16914, input voltage monitored (TERM internally shorted VCC-see Functional Diagram) making device overvoltage switch-off controller. voltage rises, programmed overvoltage threshold tripped, internal fast comparator turns external p-channel MOSFET (P2), pulling GATE2 disconnect power source from load. When monitored voltage goes below adjusted overvoltage threshold, MAX16914 enhances GATE2, reconnecting load power source.
Overvoltage Switch-Off Controller (MAX16914)
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs
MAX16915, TERM internally connected SENSE (see Functional Diagram) allowing operate voltage-limiter mode.
Overvoltage Limiter Controller (MAX16915)
During normal operation, GATE2 pulled fully enhance MOSFET. external MOSFET's drain voltage monitored through resistor-divider between TERM, SET, GND. When output voltage rises above adjusted overvoltage threshold, internal comparator pulls GATE2 turning When monitored voltage goes below overvoltage threshold (-4% hysteresis), p-channel MOSFET (P2) turned again. During continuous overvoltage condition, MOSFET (P2) cycles (between overvoltage threshold hysteresis), generating sawtooth waveform with frequency dependent load capacitance load current. This process continues keep voltage output regulated within approximately window. output voltage regulated during overvoltage transients MOSFET (P2) continues conduct during overvoltage event, operating switched-linear mode. Caution must exercised when operating MAX16915 voltage-limiting mode long durations MOSFET's power-dissipation consideration (see MOSFET Selection section).
MAX16914/MAX16915 feature active-low shutdown input (SHDN). Drive SHDN switch (P2), disconnecting input from output, thus placing low-quiescent-current mode. Reversebattery protection still maintained. MAX16914/MAX16915 feature reverse-battery protection prevent damage downstream circuitry caused battery reversal negative transients. reverse-battery protection blocks flow current into downstream load allows circuit designer remove series-protection diodes. MAX16914/MAX16915 monitor input-to-output differential voltage between SENSE SENSE OUT. turns external (P1) when (VSENSE VSENSE 25mV (see Figure prevent discharging downstream tank capacitor into battery supply during input voltage drop, such cold-crank condition during superimposed sinusoidal voltage supply voltage. turns (P1) again back-charge voltage threshold hysteresis 50mV satisfied.
Shutdown
MAX16914/MAX16915
Reverse-Battery Protection
Back-Charge Switch-Off
10µs (max) VOUT VBATT 50mV
(25mV) VOUT VBATT
VBATT
IOUT
Figure Back-Charge Turn-Off Time
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs MAX16914/MAX16915
MAX16914/MAX16915 include active-low, open-drain overvoltage-indicator output (OV). MAX16914, asserts when exceeds programmed overvoltage threshold. deasserts when overvoltage condition over. MAX16915, asserts VOUT exceeds programmed overvoltage threshold. deasserts when VOUT drops (typ) below overvoltage threshold level. overvoltage condition continues, toggle with same frequency overvoltage limiter (P2). device turned very short period (less than tOVBPD), toggle. obtain logic-level output, connect 45kI pullup resistor from system voltage less than 44V. capacitor connected from helps extend time that logic level remains low.
Overvoltage Indicator Output (OV)
example: With overvoltage threshold (VOV) 20V, RTOTAL 20V/(100 ISET), where ISET (max). RTOTAL 200kI following formula calculate (VTH RTOTAL)/VOV where 1.20V rising threshold desired overvoltage threshold. Then, 12.0kI. nearest standard-value resistor lower than calculated value. lower value total resistance dissipates more power provides slightly better accuracy. determine RTOTAL Then, 188kI. nearest standard-value resistor lower than calculated value. lower value total resistance dissipates more power provides slightly better accuracy.
Applications Information
Most automotive applications multicell "12V" lead-acid battery with nominal voltage that swings between (depending load current, charging status, temperature, battery age, etc.). battery voltage distributed throughout automobile locally regulated down voltages required different system modules. Load dump occurs when alternator charging battery battery becomes disconnected. alternator voltage regulator temporarily driven control. Power from alternator flows into distributed power system elevates voltage seen each module. voltage spikes have rise times typically greater than decays within several hundred milliseconds extend more depending characteristics charging system. These transients capable destroying sensitive electronic equipment first "fault event." TERM provide accurate means overvoltage level MAX16914/MAX16915. resistive divider desired overvoltage condition (see Typical Operating Circuit). VSET rising 1.20V threshold with falling hysteresis. Begin selecting total end-to-end resistance: RTOTAL high accuracy, choose RTOTAL yield total current equivalent minimum ISET where ISET input bias current SET.
Load Dump
MOSFET Selection
Output p-Channel MOSFET (P2) Select external output MOSFET according application current level. MOSFET's on-resistance (RDS(ON)) should chosen enough have minimum voltage drop full load limit MOSFET power dissipation. Determine device power rating accommodate overvoltage fault when operating MAX16915 overvoltage-limiting mode. During normal operation either external MOSFET dissipates little power. power dissipated MOSFET during normal operation PNORM ILOAD2 RDS(ON) where PNORM power dissipated MOSFET normal operation, ILOAD output load current, RDS(ON) drain-to-source resistance MOSFET. Worst-case power dissipation output MOSFET occurs during prolonged overvoltage event when operating MAX16915 voltage-limiting mode. power dissipated across MOSFET follows: POVLO ILOAD where POVLO power dissipated MOSFET overvoltage-limiting operation, voltage across MOSFET's drain source, ILOAD load current.
Setting Overvoltage Thresholds
Ideal Diode, Reverse-Battery, Overvoltage Protection Switch/Limiter Controllers with External MOSFETs
Reverse-Polarity Protection MOSFET (P1) Most battery-powered applications must include reversevoltage protection. Many times this implemented with diode series with battery. disadvantage using diode forward-voltage drop diode, which reduces operating voltage available downstream circuits (VLOAD VBATTERY VDIODE). MAX16914/MAX16915 include high-voltage GATE1 drive circuitry allowing users replace high-voltage drop series diode with low-voltage-drop MOSFET device shown Typical Operating Circuit). forward-voltage drop reduced ILOAD RDS(ON) With suitably chosen MOSFET, voltage drop reduced millivolts. normal operating mode, internal GATE1 output circuitry enhances constant enhancement ensures operates RDS(ON) mode, gate-source junction overstressed during high battery-voltage applications transients (many MOSFET devices specify Q20V absolute maximum). drops below 10V, GATE1 limited GND, reducing VCC. normal operation, power dissipation very low: ILOAD2 RDS(ON) During reverse-battery conditions, GATE1 limited gate-source junction reverse biased. turned neither MAX16914/MAX16915 load circuitry exposed reverse-battery voltage. Care should taken place (and internal drain-to-source diode) correct orientation proper reverse-battery operation. MAX16914/MAX16915 thermal-shutdown feature turns both MOSFETs junction temperature exceeds maximum allowable thermal dissipation. When junction temperature exceeds +170NC, thermal sensor signals shutdown logic, turning both GATE1 GATE2 outputs allowing device cool. thermal sensor turns GATE1 GATE2 again after IC's junction temperature cools 20NC. continuous operation, exceed absolute maximum junction-temperature rating +150NC.
MAX16914/MAX16915
Thermal Shutdown
Chip Information
PROCESS: BiCMOS
Package Information
latest package outline information land patterns, www.maxim-ic.com/packages. PACKAGE TYPE PACKAGE CODE DOCUMENT 21-0061
FMAX
U10+2
Maxim cannot assume responsibility circuitry other than circuitry entirely embodied Maxim product. circuit patent licenses implied. Maxim reserves right change circuitry specifications without notice time.
Maxim Integrated Products, Gabriel Drive, Sunnyvale, 94086 408-737-7600
2009 Maxim Integrated Products
Maxim registered trademark Maxim Integrated Products, Inc.
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