Through Hole Package 150oC Junction Temperature Silicon High Volt

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Through Hole Package 150oC Junction Temperature Silicon High Volt

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MPSA94
Through Hole Package 150oC Junction Temperature
Silicon High Voltage Transistor 625mW
Configuration Bottom View
TO-92
Mechanical Data
Case: TO-92, Molded Plastic
Marking:
Maximum Ratings 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Operating Storage Temperature Symbol Value VCEO -400 VCBO -400 VEBO
RqJA
Unit mW/oC mW/oC
-5.0 -200 83.3
DIMENSIONS INCHES .170 .170 .550 .010 .130 .010 4.33 4.30 13.97 0.36 3.30 2.44
RqJC
TSTG -55~150
.190 .190 .590 .020 .160 .104
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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MPSA94
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) -1.0 mAdc, Collector-Base Breakdown Voltage -100 uAdc, Emitter-Base Breakdown Voltage -100uAdc, Collector Cutoff Current (VCB -300 Vdc, Emitter Cutoff Current (VEB -4.0 Vdc, V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -400 -400 -5.0 -0.1 -0.1 µAdc µAdc
CHARACTERISTICS(1)
Current Gain(1) -1.0 mAdc, Vdc) mAdc, Vdc) -100 mAdc, Vdc) Collector-Emitter Saturation Voltage(1) mAdc, -1.0 mAdc) mAdc, -5.0 mAdc) Base-Emitter Saturation Voltage mAdc, -1.0 mAdc)
VCE(sat) VBE(sat) -0.2 -0.3 -0.75
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, MHz) Pulse Test: Pulse Width Duty Cycle 2.0%. Cobo Cibo
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Through Hole Package 150oC Junction Temperature Silicon High Volt

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