Through Hole Package 150oC Junction Temperature Silicon High Volt
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MPSA44
Through Hole Package 150oC Junction Temperature
Silicon High Voltage Transistor 625mW
Configuration Bottom View
TO-92
Mechanical Data
Case: TO-92, Molded Plastic
Marking:
Maximum Ratings 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Operating Storage Temperature Symbol Value VCEO VCBO VEBO
RqJA
Unit mW/oC mW/oC
83.3
DIMENSIONS INCHES .170 .170 .550 .010 .130 .010 4.33 4.30 13.97 0.36 3.30 2.44
RqJC
TSTG -55~150
.190 .190 .590 .020 .160 .104
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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MPSA44
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, Emitter Cutoff Current (VEB Vdc, V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO µAdc µAdc
CHARACTERISTICS(1)
Current Gain(1) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) Collector-Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc) Base-Emitter Saturation Voltage mAdc, mAdc) VCE(sat) VBE(sat) 0.75
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, MHz) Pulse Test: Pulse Width Duty Cycle 2.0%. Cobo Cibo
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MPSA44
COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, CURRENT GAIN 25°C 125°C 25°C
-55°C COLLECTOR CURRENT (mA)
BASE CURRENT (µA)
Figure Current Gain
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VCE(sat) IC/IB VBE(sat) IC/IB
1000 COLLECTOR CURRENT (mA) 25°C 25°C
VBE(on)
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID DUTY CYCLE MPSA44
COLLECTOR CURRENT (mA)
VCE, COLLECTOR VOLTAGE (VOLTS)
Figure "On" Voltages
Figure Active Region Safe Operating Area
CAPACITANCE (pF) 25°C REVERSE BIAS (VOLTS)
Figure Capacitance
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