This device designed general purpose amplifiers switches requiring col
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2N3416
This device designed general purpose amplifiers switches requiring collector currents 300mA
General Purpose Amplifier
TO-92
Configuration Bottom View
Maximum Ratings*
Symbol TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Rating Total Device Dissipation Derate above 25OC Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient Rating +150 +150 83.3 Unit Unit
Thermal Characteristics
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Units
CHARACTERISTICS
Collector-Emitter Breakdown Voltage* (IC=10mAdc, -Vdc V(BR)CBO Collector-Base Breakdown Voltage -Vdc V(BR)EBO Emitter-Base Breakdown Voltage IC=0) -Vdc ICBO Collector Cutoff Current (VCB=25Vdc, =0.4Vdc) -100 nAdc (VCB=18Vdc, =100OC) uAdc IEBO Emitter Cutoff Current (VEB =5.0Vdc, IC=0) -100 nAdc These ratings limiting values above which serviceability semiconductor device impaired. Notes: These ratings based maximum junction temperature degrees These steady state limits. factory should consulted applications involving pulsed duty cycle operations. V(BR)CEO
DIMENSIONS INCHES .170 .170 .550 .010 .130 .010 4.33 4.30 13.97 0.36 3.30 2.44
.190 .190 .590 .020 .160 .104
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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2N3416
Symbol
Parameter Current Gain CE=4.5Vdc, IC=2.0mAdc) Collector-Emitter Saturation Voltage (IC=50mAdc, =3.0mAdc) Base-Emitter Saturation Voltage (IC=150mAdc, =15mAdc)
Units
CHARACTERISTICS*
VCE(sat) VBE(sat) -0.6 -Vdc
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain (IC=2.0mAdc, CE=4.5Vdc, f=1.0KHz) Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
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