AF01N60C 0.3A 600V N-Channel Power Field Effect Transistor designed hi
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Preliminary Datasheet 600V N-CHANNEL MOSFET General Description
AF01N60C 0.3A 600V N-Channel Power Field Effect Transistor designed high voltage switching applications. AF01N60C available TO-92 package.
AF01N60C Features
0.3A, 600V, RDS(on)=12 Typical Gate Charge 4.4nC Typical CRSS: 2.8pF Typical Fast Switching Junction Operating Temperature Range: -55oC 150oC
Applications
Switching Mode Power Supply (SMPS) High Voltage Power Supply High Speed Power Switching Inverter
TO-92
TO-92 Ammo packing
Figure Package Types AF01N60C
Configuration
Package (TO-92)
SOURCE DRAIN GATE
Figure Configuration AF01N60C (Top View)
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Functional Block Diagram
DRAIN
AF01N60C
GATE
SOURCE
Figure Functional Block Diagram AF01N60C
Ordering Information
AF01N60C Circuit Type Package TO-92 Lead Free Ammo Blank: Bulk
Package
Junction Operating Temperature Range
Part Number Lead Free
Marking Lead Free
Packing Type
TO-92
-55oC
AF01N60CZ-E1 AF01N60CZTR-E1
AF01N60CZ-E1 AF01N60CZ-E1
Bulk Ammo
listed part numbers used during transition lead-free products. After transition completed, lead-free products will considered "standard" will resume original part numbers.
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Absolute Maximum Ratings (Note
Parameter Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Single Pulsed Avalanche Energy (Note Avalanche Current (Note2) Repetitive Avalanche Energy (Note Peak Diode Recovery dv/dt (Note Power Dissipation TA=25oC Power Dissipation TL=25oC Power Dissipation Derating above 25oC Operating Storage Temperature Range Maximum Lead Temperature Soldering Purposes, 1/8" from case 5-seconds ,TSTG TC=25oC TC=100oC VGSS dv/dt Symbol VDSS 0.18 Value Unit
AF01N60C
V/ns W/oC
0.02
Note Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated under "Recommended Operating Conditions" implied. Exposure "Absolute Maximum Ratings" extended periods affect device reliability. Note Repetitive Rating: Pulse width limited maximum junction temperature Note L=59mH, IAS=1.1A, VDD=50V, RG=25, Starting TJ=25oC. Note 0.3A, di/dt 200A/s, BVDSS, Starting TJ=25oC.
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Lead (Note Thermal Resistance, Junction-to-Ambient (Note
Symbol
Unit
oC/W
Note Reference point drain lead. When mounted 3"x4.5" FR-4 without copper still environment. (RJA junction-to-case case-to-ambient thermal resistance. determined user's board design)
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Electrical Characteristics
(TC= 25oC, unless otherwise specified.)
Parameter On/Off Characteristics Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Body Forward Leakage Gate-to-Body Reverse Leakage Gate Threshold Voltage Static Drain-to-Source On-Resistance Dynamic Characteristics Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective (Note Output Capacitance tD(on) tD(off) CISS COSS CRSS COSS eff. VGS=0V, VDS=0V 480V VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=1.1A, RG=25 (Note VDS=40V, ID=0.3A (Note VDS=480V, ID=1.1A, VGS=10V, (Note 0.52 13.5 V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) VGS=0V, ID=250A VDS=600V, VGS=0V VDS=480V, VGS=0V, TJ=125oC VGS=30V, VDS=0V VGS=-30V, VDS=0V VDS=VGS, ID=250A VGS=10V, ID=0.15A -100 Symbol Conditions Unit
AF01N60C
Source-to-Drain Diode Characteristics Continuous Source-to-Drain Current (Body Diode) Pulsed Source-to-Drain Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS=0V, IS=0.3A VGS=0V, IS=1.1A di/dt=100A/s (Note 0.53
Note COSS eff. constant effective capacitance that gives same charging time COSS while rising from VDSS
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Typical Performance Characteristics AF01N60C
RDS(ON),() Drain-Source On-Resistance
Drain Current
TOP: Bottom:
VGS=10V VGS=20V Notes: TJ=25
250s Pulse Test TC=25
10.0 15.0 20.0 25.0 30.0
200.0m
400.0m
600.0m
800.0m
VDS, Drain-Source Voltage
Drain Current
Figure Typical Output Characteristics
Figure On-Resistance Drain Current
VGS, Gate-to-Source Voltage
Capacitance (pF)
VGS=0V, f=1MHz COSS=CGS+CGD CISS=CGS+CGD, Shorted CRSS=CGD
ID=1.1A VDS=120V VDS=300V VDS=480V
VDS, Drain Source Voltage
Total Gate Charge (nC)
Figure Typical Capacitance Drain-to-Source Voltage
Figure Typical Gate Charge vs.Gate-to-Source Voltage
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Typical Performance Characteristics (Continued) AF01N60C
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
Notes: VGS=0V ID=250A
Notes: VGS=10V ID=0.15A
-50.0 50.0 100.0
-100.0
-50.0
50.0
100.0
150.0
200.0
-100.0
150.0
200.0
Junction Temperature
Junction Temperature
Figure Normalized Breakdown Voltage Temperature
Figure Normalized On-Resistance Temperature
ISD, Reverse DrainCurrent
TJ=25 Notes: VGS=0V 250s Pulse Test
200.0m 400.0m 600.0m 800.0m
VSD, Source-to-Drain Voltage
Figure Typical Source-Drain Diode Forward Voltage
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Typical Test Circuit Waveform AF01N60C
200nF
Same Type
300nF
Charge
Figure Gate Charge Test Circuit Waveforms
tD(on)
tD(off)
tOFF
Figure Resistive Switching Test Circuit Waveforms
BVDSS
BVDSS BVDSS-VDD
ID(t) VDS(t) Time
Figure Unclamped Inductive Switching Test Circuit Waveforms
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Typical Test Circuit Waveforms (Continued)
Driver Same Type dv/dt controlled controlled pulse period
AF01N60C
(Driver)
Gate Pulse Width Gate Pulse Period
IFM, Body Diode Forward Current (DUT) di/dt Body Diode Reverse Current (DUT) Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
Figure Peak Diode Recovery dv/dt Test Circuit Waveforms
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Mechanical Dimensions AF01N60C
TO-92
Unit:
1.100(0.043) 1.400(0.055) 3.430(0.135) 0.360(0.014) 0.510(0.020)
3.300(0.130)
3.700(0.146)
0.000(0.000) 0.380(0.015) 1.600(0.063) 4.400(0.173) 4.700(0.185)
4.300(0.169)
4.700(0.185)
0.380(0.015) 0.550(0.022)
1.270(0.050)
2.440(0.096) 2.640(0.104)
Mar. 2007 Rev.
14.100(0.555) 14.500(0.571)
Semiconductor Manufacturing Limited
Preliminary Datasheet 600V N-CHANNEL MOSFET Mechanical Dimensions TO-92 Ammo Packing Unit: mm(inch) AF01N60C
12.400(0.488) 13.000(0.512)
±1.000(0.039) 4.400(0.173) 4.600(0.181)
±1.000(0.039) 3.400(0.134) 3.600(0.142) 4.400(0.173) 4.600(0.181)
19.000(0.748) 21.000(0.827) 0.380(0.015) 0.550(0.022) 1.000 (0.039) 5.500(0.217) 6.500(0.256) 6.050(0.238) 6.650(0.262) 2.200(0.087) 2.800(0.110) 2.200(0.087) 2.800(0.110) 15.500(0.610) 16.500(0.650)
2.500(0.098)
8.500(0.335) 9.500(0.374)
3.550(0.140) 4.150(0.163)
3.800(0.150) 4.200(0.165) 17.500(0.689) 19.000(0.748)
12.500(0.492) 12.900(0.508)
0.150(0.006) 0.250(0.010)
0.350(0.014) 0.450(0.018)
Mar. 2007 Rev.
Semiconductor Manufacturing Limited
Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE
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