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Small Signal General Purpose Amplifier Transistors SOT-23 Fe
Top Searches for this datasheetMMBTA05 THRU MMBTA06 Small Signal General Purpose Amplifier Transistors SOT-23 Features Epitaxial Planar Construction Complementary Types Available (MMBTA55/MMBTA56) Ideal Medium Power Amplification Switching. Configuration View Maximum Ratings Symbol VCEO MMBTA05 MMBTA06 Rating +150 +150 Unit VCBO VEBO TSTG Rating Collector-Emitter Voltage MMBTA05 MMBTA06 Collector-Base Voltage MMBTA05 MMBTA06 Emitter-Base Voltage Collector Current-Continuous Power Dissipation* Thermal Resistance, Junction Ambient Operating Junction Temperature Storage Temperature Electrical Characteristics Symbol Parameter Unless Otherwise Specified DIMENSIONS INCHES .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 2.80 2.10 1.20 1.78 .013 .085 Units CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=1.0mAdc, IB=0) MMBTA05 MMBTA06 Emitter-Base Breakdown Voltage (IE=100µAdc, IC=0) Collector Cutoff Current (VCB=60Vdc, IE=0) MMBTA05 (VCB=80Vdc, IE=0) MMBTA06 Emitter Cutoff Current (VCe=60Vdc, Ibo=0) MMBTA05 (VCe=80Vdc, Ibo=0) MMBTA06 -0.1 V(BR)EBO ICBO µAdc µAdc µAdc µAdc .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 3.04 2.64 1.40 1.03 2.05 .100 1.12 .180 NOTE ICES Suggested Solder Layout .031 .800 .035 .900 .079 2.000 inches CHARACTERISTICS Current Gain (VCE=1.0Vdc, IC=10mAdc) (VCE=1.0Vdc, IC=100mAdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB=10mAdc) Base-Emitter Voltage (IC=100mAdc, VCE=1.0Vdc) Current-Gain-Bandwidth Product (IC=10mAdc, VCE=2.0Vdc, f=100MHz) -100 -0.25 -Vdc .037 .950 VCE(sat) VBE(sat) Valid provided that terminals kept ambient temperature. Pulse Test: Pulse Width<300us, Duty Cycle<2.0 .037 .950 www.cnelectr.com Other recent searchesS29AL016M - S29AL016M S29AL016M Datasheet PTH08T240W - PTH08T240W PTH08T240W Datasheet PTH08T241W - PTH08T241W PTH08T241W Datasheet LC374TWR-35P-A - LC374TWR-35P-A LC374TWR-35P-A Datasheet DAC5672-EP - DAC5672-EP DAC5672-EP Datasheet
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