Collector Current: ICM=0.6A Collector-Base Voltage: V(BR)CBO=180V Oper
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MMBT5551
Collector Current: ICM=0.6A Collector-Base Voltage: V(BR)CBO=180V Operating Storage Temperatures -55OC 150OC Capable 0.3Watts Power Dissipation Device Marking: MMBT5551=G1
Plastic Encapsulate Transistor
SOT-23
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector -Emitter Breakdown Voltage (IC=1.0mAdc, Collector-Base Breakdown Voltage (IC=100uAdc, Emitter-Base Breakdown Voltage =10uAdc, C=0) Collector Cutoff Current (VCB=120Vdc, Emitter Cutoff Current (VEB =4.0Vdc, IC=0) Current Gain CE=5.0Vdc, IC=1.0mAdc) Current Gain CE=5.0Vdc, IC=10mAdc) Current Gain CE=5.0Vdc, IC=50mAdc) Collector-Emitter Saturation Voltage (IC=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (IC=50mAdc,IB=5.0mAdc) Current Gain-Bandwidth Product (IC=10mAdc, CE=5.0Vdc, f=30MHz) -Max -0.1 Units
CHARACTERISTICS
(BR)CEO (BR)CBO (BR)EBO ICBO IEBO
uAdc
uAdc
INCHES .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015
DIMENSIONS 2.80 2.10 1.20 1.78 .013 .085
CHARACTERISTICS
hFE-1 hFE-2 hFE-3 CE(sat) BE(sat) -200
.120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
3.04 2.64 1.40 1.03 2.05 .100 1.12 .180
NOTE
Suggested Solder Layout
.031 .800
SMALL-SIGNAL CHARACTERISTICS
-MHz
.035 .900
.079 2.000
inches
.037 .950 .037 .950
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