Collector-Emitter voltage: BVCEO=50V Collector current 150mA High line

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Collector-Emitter voltage: BVCEO=50V Collector current 150mA High line

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MMBT1815
Collector-Emitter voltage: BVCEO=50V Collector current 150mA High linearity Complimentary MMBT1015
EPITAXIAL
SILICON TRANSISTOR
MARKING
SOT-23
Maximum Ratings
Junction Temperature: 125°C Storage Temperature: -55°C +150°C
ABSOLUTE MAXIMUM RATINGS 25°C Unless Otherwise Specified
DIMENSIONS INCHES .106 .093 .067 .047 .014 .041 -.003 .122 .108 .083 .059 .022 .053 .004 .008 2.70 2.35 1.70 1.20 0.35 1.05 -.08 3.10 2.75 2.10 1.50 0.55 1.35 NOTE
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MMBT1815
ELECTRICAL CHARACTERISTICS 25°C Unless Otherwise Specified
Parameter
Collector cut-off current Emitter cut-off current current gain(note) Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance Noise Figure
Symbol
ICBO IEBO hFE1 VCE(sat) VBE(sat)
Test conditions
VCB=60V,IE=0 VEB=5V,Ic=0 VCE=6V,Ic=2mA
UNIT
Ic=100mA,IB=10mA Ic=100mA,IB=10mA VCE=10V,Ic=1.0mA,f=30Hz.80 VCB=10V,IE=0,f=1MHz Ic=-0.1mA,VCE=6V RG=10k,f=100Hz
0.25
.MHz
CLASSIFICATION hFE1
RANK RANGE 130-200 200-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Fig.2 current Gain
Fig.3 Base-Emitter Voltage
Ic,Collector current (mA)
HFE, current Gain
Ic,Collector current (mA)
VCE=6V
IB=300
VCE=6V
IB=250
IB=200
IB=150
IB=100
IB=50
Collector-Emitter voltage
Ic,Collector current (mA)
Base-Emitter voltage
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth product
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
Saturation voltage (mV)
Ic=10*IB
Current Gain-bandwidth product,fT(MHz)
VCE=6V
VBE(sat)
f=1MHz IE=0
VCE(sat)
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage
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Collector-Emitter voltage: BVCEO=50V Collector current 150mA High line

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