High Current-Gain Bandwidth Products Noise Figure f=1.0GHz NF(matched)
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MMBR901
High Current-Gain Bandwidth Products Noise Figure f=1.0GHz NF(matched)=1.9dB (Typ) High Power Gain Gpe(matched)=12.0dB (Typ) f=1.0GHz Operating Storage Temperature: -55°C +150°C Marking Code:
Silicon High-Frequency Transistor
Unit mAdc
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Thermal Resistance, Junction Case Power Dissipation TC=75 Derate above 75oC
Symbol
RqJC
Value 0.300
PD(max)
Watt mW/oC
Electrical Characteristics 25oC Unless Otherwise Noted
Characteristics Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage 1.0mAdc, Collector-Base Breakdow Voltage 0.1mAdc, Emitter-Base Breakdown Voltage 0.1mAdc, Collector Cutoff Current Vdc, (BR)CEO (BR)CBO (BR)EBO ICBO NAdc
DIMENSIONS INCHES .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 2.80 2.10 1.20 1.78 .013 .085
CHARACTERISTICS
Current Gain mAdc, Vdc)
.120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
3.04 2.64 1.40 1.03 2.05 .100 1.12 .180
NOTE
Suggested Solder Layout
.031 .800 .035 .900 .079 2.000 inches
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance =10Vdc, mAdc, GHz) Common-Emitter Amplifier Gain =6.0Vdc, mAdc, GHz) Cobo
Note: Case temperature measured collector lead immediately adjacent body package
.037 .950 .037 .950
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