MBD128 BAW101S High voltage double diode Product data sheet

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MBD128 BAW101S High voltage double diode Product data sheet

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MBD128
BAW101S High voltage double diode
Product data sheet 2003
Semiconductors
Product data sheet
High voltage double diode
FEATURES Small plastic package High switching speed: max. High continuous reverse voltage: Electrically insulated diodes. APPLICATIONS High voltage switching Automotive Communication. DESCRIPTION BAW101S high-speed switching diode array with separate dice, fabricated planar technology encapsulated small SOT363 plastic package. MARKING TYPE NUMBER BAW101S Note Made Hong Kong. Made Malaysia. Made China. Fig.1 MARKING CODE(1)
view
BAW101S
PINNING anode n.c. cathode anode n.c. cathode DESCRIPTION
MBL892
Simplified outline (SOT363) symbol.
2003
Semiconductors
Product data sheet
High voltage double diode
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL diode VRRM IFRM IFSM Ptot Tstg Tamb Note Device mounted printed-circuit board, cathode-lead mounting cm2. ELECTRICAL CHARACTERISTICS unless otherwise specified. SYMBOL diode VBR(R) Note Pulse test: pulse width 0.02. reverse breakdown voltage forward voltage reverse current reverse recovery time diode capacitance note Tamb PARAMETER CONDITIONS MIN. continuous reverse voltage series connection repetitive peak reverse voltage series connection continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature square wave; prior surge; Tamb note single diode loaded; note Fig.2 double diode loaded; note Fig.2 PARAMETER CONDITIONS MIN.
BAW101S
MAX.
UNIT
+150 +150
MAX.
UNIT
when switched from measured
2003
Semiconductors
Product data sheet
High voltage double diode
THERMAL CHARACTERISTICS SYMBOL Notes more diodes loaded. Device mounted printed-circuit board, cathode-lead mounting cm2. GRAPHICAL DATA
MLE057
BAW101S
PARAMETER thermal resistance from junction soldering point thermal resistance from junction ambient
CONDITIONS note note
VALUE
UNIT
MBG384
(mA)
(mA)
Tamb (°C)
Double diode loaded.
Single diode loaded.
Device mounted printed-circuit board. Cathode-lead mounting cm2.
typical values. typical values. maximum values.
Fig.2
Maximum permissible continuous forward current function ambient temperature.
Fig.3
Forward current function forward voltage.
2003
Semiconductors
Product data sheet
High voltage double diode
BAW101S
handbook, full pagewidth IFSM
MBG703
10-1
Based square wave currents. prior surge.
(µs)
Fig.4 Maximum permissible non-repetitive peak forward current function pulse duration.
handbook, halfpage (µA)
MLE058
MLE059
(pF)
10-1
10-2
(°C)
VRMAX: maximum values. VRMAX: typical values.
MHz;
Fig.5
Reverse current function junction temperature.
Fig.6
Diode capacitance function reverse voltage; typical values.
2003
Semiconductors
Product data sheet
High voltage double diode
BAW101S
MLE060
Tamb (°C)
Fig.7
Maximum permissible continuous reverse voltage function ambient temperature.
2003
Semiconductors
Product data sheet
High voltage double diode
PACKAGE OUTLINE
BAW101S
Plastic surface mounted package; leads
SOT363
index
detail
scale
DIMENSIONS original dimensions) UNIT 0.30 0.20 0.25 0.10 1.35 1.15 0.65 0.45 0.15 0.25 0.15
OUTLINE VERSION SOT363
REFERENCES JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2003
Semiconductors
Product data sheet
High voltage double diode
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes Please consult most recently issued document before initiating completing design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
BAW101S
This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com. DISCLAIMERS General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights. Export control This document well item(s) described herein subject export control regulations. Export might require prior authorization from national authorities. Quick reference data Quick reference data extract product data given Limiting values Characteristics sections this document, such complete, exhaustive legally binding.
2003
Semiconductors
Customer notification This data sheet changed reflect company name Semiconductors. changes were made content, except legal definitions disclaimers.
Contact information additional information please visit: http://www.nxp.com sales offices addresses send e-mail salesaddresses@nxp.com
B.V. 2009 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands 613514/01/pp9 Date release: 2003 Document order number: 9397 11148

MBD128 BAW101S High voltage double diode Product data sheet

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