date release: 2005 document order number: 9397 15125 Contents
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Appendix Manual edition
date release: 2005 document order number: 9397 15125
Contents
Application-Basics Frequency spectrum Function antenna Transistor Semiconductor Process 1.3.1 General-Purpose Small-Signal bipolar 1.3.2 Double Polysilicon Design-Basics Fundamentals 2.1.1 waves 2.1.2 reflection coefficient 2.1.3 Differences between ideal practical passive devices 2.1.4 Smith Chart Small Signal amplifier parameters 2.2.1 Transistor parameters microwave 2.2.2 Definition s-parameters 2.2.2.1 2-Port network definition 2.2.2.2 3-Port network definition Amplifier design Fundamentals 2.3.1 bias point adjustment MMICs 2.3.2 bias point adjustment Transistors 2.3.3 Gain Definition 2.3.4 Amplifier stability Introduction into noise Definition equivalent noise source noise temperature Determine equivalent noise sources Noisy two-port device: noise figure Noise Figure terminated amplifiers semiconductor noise Noise Figure versus noise temperature Noise Figure versus noise temperature Noise temperature lossy device (attenuator, cable etc.) Noise temperature resistor Cascading noisy blocks 3.10 Example: main satellite receiver system design 3.11 Antenna noise 3.12 Example: radar system 3.13 Input output related noise temperature 3.14 Amplifier sourced noisy generator 3.15 Noise Figure, noise temperature sensitivity receiver 3.16 Noise sources semiconductor devices 3.17 Frequency range noise contributions 3.18 Sideband noise oscillators mixers 3.19 Equivalent input related noise source
Performance cascaded Blocks Receiver dynamic range Cascaded gain Cascaded noise Cascaded intermodulation Cascaded compression Transmission distance Example: transmission distance limited frequency receiver quality Filters receiver rail Relationships conversion distortion parameters
Introduction Front-End
Application-Basics
Frequency spectrum
Radio spectrum wavelengths
Each material's composition creates unique pattern radiation emitted.This classified "frequency" "wavelength" emitted radiation. electro-magnetic (EM) signals travel with speed light, they have character propagation waves.
Gamma radiation
750nm 400nm
380nm 100nm
104eV
106eV
1015eV
100MHz
100GHz
100kHz
10MHz
10GHz
10kHz
1MHz
1GHz
Ionized radiation
750nm Colour scale visible light human
400nm
survey frequency bands related wavelengths:
Band Frequency 3kHz 30kHz 30kHz 300kHz 300kHz 1650kHz 1605KHz 4000KHz 3MHz 30MHz 30MHz 300MHz 300MHz 3GHz 3GHz 30GHz 30GHz 300GHz 300GHz 3THz Definition Very Frequency Frequency Medium Frequency Boundary Wave High Frequency Very High Frequency Ultra High Frequency Super High Frequency Extremely High Frequency Wavelength acc. DIN40015 100km 10km 10km 100m 100m 10cm 10cm 1mm-100µm CCIR Band
Cosmic radiation
Visible light
Ultra violet
Infrared
X-ray
Philips Manual Edition Appendix
Literature researches according Microwave's sub-bands showed different definitions with very none description area validity. following table will give overview can't reference.
Source Validity IEEE Radar Standard Military Band www.werweiss www.atcnea.de Siemens Siemens ARRL Wikipedia -was.de Online Lexicon Online Lexicon Book 3126 Satellite Primary Frequency Microwave Dividing Uplink Radar bands bands Radar Area techniques 0,225 3,95 3,95
Band
5,85 18,0 26,5
26,5 26,5 12,6
10,9 15,3 17,2 0,39 1,55
26.5 26.5 12.4
5,85 26,5 26,5 12,4
12,4 18,0 26,5 40,0 3,95 40,0 60,0
0,225 0,39 1,55
12.4
0,22 3,95 12,4
12,4
12,5
10,9
Function antenna
standard application output signal transmitter power amplifier transported coaxial cable suitable location where antenna installed. Typically coaxial cable impedance TV/Radio). ether, that room between antenna infinite space, also impedance value. This ether transport medium traveling wireless waves from transmitter antenna receiver antenna. optimum power transfer from coaxial cable (e.g. into ether (theoretical Z=120 =377), need "power matching" unit. This matching unit antenna. does match cable's impedance space's impedance. Depending frequency specific application needs there antenna configurations construction variations available.The simplest isotropic ball radiator, which theoretical model used mathematical reference. next simplest configuration practical antenna wide dipole, also called dipole radiator. consists axial arranged sticks (Radiator). Removal Radiator results "vertical monopole" antenna, illustrated adjacent picture. vertical monopole "donut-shaped" field centered radiating element.
Philips Manual Edition Appendix
Higher levels circuitry integration cost reductions also influence antenna design. Based field radiation strip-lines made printed circuit boards (PCBs), antenna structures were developed called `patch-antennas' (see diagram). ceramic instead epoxy dielectric shrinks mechanical dimensions.
Patch
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LF-MF-HF application range, ferrite-rod antennas were commonly used.They compress magnetic fields into ferrite core, which acts like amplifier magnetic fields. Coils pick signals like transformer.They part pre-selection tank image rejection channel selection.The tuner shown part Nordmende Elektra vacuum-tube radio least years still working).To illustrate dimensions, Monolithic Microwave placed front solder point.
ECC85 BGA2003
Tuning capacitor
BGA2003
Ferrite Antenna
Logarithmic periodic antenna 406-512
broadband discone antenna
Philips Manual Edition Appendix
Arecibo observatory, Puerto Rico, radio telescope with dish antenna diameter deep.The secondary reflector receiver located 900-ton platform, suspended above dish.This feed point L-band microwave antenna antennas used SETI@home project.The receiver cooled down using liquid Helium low-noise operation, receive weak, distant signals transmitted (potentially) extraterrestrial intelligence. observatory respond incoming signals using transmitter with balanced klystron amplifier (2.5 output peak power; power supply).
Feed
Dish
Arecibo observatory, Puerto Rico
Transistor semiconductor process
1.3.1 General-purpose small-signal bipolar
transistor built from three different layers: Highly-doped emitter layer Medium-doped base area Low-doped collector area. highly doped substrate serves carrier conductor only. During assembly process, transistor attached lead-frame gluing eutectic soldering.The emitter base contacts connected lead-frame (leads) through bond wires (e.g. gold, aluminum, using, example, ultrasonic welding process.
Substrate: Emitter Collector
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Base
Epitaxial-Layer:
Transistor cross section
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bra439
BC337, BC817
SOT23 standard lead-frame
Philips Manual Edition Appendix
1.3.2 Double polysilicon
mobile communications market ever-higher frequencies mean there demand low-voltage/high-performance wideband transistors, amplifier modules MMICs.To meet that demand, Philips developed double-polysilicon process achieve excellent performance.The `double-poly' diffusion process uses advanced transistor technology that vastly superior existing bipolar technologies.
base emitter base
oxide epilayer substrate
Advantages double-poly-Si process:
Higher frequencies (>23GHz) Higher power gain Gmax, e.g., 22dB/2GHz Lower noise operation Higher reverse isolation Simpler matching Lower current consumption Optimized supply voltages High efficiency High linearity Better heat dissipation Higher integration MMICs (SSI= Small-Scale-Integration)
collector
bra440
Existing advanced bipolar transistor
base
emitter poly poly
base
collector
oxide buried layer substrate SIC: selectively implanted collector
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Applications
Cellular cordless markets, low-noise amplifiers, mixers power amplifier circuits operating higher), high-performance front-ends, pagers satellite tuners.
Typical products manufactured double-poly-Si:
MMIC Family: generation wideband transistors: power amplifier modules: BGA20xy, BGA27xy BFG403W/410W/ 425W/480W BGY240S/241/212/280
With double-poly, polysilicon layer used diffuse connect emitter while another polysilicon layer used contact base region. buried layer, collector brought die. with standard transistors, collector contacted back substrate attached lead-frame.
Philips Manual Edition Appendix
design basics
fundamentals
2.1.1 waves
electromagnetic (EM) signals travel outward like waves pond that stone dropped into it.The waves governed laws that particularly apply optical signals. homogeneous vacuum, without external influences, waves travel speed Co=299792458 m/s. Waves traveling substrates, wires, within non-air dielectric material into traveling path slow down their speed proportional root dielectric constant:
reff
reff substrate's dielectric constant.
With calculate wavelength,
Example1:
Calculate speed electromagnetic wave Printed Circuit Board (PCB) manufactured using epoxy material metal-dielectric-semiconductor capacitor integrated circuit. metal-dielectric-semiconductor capacitor, dielectric material Silicon-Dioxide (SiO2) Silicon-Nitride (Si3N4).
Calculation:
reff
299792458m 139.78
reff reff reff
SiO2 Si3N4
Example2:
What wavelength transmitted from commercial radio broadcasting program (SWR3 meter band) 6030 air, within PCB?
Calculation:
reff close vacuum.
reff
Wavelength air:
299792458m/s 49.72m 6030
From Example take dielectric constant reff 4.6, then calculate wavelength 23.18 meters
Philips Manual Edition Appendix
forward-traveling wave transmitted injected) source into traveling medium (whether ether, substrate, dielectric, wire, microstrip, waveguide other medium) travels load opposite medium. junctions between different dielectric materials, part forwardtraveling wave reflected back towards source.The remaining part continues traveling towards load.
Backwards traveling wave
Forwards traveling wave Junction LOSSY Source Junction LOSSY Load Junction LOSSY Junction
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Fig.6: Multiple reflections between lines with different impedances Z1-Z3
Fig.6, reflections forward-traveling main wave (red) caused between materials with different impedance values (Z1, Z3). shown, backward-reflected wave (green) again reflected into forward-traveling wave direction towards load (shown violet Fig.6). case optimum matching between different dielectric mediums, signal reflection will occur maximum power forwarded.The amount reflection caused junctions lines with different impedances, line discontinuities, determined reflection coefficient.This explained next chapter.
Wavelength
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[µm]
[mm]
Example: Select your frequency (ISM433) crossing trace (blue) read wavelength (70cm)
Philips Manual Edition Appendix
2.1.2 reflection coefficient
discussed previously, forward-traveling wave partially reflected back junctions with line impedance discontinuities, mismatches. Only portion forward traveling wave (arriving load) will absorbed processed load. Because frequency-dependent speed propagating waves dielectric medium, there will delay arrival wave load point over what wave traveling free space would have (phase shift). Mathematically this behavior modeled with vector complex Gaussian space. each location travel medium wire), wave-fronts with different amplitude phase delay heterodyned.The resulting energy envelope waves along wire appears ripple with maximum minimum values.The phase difference between maximums same value phase difference between minimums.This distance termed half-wavelength, (also termed normalized phase shift 180°). Example: line with mismatched ends driven from source will have standing waves.These will result minimum maximum signal amplitudes defined locations along line. Determine approximate distance between worst-case voltage points Bluetooth signal processed printed circuit based substrate. Assumed speed FR4:
Calculation:
Wavelength:
minimum have minimum voltage, maximum current. maximum have maximum voltage, minimum current. distance between minimum maximum voltage current) point equal reflection coefficient defined ratio between backward-traveling voltage wave forward-traveling voltage wave:
Reflection coefficient:
Reflection loss return loss:
index `(x)' indicates different reflection coefficients along line.This caused distribution standing wave along line. return loss indicates much wave reflected, compared forward-traveling wave. Often input reflection performance device specified Voltage Standing Wave Ratio (VSWR just SWR).
VSWR:
Matching factor:
Some typical values VSWR: 100% mismatch caused open shorted line: VSWR Optimum (theoretical) matched line: VSWR practical situations varies between VSWR
Philips Manual Edition Appendix
Calculating reflection factor:
Using some mathematical manipulation:
results
Reflection coefficients certain impedances (e.g. load) leads with nominal system impedance (50, 75). explained, standing waves cause different amplitudes voltage current along wire. ratio these parameters impedance each location, (x). This means line with length (L),
mismatched load wire-end location (x=L), will show wire-length dependent impedance source location (x=0):
Example:
There several special cases (tricks) that used microwave designs. Mathematically shown that wire with length wavelength transformer: impedance will quarter
impedance transformer:
This used SPDT (single pole, double throw) based diode switches bias circuits because short (like large capacitor) transformed into infinite impedance with resistive path (under ideal conditions). indicated Fig.6, shown traveling-wave basic rules, matching, reflection individual wire performances affect bench measurement results caused impedance transformation along wire. this constraint, each measurement set-up must calibrated precision references. Examples calibration references are: Open Through Short Sliding Load -Match set-up calibration tools undo unintended wire transformations, discontinuities from connectors, similar measurement intrusion issues.This prevents Device Under Test (DUT) measurement parameters from being affected mechanical bench set-up configurations.
Philips Manual Edition Appendix
Example:
Calculation:
Determine input VSWR BGA2711 MMIC wideband amplifier 2GHz, based data sheet characteristics. What kind resistive impedance(s) theoretically cause this VSWR? What input return loss measured coaxial cable distance BGA2711 GHz: 10dB
Comparison:
know only magnitude it's angle. definition, VSWR must larger than then possible solutions: Zmax=1.92*50=96.25; Zmin=50/1.92=25.97
then examine
transformer transforms device impedance ZIN1=96.25 Results: ZIN2=25.97 96.25
2GHz, BGA2711 offers input return loss 10dB VSWR=1.92. This reflection caused 96.25 25.97 impedance. course there infinite results possible takes into account combinations values. Measuring this impedance 2GHz with non-50 cable will cause extremely large errors distance, because Zin1 96.25 appears 25.97 second solution Zin2=25.97 appears 96.25!
illustrated above example, VSWR return loss) quickly indicates quality device's input matching without calculations, does tell about real (vector) performance (missing phase information). Detailed mathematical network analysis amplifiers depends device's input impedance versus output load (S12 issue).The output device impedance dependent impedance source driving amplifier (S21 issue). this interdependence, s-parameters linear small signal networks offers reliable accurate results.This s-parameter theory will presented next chapters.
Philips Manual Edition Appendix
VSWR
Reflection Coefficient Zmin, Zmax [Ohm]
Return Loss [dB]
Example: Select your interesting return-loss (10dB). Crossing dark green trace find VSWR (1,9) crossing dark blue trace find reflection coefficient (r0,32).There (100% resistive) mismatches found either crossing dashed light green traces (Zmax96) crossing dashed light blue trace (Zmin26). further details, please refer former algebraic application example.
Philips Manual Edition Appendix
2.1.3 Differences between ideal practical passive devices
Practical devices have so-called parasitic elements very high frequencies. Resistor Inductor Capacitor inductive parasitic action acts like low-pass filtering function. capacitive resistive parasitic, causing like damped parallel resonant tank circuit with certain self resonance. inductive resistive parasitic, causing like damped tank circuit with Series Resonance Frequency (SRF).
inductor's capacitor's parasitic reactance causes self-resonances.
resistor model
capacitor model
inductor model
Fig.7 Equivalent models passive lumped elements
passive component above possible, must critically evaluated. capacitor above appears inductor with blocking capabilities.
Philips Manual Edition Appendix
2.1.4 Smith chart
indicated example previous chapter, impedances semiconductors combination resistive reactive parts caused phase delays parasitics. impedances best analyzed frequency domain under vector algebraic expressions:
Object
into
Frequency domain
Resistor
Inductor
Capacitor
Frequency
Complex designator
Some useful basic vector algebra analysis: Complex impedance:
(cos
with;
angle
Polar notation Cartesian (Rectangular) notation
same rules used other issues, e.g., complex reflection coefficient:
Philips Manual Edition Appendix
Special cases:
Resistive mismatch: Inductive mismatch: Capacitive mismatch: reflection coefficient: reflection coefficient: reflection coefficient:
Gaussian number area (Polar Diagram) allows charting rectangular two-dimensional vectors:
Dots Dots Dots Dots
Re-Line 100% resistive Im-Line 100% reactive some their above Re-Line inductive resistive some their below Re-Line capacity resistive
resistive-axis
Resistive-Axis
reactive-axis
Resistive-Axis
applications, designers remain close resistive impedance.The polar diagram's origin circuits, relatively large impedances occur remain close special network design maximum power transfer. Practically, very very high impedances don't need known accurately.The Polar diagram can't show simultaneous large impedances region with acceptable accuracy, because limited paper size.
355.9
Using this fact Phillip Smith, engineer Bell Laboratories, developed so-called Smith Chart 1930s.The chart's origin Left right resistive values along real axis ?.The imaginary reactive axis (imaginary axis, Im-Axis) ends 100% reactive High resolution provided close origin. away chart's centre resolution drops. Further from centre chart, resolution error increases. standard Smith Chart only displays positive resistances unit radius (r=1). Negative resistances generated instability (e.g. oscillation) outside unit circle. this nonlinear scaled diagram, infinite Re-Axis `theoretically' bent zero point Smith Chart. Mathematically shown that this will form Smith Chart's unit circle (r=1). dots lying this circle represent reflection coefficient magnitude (100% mismatch). positive combination with resistor will mathematically represented polar notation reflection coefficient inside Smith Chart's unity circle. Because Smith Chart transformed linear-scale polar diagram, 100% polar diagram rules. Cartesian-diagram rules changed non-linear scaling.
Start
Stop 1000
Philips Manual Edition Appendix
Special cases:
Dots below horizontal axis represent impedance with capacitive part Dots laying horizontal axis (ordinate) 100% resistive Dots laying vertical axis (abscissa) 100% reactive 180° 360°
L-Area
135° L-Area Scaling rule determine Magnitude (vector distance) reflection coefficient
180°
-135°
C-Area
-45°
Fig.8: BGA2003 output Smith chart (S22)
special cases zero infinitely large impedance illustrated (above).The upper half circle inductive region.The lower half circle capacitive region.The origin system reference (ZO).To more flexible, numbers printed chart normalized Normalizing impedance procedure: System reference impedance (e.g.,
Example: Calculation: Result:
Plot resistor into upper BGA2003's output Smith chart. Znorm1=100/50=2; Znorm2=25/50=0.5 resistor appears horizontal axis location resistor appears horizontal axis location following three circuits, capacitors inductors specified amount reactance their 100MHz design frequency. Determine value parts. Plot their impedance BFG425W's output (S22) Smith chart.
Example1:
Philips Manual Edition Appendix
Circuit:
Result:
case
135° Case
Case 180°
case
case
Case
-135°
-45°
-90°
Calculation:
Case (constant resistance)
From circuit
39.8nH
Z(A)norm ZA/50 j0.5 Drawing into Smith chart
Case (constant resistance variable reactance variable capacitor)
From circuit
Z(B)norm=ZB/50=0.5-j(0.2 0.5) Drawing into Smith chart Case (constant resistance variable reactance variable inductor)
From circuit
Z(C)norm=ZC/50=(0.5 1)+j0.5 Drawing into Smith chart
Example2:
Determine BFG425W's outputs reflection coefficient (S22) 3GHz from data sheet. Determine output return loss output impedance. Compensate reactive part impedance.
Philips Manual Edition Appendix
Calculation:
data Smith chart read with improved resolution using vector reflection coefficient Polar notation. Mechanically measure scalar length from chart origin 3GHz (vector distance). chart's right side printed ruler with numbers Read from equivalent scaled scalar length 0.34 Measure angle -50°.Write reflection coefficient vector polar notation
Procedure:
Normalized impedance:
-45°
Because transistor characterized bench test set-up Impedance:
-90°
output BFG425W equivalent circuit 65.2 with 1.38pF series capacitance. Output return loss, compensated: RLOUT= -20log(|r|)=9.36dB resulting VSWROUT=2 compensation reactive part impedance, take conjugate complex reactance: Xcon=-Im{Z} -{-j38.4} +j38.4 resulting
series inductor will compensate capacitive reactance.The input reflection coefficient calculated
Output return loss, compensated: RLOUT= -20log(0.132)=17.6dB resulting VSWROUT=1.3 Please note: practical situations output impedance function input circuit.The input output matching circuits defined stability requirements, need gain noise-matching. Investigation done using network analysis based s-parameters.
Philips Manual Edition Appendix
Small signal amplifier parameters
2.2.1 Transistor parameters, microwave
currents voltages, assume transistor acts like voltage-controlled current source with diode clamping action base-emitter input circuit. this model, transistor specified large-signal DC-parameters, i.e., DC-current gain hfe), maximum power dissipation, breakdown voltages forth.
Thermal Voltage:VT=kT/q26mV@25°C Collector reverse saturation current frequency voltage gain Current gain
Increasing frequency audio frequency range, transistor's parameters change frequency-dependent phase shift parasitic capacitance effects. characterization these effects, small signal h-parameters used.These hybrid parameters determined measuring voltage current terminal using open short (standards) other port. h-parameter matrix shown below.
h-parameter Matrix:
Increasing frequency ranges, open ports become inaccurate electrically stray field radiation.This results unacceptable errors. this phenomenon, y-parameters were developed.They again measure voltage current, only `short' standard.This `short' approach yields more accurate results this frequency region. y-parameter matrix shown below.
y-parameter Matrix:
Further increasing frequency, parasitic inductance `short' causes problems mechanical-dependent parasitics. Additionally, measuring voltage, current phase quite tricky.The scattering parameters, s-parameters, were developed based measurement forward backward traveling waves determine reflection coefficients transistor's terminals ports). s-parameter matrix shown below.
s-parameter Matrix:
Philips Manual Edition Appendix
2.2.2 Definition s-parameters
Every amplifier input port output port 2-port network).Typically input port labeled Port-1 output labeled Port-2.
port port
Matrix:
Equation:
Fig.10: Two-port network's waves
forward-traveling waves traveling into DUT's (input output) ports. backward-traveling waves reflected back from DUT's ports expression `port terminate' means This conjugate complex power match! previous chapter reflection coefficient defined
Reflection coefficient:
Calculating input reflection factor port
with output terminated
That means source injects forward-traveling wave (a1) into Port-1. forward-traveling power (a2) injected into Port-2.The same procedure done Port-2 with
Output reflection factor:
with input terminated
Gain defined
forward-traveling wave gain calculated wave (b2) traveling Port-2 divided wave (a1) injected into Port-1.
backward traveling wave gain calculated wave (b1) traveling Port-1 divided wave (a2) injected into Port-2. Forward transmission:
normalized waves defined signal into Port-1 signal into Port-2
Isolation:
Input return loss:
Output return loss: signal Port-1 Insertion loss: signal Port-2
Philips Manual Edition Appendix
normalized waves have units referenced system impedance shown following mathematical analyses: relationship between written
Rem:
Substituting:
Volt Unit Watt
Because
normalized waves determined measuring voltage forward-traveling wave referenced Directional couplers VSWR bridges divide standing waves into forward-
system impedance constant
backward-traveling voltage wave. (Diode) Detectors convert these waves Vforward Vbackward voltage. After easy processing both voltages, VSWR read. VHF-SWR-meter built from (Nuova Elettronica). consists three strip-lines.The middle line passes main signal from input output. upper lower strip-lines select part forward backward traveling waves special electrical magnetic cross-coupling. Diode detectors each coupled strip-lineend rectify power voltage, which passed external analog circuit processing monitoring VSWR. Applications include: power antenna match control, output power detector, vector voltmeter, vector network analysis, AGC, etc.These kinds circuit kits discussed amateur radio literature several magazines.
Vforward
Detector
Vbackward
2.2.2.1
2-Port Network definition
forward
Input return loss
Port-1 backward
Port-2
Output return loss
Fig.11: S-parameters two-port network
Forward transmission loss (insertion loss)
Philips' data sheet parameter Insertion power gain Reverse transmission loss (isolation)
Philips Manual Edition Appendix
Example: Calculation:
Calculate insertion power gain BGA2003 100MHz, 450MHz, 1800MHz, 2400MHz bias set-up VVS-OUT=2.5V, IVS-OUT=10mA. Download s-parameter data file [2_510A3.S2P] from Philips website page Silicon MMIC amplifier BGA2003.
This section file:
Freq
1800 2400 Results:
0.58765 0.43912 0.39966 0.21647 0.18255 100MHz 450MHz 1800MHz 2400MHz
-9.43 -28.73 -32.38 -47.97 -69.08
21.85015 16.09626 14.27094 4.96451 3.89514
163.96 130.48 123.44 85.877 76.801
0.00555 0.019843 0.023928 0.07832 0.11188
83.961 79.704 79.598 82.488 80.224
0.9525 0.80026 0.75616 0.52249 0.48091
-7.204 -22.43 -25.24 -46.31
20?log(21.85015) 26.8
20?log(4.96451) 13.9 20?log(3.89514) 11.8
2.2.2.2
3-Port Network definition
Typical products 3-port s-parameters are: directional couplers, power splitters, combiners, phase splitters. 3-Port s-parameter definition:
port1 port3
port2
Port reflection coefficient return loss: Port Port Port
Fig.12: Three-port networks waves
Transmission gain: Port 1=>2 Port 1=>3 Port 2=>3 Port 2=>1 Port 3=>1 Port 3=>2
Philips Manual Edition Appendix
amplifier design fundamentals
2.3.1 bias point adjustment MMICs
S-parameters dependent bias point frequency, shown previous chapter. Consequently, s-parameter files include bias-setting data. It's recommended this setup because s-parameter will valid different bias point. example bias-circuit design illustrated with BGU2003 Vs=2.5V; Is=10mA.The supply voltage chosen VCC=3V.
Ctrl CTRL
+VCC CONTROL
Vp-Out
V/10 Vs+OUT
BGA2003 equivalent circuit: main transistor. forms current mirror with Q5.The input current this current mirror determined current into Ctrl.pin. limits current when control voltage applied directly Ctrl input. decouple bias circuit from input signal. Because located same die, Q5's bias point very temperature-stable.
bias setup
ICTRL (mA)
From BGA2003 datasheet, Figs were combined (see adjacent graph) better illustrate MMIC's relationship. line shows graphical construction starting with requirement IVS-OUT=10mA, automatically crossing ordinate ICTRL=1mA, finishing into abscissa VCTRL=1.2V
IVS-OUT (mA)
VCTRL
bias point adjustment transistors
2.3.2 bias point adjustment transistors
contrast easy bias setup MMICs, here design setup used, example, audio amplifiers.
Philips Manual Edition Appendix
bias setup with stabilization voltage feedback advantage this setup very highly resistive, resistor lowering input impedance terminal [IN] negated, IF-band filter less loaded. Because there emitter feedback resistor, high gain achieved from Q1.This needed narrow bandwidth, high-gain amplifiers.The disadvantage very stability operating point caused BE-diodes' relatively linear negative temperature coefficient ca.VBE -2.5mV/K into amplified This lowered adding extra resistor between ground emitter. emitter resistor disadvantage gain loss need bypassing capacitor. Additionally, transistor will loose quality performance (instability) will have emitter heat sinking into plane. medium output power, bias setup must stabilized increased junction temperature causing drifting.Without stabilization transistor will burn distortion rise. possible solution illustrated adjacent picture (BFG10). Comparable BGA2003, current mirror designed together with transistor T1.T1 works like diode with (VBE) drift close transistor (DUT) case close thermal coupling.With ,1=DUT VBE-1VBE-DUT very simplified algebraic analysis:
bias
C14, C15,
input
output
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finalizing into very temperature-independent relation ship IC-DUT (Vbias-VBE)/R2 best current imaging, structure areas should have similar dimensions.
2.3.3 Gain definitions
gain amplifier specified several ways depending (theoretical) measurement implemented, stability conditions, matching (e.g. best power processing, max. gain, lowest noise figure certain stability performance). Often certain power gains calculated upper lower possible parameter extremes. Additionally calculating circles smith chart (power gain circles, stability circles) used select useful working range input output.The algebraic expressions used vary from literature source other. reality cannot neglected, causing output being function required source input being function required load.This makes matching complicated part design procedure.
Transducer power gain:
This includes effect matching device gain doesn't take into account losses components.
Power gain operating power gain:
Used case non-negligible S12, independent source impedance.
Available power gain:
independent load impedance.
Philips Manual Edition Appendix
Maximum available gain (MAG):
could ever hope from transistor under simultaneous conjugated match with Rollett stability factor K>1. calculated from s-parameters several steps. frequency unconditional stability, (GT,max=GP,max=GA,max) plotted transistor data sheets.
Maximum stable gain:
figure merit potentially unstable transistor valid (subset MAG). frequency potential instability, plotted transistor data sheets. Further examples used definitions design amplifiers: Maximum transducer power gain under simultaneous conjugated match conditions GT,max Minimum transducer power gain under simultaneous conjugated match conditions GT,min Unilateral transducer power gain Minimum operating power gain potential unstable devices GP,min Unilateral figure merit determine error caused assuming S12=0.
adjacent example shows BGU2003's gain function frequency frequency range MMIC potentially unstable. Above MMIC unconditionally stable (within range measurement) maximum unilateral transducer power gain assuming S12=0 conjugated match: S12=0 (=unilateral figure merit) specify unilateral 2-port network resulting K=infinite DS=S11*S22
gain (dB)
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Gmax
(MHz)
further details please refer books e.g. Pozar, Gonzalez, Bowick, etc.
2.3.4 Amplifier stability
variables must processed with complex data.The evaluated Kfactor only valid frequency bias setup selected s-parameter quartet [S11, S12, S21, S22]
Determinant:
Rollett stability factor:
Philips Manual Edition Appendix
some literature sources, size isn't take into account dividing into following stability qualities. |Ds|<1 Unconditionally stable combination source load impedance Potentially unstable will most likely oscillate with certain combinations source load impedance. does mean that transistor will useable application. means transistor more tricky use. simultaneous conjugated match isn't possible. -1<K<0 Used oscillator designs |Ds|>1 This potentially unstable transistors with need SWR(IN)=SWR(OUT)=1 manufactured have gain GT,min.
References Application Basics Design Basics
Philips Semiconductors, Wideband Transistors MMICs, Data Handbook SC14 2000, S-parameter Definitions, page Philips Semiconductors, Datasheet, 1998 Product Specification, BFG425W, 25GHz wideband transistor Philips Semiconductors, Datasheet, 1999 Product Specification, BGA2003, Silicon MMIC amplifier Philips Semiconductors, Datasheet, 2000 Product Specification, BGA2022, MMIC mixer Philips Semiconductors, Datasheet, 2001 Product Specification, BGA2711, MMIC wideband amplifier Philips Semiconductors, Datasheet, 1995 Product Specification, BFG10; BFG10/X, 2GHz power transistor Philips Semiconductors, Datasheet, 2002 Product Specification, BGU2703, SiGe MMIC amplifier Philips Semiconductors, Discrete Semiconductors, FACT SHEET NIJ004, Double Polysilicon technology behind silicon MMICs, transistors modules Philips Semiconductors, Hamburg, Germany,T. Bluhm, Application Note, Breakthrough Small Signal VCEsat (BISS) Transistors their Applications, AN10116-02, 2002 H.R. Camenzind, Circuit Design Integrated Electronics, page34, 1968, Addison-Wesley, Prof. Dr.-Ing. Schmitt,Telekom Fachhochschule Dieburg, Hochfrequenztechnik Bowick, Circuit Design, page 10-15, 1982, Newnes page 25-30, 1986, Franzis-Verlag U.Tietze, Schenk, Halbleiter-Schaltungstechnik, page 1993, Springer-Verlag Bauanleitungs-Handbuch, Band1, page 281-284, 1981, ING.W. HOFACKER MicroSim Corporation, MicroSim Schematics Evaluation Version 8.0, PSpice, July 1998 Karl Hille, DL1VU, Dipol Theorie Praxis, Funkamateur-Bibliothek, 1995 PUFF, Computer Aided Design Microwave Integrated Circuits, California Institute Technology, 1991 Martin Schulte, `Das Licht Astrophysik, 07.Feb. 2001, Astrophysik%20Teil%201%20.pdf http://www.k5rmg.org/bands.html SETI@home, Kathrein, Dipl. Ing. Peter Scholz, Mobilfunk-Antennentechnik.pdf, log.-per. Antenne K73232 Siemens Online Lexikon Werkbuch Elektronik,Teil Auflage, Franzis-Verlag, 1989 ARRL, American Radio Relay League
Philips Manual Edition Appendix
Introduction noise
Definition equivalent noise source noise temperature
resistor, broadband white (Nyquist) noise voltage caused environmental temperature TU>0 Kelvin.The noise voltage source, Uref circuit diagram, causes same noise voltage heated resistor. Resistor hase same resistance heated one, assumed noise less. power this noise voltage source delivered into load Kelvin=-273°C Temperature Kelvin bandwidth Noise power bandwidth injected into load Boltzmann constant 1.380622610-23Ws/K Noise resistance Load resistor same way, define noise current source: Noise current source, causing noise voltage across parallel noiseless resistor statistical power distribution over frequency thermal noise constant called `white-noise' (Nyquist-noise). noise power referenced noise-bandwidth. measured system bandwidth must converted into rectangular p622]: Knowing -6dB bandwidth system gives rough Bnoise: Equivalent noise bandwidth: define accessory noise factor Two-port accessory noise factor: some literature, this used equations involving introduction, transformed noisy heated resistor into equivalent noise sources.The noisy resistor so-called noise temperature Noise temperature: absolute reference temperature ([2] SPICE default 300.15K 27°C) noise temperature noisy resistor. noise temperature causes fictive resistor generating thermal noise power density equal former noise source. Antenna noise temperature: e.g. used scanning radar antennas
Uref
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bra464
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Philips Manual Edition Appendix
Determine equivalent noise sources
Normally, power matches used designs:
power match, voltage delivered load half generator quantity delivered current half shunted source, resulting maximum power delivered into load. Maximum current IL(max) (current match) found RL=0 generating
This 100% grilled Maximum available power from source found RL=Rg with PRg=P0-PL burned
with quantity
load noise voltage; UL=0.5*U0 valid power match
power match: RN=RL consequently TN=TL
Noise peak-voltage across load voltage equivalent noise source's generator
introduction, mentioned dependence shunt, open matched source.This indicates that noise available into two-port function return loss (load source impedance relationship). LNAs, input impedance must matched equivalent noise-source impedance specified datasheets characteristic noise-parameters. cascaded amplifiers, typically rating noise-figure noise temperature ideal (noise matched) condition given. mismatch noise-source too.This mismatch seen loss delivered power into two-port. Furthermore, loss power caused e.g. resistive power attenuator. such attenuator building blocks, noise-figure identical attenuation (explained later chapter). resulting equation (12) confirmed [10, p161] without explanations algebraic rooting. Some literature e.g. operational amplifiers, uses unit expressions
Normalized bandwidth gives bandwidth independent normalized noise voltage quantity:
simplification comparison noise performances measured under different conditions applications.
Philips Manual Edition Appendix
Noisy two-port device: noise figure
two-port device (amplifier, attenuator, detector, filter), just loaded with characteristic impedances input output, generates outgoing noise power towards load without two-port input signal.This noise power found temperature TU>0K. Replacing input-matching resistor source shows that this noise power adds device's output signal shown diagram.The noise power caused amplifier itself (e.g. semiconductor noise) There f(PI) noise power two-port Noise power caused input source Additional noise power caused two-port itself Two-port transfer-function (=frequency-dependent gain)
f(Pi)
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Noise-Factor:
SNR( SNR(OUT
Input Signal Noise Ratio Output Signal Noise Ratio
Signal Noise Ratio:
SNR( SNR(OUT
SNR(
SNR(OUT
Noise gain Signal gain Noise Figure: Two-port's equivalent noise temperature found from noise factor vice versus
acc. [23]
[dB] Quality
minimum detectable signal Minimal quality understanding voice Good quality understanding voice Minimum quality need music
expression noise temperature used e.g. extremely noise amplifiers like Radar applications (amplifier, antenna), cooled CCD-image cameras, infrared-emission-microscopes (used failure analysis labs investigating semiconductors), infrared cameras, etc. cooling made Peltier elements down about -50°C liquid nitrogen down about -196°C.
Philips Manual Edition Appendix
Noise Figure terminated amplifiers semiconductor noise
SNR(IN) SNR(OUT) Power signal generator generator's source resistance Noise power injected into amplifier Amplifier's output load power delivered into load POUT noise power available from amplifier output delivered into load amplifier input amplifier output Bandwidth amplifier
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Input related Noise-Factor according Friis equation
amplifier's self-generated output noise power with equivalent amplifier self generated input noise power.That means noisy amplifier with output noise PNV(OUT) replaced noiseless two-port (black-box) heated resistor connected noiseless input.This noise-resistor noise temperature causing equivalent input noise quantity PNV.To determine two-port Noise-Factor source generator seen generating signal reference-noise power injected into two-port input. PN1=PNS into gives:
noise power delivered load gained input noise plus amplifiers self-generated noise output power quantity PNV(OUT). into gives:
shoot into gives:
with
Amplifier input related noise temperature 290K normal- reference-temperature
noise temperature two-port given data sheet, input related. noise factor noise figure expressed two-port, referenced normal temperature (290 Kelvin).
Philips Manual Edition Appendix
Noise Figure versus noise temperature
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-160 -165 Pn(T)/(dBm) into -170 -175
(dB)
F/[dB] -L(Pn)/[dBm]
-180 -185
10-1
(°K)
-190
Noise Figure versus noise temperature
previous section output noise power noisy port evaluated:
Teff
gives:
bra468
gives
From equation see, that output noise temperatureTN2 gained effective input noise temperature Teff. shows that noise temperatures different sources input port added.The amplifier noise temperature converted into noise factor referencing normal temperature TN1=TN0. Please note adding only allowed with linear quantities. dBs!
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Philips Manual Edition Appendix
Noise temperature lossy device (attenuator, cable etc.)
attenuator two-port with gain: Attenuation factor
noise factor
(for details refer previous chapters)
Because Friis Noise-Factor referenced attenuator passive two-port. does generate additional pink-noise into pass-band bandwidth happens semiconductor device. resistive behavior working system impedance output Nyquist noise power into gives:
attenuator with temperature TATN=T0 follows noise factor: From definition found
That means e.g. cable system adds white noise, modeled noise factor equal damping (attenuation) factor example, filter with insertion-loss noise figure This behavior explained following practical too: ideal signal generator injects clean signal into attenuator.This signal generator impedance heated with temperature causing certain SNR(IN) referenced system noise power N0.The attenuator drops down signal power attenuation. attenuator does create self-noise power output again referenced causing equal reference noise power because only signal power changed attenuation factor same, input output S(in)=D*S(out); N(in)=N(out)
linear quantity
resistively lossy two-port: two-port defined: Subtracting gives again:
NF=Losses [dB]
quantity [dB] quantity [dB]
Cables attenuators sources white noise! problem noise caused resistive loss valid circuits, like passive filters, resonators used oscillators, strip-lines, strip-lines, there frequency-dependent conductive losses dielectric losses. some programs, these separately defined.
Noise temperature resistor
noise temperature resistor equal body temperature. noise factor
Philips Manual Edition Appendix
Cascading noisy blocks
Teff1
Teff2
Tnv1
Tnv2
bra473
gives
This equal amplifier (eff. gain with equal input noise temperature TNV1+TNV2/G1. reference temperature injected into cascaded amplifier determine Friis Noise factor. resulting amplifier noise temperature cascaded amplifier results
into results effective system access noise factor.T0 canceled out.
(9).
(10) resulting effective system noise factor becomes: (12)
(11)
Noise Figure: (13)
3.10 Example: main satellite receiver system design
receiver system TSYS(eff) build dish (TANT) with built-in (G1;TLNA), followed lossy cable (damping factor Dcabel=1/G2; temperature Tcabel) ending receiver (G3;TSATR): Scheme cascading noise temperatures: Applied present case: (TANT=TN1 from previous section)
Philips Manual Edition Appendix
Noise factor cable
resulting input-related noise temperature satellite system linear quantity [u])
effective system noise figure
(antenna dish included)
certain allowed maximum error rate (demodulated signal) baseband processor output, equivalent baseband SNR(SATRBB) determined.The relationship versus depends modulation used.The SNR(ANT) dish input must better least factor FSYS(eff). effective noise power SAT-dish determined min. signal operation then easily found linear quantity [u])
antenna signal power >PSant(min) ensures min. SAT-receiver's baseband processor, this quantity appears SAT-system sensitivity requested BER. level noise floor baseband processor output given (10)
[25, given function `the Defense Science Technology Organization (DSTO) support Modernized High Frequency Communications System (MHFCS) [1], (also referred project nomenclature JP2043), built serve Australian Defense Force.'. `This work covers wide range topics including characterization expected noise channel distortion, waveform design, protocol design, radio access scheme design, provision Internet services, overall system design, modeling simulation end-user service performance.
Bit-Error Rate 10-1 10-2
bra474 Turbo-Coded Chirp, bps, int. Conv.-Coded Chirp, bps, int. TCM-16, bps, int. TCM-16, bps, int. TCM-16, 1200 bps, int. TCM-16, 2400 bps, int. 52-tone, 4800 bps, interleaving Single-tone (std), 2400 bps, int. Single-tone, 3200 bps, int. Single-tone, 4800 bps, int.
10-3 10-4 10-5
Channel (dB)
Philips Manual Edition Appendix
3.11 Antenna noise
Antenna noise sometimes called noise.The antenna receives noise from several sources [20, p5]: Terrestrial noise (man-made noise) sources Solar noise sources Galactic sources Noise caused antenna radiation food impedance
size noise source depends antenna elevation angle, time day, activity, frequency. These noises modeled increased thermal-noise temperature antenna.
Frequency Range 30KHz 300KHz 300KHz 3MHz 3MHz 30MHz 30MHz 300MHZ 300MHz 3GHz 3GHz 30GHz <30MHz 30MHz 1GHz 1GHz 10GHz temperature >108K >108K 105K 103K 100K Root cause Very high atmospheric noise High atmospheric noise Atmospheric noise High Galactic noise Galactic noise cosmic background noise Atmospheric thermal noise, resonance Noise lighting discharges `atmospherics' Galactic cosmic noise Noise generated atmosphere. vertical antenna will receive less noise than horizontal antenna. noise temperature approach minimum cosmic background radiation (relic `Big Bang') low-noise window used radio-telescopes space telemetry noise temperature rises peaks resonance effects water vapor oxygen molecules resonance), finally reaching steady value around 290Kelvin.
2GHz 8GHz >10GHz
[21, says `antennas radiate broadband `blackbody' noise corresponding their surface temperature. beam antenna narrower than noise', `sees' background with noise temperature Tb=290k. satellite dish aimed earth surface only receiving earth's surface black body noise will have antenna temperature TANT=290K. antenna's beam loop sees only earth's noise, effective antenna temperature rated share responsible temperature noise sources main loop:
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Example TSKY given upper table.
Zenith
Horizon
Elevation angle
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(GHz)
International Telecommunication Union (ITU) defined CCIR report 322) frequency dependent atmospheric interferences CCIR report 258-4) man-made noise. further details e.g.:
Philips Manual Edition Appendix
According [24, p5-6]: statistical behavior antenna noise factor, shown plotting distribution normal probability graph where random variables that Gaussian distributed form straight line with slope equal standard deviation median equal mean.The graph used determine median antenna noise figure rural, residential, business environment. Further analysis includes determining within-the-hour-, hour-to-hour-,
above KT0b) Atmospheric
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Night
Business Residential Rural Quiet Rural Galactic 1000 Frequency (MHz)
measured noise factor receiver noise factor antenna noise factor
Adjacent average interference power produced man-made radiation, received short vertical antenna with ideal earth [26, (acc. ITU-R P.372-7 `Radio noise', Figure
(dB)
bra478
Environment Business area (trace Residual area (trace Countrified area (trace Calm countrified area (trace Galactic noise (trace
76.8 72.5 67.2 53.6
27.7 27.7 27.7 28.6
10-1
(MHz)
3.12 Example: radar system
Antenna: Receiver: Bandwidth: Gain: Baseband: TQ=350k TV=380k BW=1MHz G=100dB SNR(OUT)=10dB
Effective system input related temperature:
noise temperatures un-weighted added, because source.
SNR(OUT)
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Tv=Amplifier
Tq=Antenna
Philips Manual Edition Appendix
13.2dB
-96.8dBm
3.13 Input output related noise temperature
Available effective input noise temperature Teff amplifier. Teff source noise temperature Tsource amplifier itself generate equivalent input noise temperature
Teff system related noise sources referenced noise free gain block. This gain block made noise free using equivalent input related noise temperature output related effective noise temperature
equivalent gain block with NF=0dB.The effective output noise power
with gain amplifier.
3.14 Amplifier sourced noisy generator
Noise signal generator Noise
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SNR(g) Signal
Amplifier
Tout
Converted system Amplifier Pneff Signal Noise(eff)
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SNR(in)
Tout Pnout Psout
SNR(out)
Rneff Teff
Philips Manual Edition Appendix
3.15 Noise Figure, noise temperature sensitivity receiver
equivalent noise temperature two-port (e.g. receiver) Te.The Noise factor two-port (four pole device) determined referring reference temperature (room temperature) typically 290K (sometimes 300k).
temperature theoretically resistor causing same two-port output noise power than noisy two-port self. noise power into bandwidth -174dBm receiver with noise figure does have equivalent input related noise power
This called receivers noise floor.The term equation comes from SNR's definition:
minimum detectable signal must least break through receivers noise floor: MDS=PNiRec
Third order intermodulation-free dynamic range, IMD3, range where signal processed detected without distortion: analog digital converters (ADCs) term spurious free dynamic range (SFDR) used too.The noise floor ADCs evaluated from binary resolution terminated quasi-random quantization noise.That means does have noise figure too.This causes output signal noise relation SNR(OUT)=SNR(IN)-NF dB.This used receiver system analysis with digital baseband processing DSP.The either behind demodulator modern designs) rail replacing analog demodulator. some literature, term noise floor power density (NFPD) used.That's equivalent noise temperature terminated receivers noise floor theoretically wide
3.16 Noise sources semiconductor devices
noise source defined noise figure: Noise voltage source: Noise current source:
square quantity equivalent noise sources [2]. noise source's generator resistance. come relation: with
amount noise power delivered into load different, because power matching current voltage; each half quantity:
Philips Manual Edition Appendix
Noise source current:
Noise source voltage:
Effective noise voltage:
unit
Power noise spectral density:
Voltage noise spectral density:
unit
Equivalent noise voltage:
unit [V/Hz]
Current noise spectral density:
Noise spectra: Shot noise: Shot noise current: Short noise voltage: model parameter caused junction [33, p42] ref. [34, p77] =dynamic junction impedance (base emitter diode) Electron charge: Transistor forward transconductance: Coulombs; 1C=1J/Kelvin (small signal):
Generation-recombination noise:
model parameters
generation-recombination noise alternatively called combination-, recombination-, burst- popcorn-noise. Flicker noise: b=model parameter Normally Sometimes Shot noise Flicker noise called excess noise. Flicker noise current: Flicker Noise noise [34, p44-45]
Philips Manual Edition Appendix
coarse model heterodyned order flick noise (1/f-noise) broadband white noise versus frequency given [10, p149]:
Flicker noise corner frequency White noise diagram shows noise power versus frequency e.g. transistor. oscillators this noise distribution envelopes carrier.
flicker noise white noise
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More accurate modeling used higher order polynomial power density equation [10, p149]:
dP/df
1/df^4
random walk noise: (1/f4) flicker noise: (1/f3) Random walk noise white noise: (1/f2) Flicker noise: (1/f1) White Nyquist noise floor: (1/f0)
1/df^3
1/df^2 1/df^1 1/df^0
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Root cause different noise envelope selections: noise resonator causes FM-modulation with 1/f2 frequency response.This 1/f2 modulation converted back into modulation with 1/f3 trace.Temperature instability microphonic (mechanical) noise cause so-called random walk noise with 1/f2 noise sidebands.This converted into 1/f3 noise. According [19, p250-252]
Spectrum envelope tangent 1/f4 1/f3 1/f2 1/f1 1/f0 Name Random walk Flicker White Flicker White Root cause External physical environment influencing oscillator. mechanical shock, vibration, temperature, Physical resonance mechanism active oscillator, design choice parts used electronic, power supply environmental properties. high quality oscillators marked noise. White frequency, random walk frequency. Noise passive-resonator frequency standards like cesium rubidium frequency standards Flicker modulation phase. Common high-quality oscillators. Introduced next-stage noisy electronics. Amplifiers gain oscillator carrier multiplier. Produced same like Flicker M.The late amplifier stage usually responsible. Narrow-band filter output help.
Philips Manual Edition Appendix
3.17 Frequency range noise contributions
Noise type White- (Thermal-) (Nyquist-) PinkShot- (Schottky-) Root cause noise phenomena Random movement thermal charged carriers resistive elements Frequency dependent current causes random space charge areas with individual current impulses, random transport charge carriers. From [33, p42] caused quantum nature electron flow through potential barrier junction). Random generation regeneration carriers fluctuation between different semiconductor potentials Random recombination effects defects semiconductor crystal barred; borders diffusion areas material surface Noise biased magnetic substances [11, p61] Created junction operating reverse breakdown mode. Electrons with very high kinetic energy collide with crystal atoms produce electron holes. Frequency range Envelope noise spectra constant F(f) F~IC white
104Hz 109Hz
Popcorn- (Burst-) Flicker- 1/f(Contact-) (Johnson-) BarkhausenAvalanche- [18]
below 100Hz 100Hz 1KHz most interesting 100Hz
F=1/f2 F=1/f
like shot noise higher intensity
accessory noise factor used model theoretically noiseless two-port model.This model input signal from source input noise source causing same output noise power former noise two-port.
3.18 Sideband noise oscillators mixers
oscillators mixers, single sideband noise double sideband noise measured. reality, both sidebands don't need equivalent. (Flicker-Noise) Corner Frequency Found amps transistors), about 10Hz 100Hz. Crossing border will show that Noise ends white Nyquist noise floor.The corner frequency dependent Fab-process, application conditions, temperature bias [34, p46]. ~Channel length, III-V group devices like GaAs IGaP have much larger than devices. Consequently, Philips (e.g. BFG425W) 4.5th (e.g. BFG325W) family Si-WBT preferred microwave oscillators.That's because close-to-the-carrier sidebanddominant flicker noise much better double-poly transistors than III-V semiconductor products. fC(Si) fC(III-V).A good synthesizer particularly improve sideband noise enveloping oscillator carrier.This partially depends filter bandwidth.
flicker noise lower side band Posc
flicker noise upper side band
white noise
Carrier
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Receiver Intefering signal
Phase noise Downconverted interfering signal
Wanted signal
Downconverted wanted signal
Receiver
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influence oscillator's sideband noise receiver selectivity shown figure above [35, p2]. clean oscillator carrier will only cause converted wanted signals pass filter. sideband noise, unwanted signal converted into band too.The sideband noise causes jitter with consequence increased BER.
Philips Manual Edition Appendix
transmitter oscillators, carrier noise causes channel power injection into next closed channel, illustrated [35, p2].
Effect phase noise ACPR
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Mixers oscillators built with dual gate MOSFETs, JFETs., MMICs transistors. example, Philips Semiconductors offers MMIC Mixer BGA2022 (half balanced structure). Adjacent idea mixer with varicap-tuned JFET VCO.This example uses PMBFJ620, which used various applications from through audio into range.
RF-IN BIAS CONTROL Filter load IF-OUT
IF-FILTER
Filter load
Mixer
BGA2022
SYNTHESIZER
PMBFJ620
LO-Amp Colpitts
tuning
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oscillator works classical common Darin-Colpitts circuit, with output impedance.The buffer amplifier work common gate circuit like differential amplifier circuit. Common source would possible too. Both FETs self-biasing with VGS<0V. symmetrically Varactor tuning circuit reduces harmonics, drift rectifying, temperature effects offers tuning voltage range down Vr=0V. Eventually diode will need from Gate-J3 GND.The tapped transformer resonator sets positive feedback.The C19, parallel shrink frequency variation range.To reduce phase noise, Varactor voltage tuning range should maximum. parallel capacitor reduces required frequency variation range C19, C20, parallel quantity very high frequencies, Hartley configuration (taped interesting because allows removal potential source Nyquist noise.
Philips Manual Edition Appendix
passive highly-linear double-balanced mixer (DBM) based PMBFJ620 JFETs shown. Because VDS=0, FETs work linear (resistive) mode.The amplitude must drive FETs clear into switch mode. Applications include down- conversion mixers, phase comparators, frequency doublers.The Baluns used convert none-balanced signal into balanced impedance transformation. balanced signal (without available, directly connected FET-quartet without affected Balun. further improved IP3, several DBMs combined. Because this passive mixer, insertion loss IL.The Noise Figure approximately equals because there supply current, amount semiconductor Shot-Noise reduced.
3.19 Equivalent input related noise source
f(Pi)
Two-port generating noise power itself
Pian
f(Pi)
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Noiseless two-port with separate input noise source
equivalent noise power two-port with 1.3806226_10-23Ws/k |10log()
Input related equivalent noise floor two-port:
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This relationship often used receivers spectrum analyzers specifying sensitivity these systems.
minimum power signal demodulation must least break through noise floor.This quantity so-called Minimum Detectable Signal [10, p118].
two-tone dynamic range receiver [12, p113]: This equation shows that dynamic range lower limit determined receiver sensitivity upper limit caused distortions.
Philips Manual Edition Appendix
References Introduction into noise
[10] [11] [12] [13] [14] [15] [16] [17] [18] [19] Becker, Bonfig, Handbuch Elektrische Hewlett Packard, 1998, page 558-565 SPICE, E.E.E. Hoefer, Nielinger, Springer-Verlag, 1985, page 101-102 SPICE, guide circuit simulation analysis using PSpice, P.W.Tuinenga, Prentice Hall, 1988, page Agilent, ADS, Diode_Model (PN-Junction Diode Model), page Agilent Technologies, Sischka, 2002, ,,1/f Noise Modeling Semiconductors', MicroSim Corporation,The Design Center, Circuit Analysis Reference Manual,Ver. 5.3, Jan. 1993, page 114-118 Hoffmann, Hochfrequenztechnik, systemtheoretischer Zugang, Springer, 1997 Thumm/Wiesbeck/Kern, 1997 Ulrich Rohde, J.Whitaker,T.T.N. Bucher, Communications Receivers, 1997, edition Hagward, DeMaw, Solide State Design radio amateurs, ARRL, 1986 ifr, 006. need about SINAD, 28.8.2002 Densitron Microwave Limited Noise/Com, catalog Noise Figure Measurement Devices Signetics GmbH, Integrierte Schaltungen, `Das Signetics-Rauschverfahren TBA120S', 4.6.1975 Signetics, analog technology presentation', Signetics Corporation, 1977 Texas Instruments, Application Report Noise Operational Amplifiers, SLVA043, 1998 INFRARED MILLIMETER WAVES.VOL. Copyright 1984 Academic Press. Reprinted, with permission, from Infrared Millimeter Waves,Vol. 239-289, 1984. CHAPTER Phase Noise Noise Measurements Frequency Domain, Algie Lance,Wendell Seal. Frederik Labaar Operations Support Group Space Park Redondo Beach. California,Tn190.pdf Heriot-Watt University Edinburgh, Electrical, Electronic Computer Engineering, `Digital Communications Noise Communication Systems', Feb. 2003, Cl_5_03.doc Veron, Antenna Receiver Noise, Lesson, 2002, Search Extraterrestrial Intelligence, NASA SP-419, 1977, Rothammels Antennenbuch, Auflage, Alois Krischle, DARC Verlag Man-Made Noise 138-MHz Meteorological Satellite Band, Robert Achatz,Yeh Peter Papazian, Roger Dalke, George Hufford, U.S. DEPARTMENT COMMERCE William Daley, 1997, RESEARCH SUPPORT SYSTEMS ENGINEERING MODERNISED HIGH FREQUENCY COMMUNICATION SYSTEM, Cook, Vyden, Sunde Ball, ACTE, University South Australia,The Levels Campus, Mawson Lakes, 5095 Defence Science Technology Organisation, 1500 Salisbury, 5081, Deutscher Amateur-Radio-Club e.V., Referat Gutachten Radio Niederlande 2002, Radio Nederland Wereldomroep, Programme Distribution Department Kentrop, Rudolf Digitale Modulationverfahren, Auflage, 1991, Conrad Electronic, `Satelliten Fernsehen, Alle Programme,Technik Montage Betrieb, Poster' Agilent, Fundamentals Microwave Noise Figure Measurements, Application Note 57-1, 5952-8255E.pdf Frequency Indoor Radiolocation, Matthew Stephen Reynolds, Doctor Philosophy, MASSACHUSETTS INSTITUTE TECHNO LOGY, February 2003, 03.02.reynolds.pdf Fachhochschule Ulm, Prof. Petri, Mikrowellentechnik, Sep. Joshua Israelsohn,Technical Editor, Noise 101, EDN, January 204, Camenzind, Circuit design integrated electronics, Addison-Wesley, 1968 Agilent, Application Note, Hints Making Innovative Signal Source Measurements Wireless Design Verification Using Signal Source Analyzer, 5989-1618EN.pdf `Introduction Front-End', Edition Philips RF-Manual, Appendix Fix, October 2004
[20] [21] [22] [23] [24]
[25]
[26] [27] [28] [30] [31] [32] [33] [34] [35] [36]
Philips Manual Edition Appendix
Performance cascaded blocks
Receiver dynamic range
minimum power signal needed demodulation must break through noise floor [10, p118].This input signal quantity called Minimum Detectable Signal: tone dynamic range receiver: [12, p113]
Cascaded gain
running index involved gain affecting stage System gain: (Quantities
Cascaded noise
factors linear quantity Example Amplifier-1: Gain: Gain: Noise Temperature:TN1 Noise Figure: Noise Factor: System noise temperature: with System access noise factor: with System noise factor: [u]. [dB] [Kelvin] [dB]
System noise figure:
System gain:
[dB]
algebraic root cause shown chapter `Cascading noise specified devices'
Philips Manual Edition Appendix
Cascaded intermodulation
References: [1], p120], p2], p1], p24-25], [9], [11, Third order intermodulation products caused signal sources, interfering nonlinear transfer function device's nonlinear inputs.This transfer function successively approximated order Taylor series polynomial: applied single tone will converted into simple filtered mesh harmonics. applied signals start interfering (mixing). nonlinear transmission function's cubic term order harmonic signals (intermodulation products) generated with frequencies: e.g.: third harmonic two-tone intermodulation product's frequencies relation given with final order distortion product e.g. M+N=3 order harmonic distortions.The difference signals (M+N=3) most dangerous, because effective mixed-out difference frequency signals very close original tones. this, passes receiver's filters carrying information both original signals. principle function mixer based interfering signals second order quadratic term [15, p235-236]. That means mixer should have infinitely long quadratic transfer function causing intermodulation products: f1±f2 2f1. mixer used frequency doubler sourcing input ports with same signal. phase-shift between both will cause output offset used e.g. phase detectors. Example: Input signals f1=99.95MHz f2=100.05MHz fX=100.15MHz f2-f1 100KHz IM1=2f1-f2 99.85MHz IM2=2f2-f1 100.15MHz f1-IM1 100KHz IM2-f2 100KHz
tones with difference causes order signals distance each tone example, wanted signal non-wanted signals passes pre-selection filter. caused order products front-end amplifier.The problem: heterodyning wanted signal with information carriers. distortion product like falling into pass-band longer filtered out.This signal must rejected through demodulation processing gain, limiter suppression (FM-systems) digital error correction algorithms.
wanted wanted
IM-Products
IF-filter Selector
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[15] Increasing input tones will cause order IMDs rising order IMDs 3dB. general p121]: with n=order change fundamental tone IM(n) change order high-linearity devices, like Philips' BAP70 family PIN-diodes, there need take care test equipment self-generated harmonics distortions. cascade amplifiers e.g. three amplifiers, last (3rd) amplifier will start clipping first. further increasing system input power, amplifier starts clipping total input overload, amplifier clips. Because last amplifier rail first overdrive one, quality primary degree responsibility effective system linearity. order intercept point input related (iIP3) output related (oIP3): order input intercept point: Example order: quantities
Philips Manual Edition Appendix
Cascaded input related IP3: fist amplifier's iIP3 unit weighted. Each amplifiers iIP3 coming more close higher weighted multiplying with gain factor former blocks. Cascaded output related IP3: equation shows output first amplifier amplified following amplifiers.This happens each following amplifier. final cascaded output, signals heterodyning. Example: Note:The shown equations only valid in-phase (coherent) heterodyning intermodulation products. Conclusion: gain noise figure first amplifier determines system's noise performance.The higher gain first one, lower noise, better overall noise system performance. last amplifiers order intermodulation determines system's IP3.The lower lower gain amplifiers, better overall linearity system performance certain input power level. Both conclusions applied cascaded systems from e.g. audio microwave applications. Mixers multiplying devices with quadratic transfer function cause order intermodulation. input tones applied nonlinear device causes problematic order difference intermodulation products very close originator tones. Example: front-end
Filter
Amplifier olP3a
olP3a
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preselector (image rejection filter) pass-band insertion loss.
Preselector output order intercept point: oIP3(f)= simulation something like oIP3=40 50dBm used.
Example: input attenuator front front-end does increase input related attenuation factor.This relationship used measurement with e.g. spectrum analyzers. used shortwave receivers e.g. actual received man-made noise causes intermodulation problems.The disadvantage increase noise floor proportional attenuation factor. Out-of-phase (incoherent) heterodyning intermodulation products added discretes quadratic quantities below overall summing square root p24-25].
Philips Manual Edition Appendix
Working with voltage quantities instead measured power will change equations' form p21]: Cascaded noise factor:
Cascaded input IP3:
Cascaded compression
signal reaching input compression point will compress receiver front-end lower gain wanted signal.This desensitizing receiver causes loss sensitivity limiter margin based demodulators distortions demodulators. shown before, gain positive effect reducing system's noise figure sensitivity (MDS). other side, larger gain causes blocks located rail clip much earlier. trade-off between noise figure input intercept point must made receiver. example, noise amplifiers have relatively supply current. Increasing transistor collector current improves linearity raises proportion Shot noise.The front-end linearity must designed handle input signals large necessary low-noise necessary worse case application.The range between these specification limit borders so-called intermodulation free dynamic range analog digital converters, used digitizing processing following DSP, there spoken from spurious free dynamic range SFDR. Offense this noise linearity spec limits will cause problems. example, design have great sensitivity transmission distance small signals, when transmitter receiver close, they will work because saturation. Alternatively, front-end fight every income signal work only close transmitter. solution high-linearity devices front-end rail, like BGA6589, voltage-controlled variable gain amplifier BGA2031/1.This block within automatic gain loop (AGC) prevent saturation high antenna field-strength signals. Because there linear approximation relationship between compression point oIP3oPL1dB+10.63dB, form converted into cascaded [11, p6]. Linear conversion:
Cascaded input related iPL1:
linear
Using next shown compression relation determine oPL1 from cascaded IP3. Output compression point: logarithmic quantity [dB] [dBm] linear quantity
Cascaded output related oPL1:
linear
Philips Manual Edition Appendix
Transmission distance
There several ways increasing transmission distance wireless system: Better antenna (gain, beam, etc.) Higher sensitivity receiver (MDS, noise floor, used modulation, demodulator efficiency) Higher output power transmitter Other operation frequency Improved front-end selectivity (filter) Improved front-end linearity (PL1, IP3) Improved noise-figure (LNA gain
This chapter discusses increasing transmission distance using additional gain block [14, based theory isotropic antenna homogenous round around field radiation ideal spherical dot).The following describes theoretical power-density damped traveling waves, radiated reference-isotropic antenna certain distance: PE(r) Receiver power after distance transmitter's isotropic antenna Distance receiver-transmitter Transmitter power Atmospheric attenuation exponent Receiver antenna surface
used kinds spherical wave energy radiation topics like optics, acoustics, thermal, electromagnetic antenna power matching cable impedance (50, space's impedance with (ideal) electromagnetic far-field impedance received normalized power/unit area receiver, transmitted with power from distance neglecting atmospheric attenuation (=0) TX-RX-distance relation: (=0)
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Without extra relation:
Gain (dB)
Expanded distance extra with same received power:
Using extra gain block, like medium power MMICs BGA6289, BGA6489 BGA6589, increases actual transmission distance factor assuming compression amplifiers isotropic antenna radiator. reality have take into account amplifier input/output matching circuits.
Philips Manual Edition Appendix
Example: transmission distance limited frequency receiver quality
receiver with sensitivity 0.1µV 20dB (=S/N) uses antenna with effective surface cm2, MHz. Determine necessary transmitter power 1000 distance neglecting effects atmospheric ionization anomalies, atmospheric attenuation free space propagation.
PTX=84mW+19.2dBm
(=0)
propagation loss caused isotropic radiation
median noise figure Fam50dB 10MHz.The receiver bandwidth 10KHz.This gives bandwidth terminated receiver Nyquist noise floor
above KT0b) Atmospheric
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Pmed= present receiver, effective equivalent front-end input noise floor specified 20dB below 0.1µV: effective resulting receiver input noise power PFR=PNRE+PmedPmed-84dBm Resulting without man-made median noise +7dB
Night
Business Residential Rural Quiet Rural Galactic 1000 Frequency (MHz)
ideas improvement: Decrease increase transmit power. Selected case: Increase transmitter power order maintenance SNR=20dB above resulting median noise floor receiver's location: PINc= PFR+SNR=-84dBm+20dB=-64dBm PTXc=166KW 10KHz bandwidths SNR=20dB (Music) PTXc=166W 100Hz bandwidth, SNR=10dB (e.g. Morse Code)
Conclusion: shortwave (SW) bands, necessary transmitter power determined high amount man-made noise. that, receiver's noise figure important. More important receiver's input linearity (IP3) handle high-power man-made noise intermodulation signals.Very important bandwidth used modulation (min. bandwidth). Moving into microwave range will dramatically reduce man-made noise amount galactic noise becomes bottom-limiting factor. such high frequencies, atmospheric absorption caused water, oxygen other molecules causes excessive rising propagation losses. receiver's noise figure, gain narrow bandwidth become increasingly important with rising frequency.
Philips Manual Edition Appendix
Filters receiver rail
filters used their primary responsibilities are: band-pass filter front LNA, image frequency band rejection band-pass filter after LNA, image noise suppression filter circuit, selecting transmission channel filter baseband, selecting baseband relevant frequency spectrum. spectrum analyzers high-quality broadband short wave receivers, first (Yig-Filters SPA) above received spectrum. there used pass filter preventing front-end tuned tracking filters image rejection purpose. Practically independent front-end pre-selection filter, equivalent noise bandwidth determined filter bandwidth.
Relationships conversion distortion parameters
oIP3oPL1dB+10.63dB iIP3oIP3-Gain iPL1dBoPL1dB-Gain
offset factor 10.63dB slightly vary. other literature, 9.6dB quoted. Ref. preferred, because arithmetical detail explaining reason behind this value. oIP3 iIP3 oPL1 iPL1 Gain Output third order intercept point Input related third order intercept point Output gain compression point Input related gain compression point Gain
oIP3 typically used transmitter systems iIP3 typically used receiver systems
References -Performance cascaded blocks
[10] [14] [15] Besser Associates, Niehenke, Ph.D., Applied Techniques 2000 Thum/Wiesbeck/Kern, Stuttgart, 1997 Anritsu, Intermodulation (IMD) Measurements using 37300 Series Vector Network Analyzer, 11410-00257a.pdf Keng Leong Fong,Thesis, Design Optimization Techniques Monolythic Downconversion Mixers, University California, Berkley, 1997, thesis.pdf Halle Dissertation, Design characterization downconversion mixers on-chip calibration techniques monolithic direct conversion radio receivers, Helsinki University Technology, 2002, isbn9512261510.pdf U.L.Rohde, J.Whitaker,T.T.N. Bucher, Communications Receievres, Graw Hill, 1996 Noise Distortion Chain, Section 2.7, page 41.pdf Jin-Su High-Frequency Intermodulation Analysis Cascode amplifiers, Media Team Samsung Electronics, Kyunggi-Do, Korea, 9-4.pdf Philips Semiconductors, `2.4GHz Generic Front-End reference design', Edition Philips RF-Manual, Appendix Fix, March 2004 Bern University Applied Since, Prof. Dellsperger, HTA-BE, Elektronik Intermodulation, Dynamik, eq_IM.pdf
Philips Manual Edition Appendix
Introduction front-ends
continuous size reductions attractive pricing semiconductor devices, applications have become very popular past years. navigation system based measuring evaluating signals transmitted satellites. least active satellites necessary, distance 20200 above Earth's surface. satellites transmit their civilian-use signal simultaneously, down users 1575.42 so-called microwave L-band. Each satellite (Coarse Acquisition) code. This satellite identifier code Pseudo Random appears like Noise frequency spectrum (=PRN code).The carrier BPSK (Binary Phase Shift Keying) modulated data code, navigation data message encrypted P(Y)-code. C/A's modulation, carrier DSSS modulated (Direct Sequence Spread Spectrum modulation).This DSSS spreads former bandwidth signal satellite internal limited width MHz. receiver must know code each satellite selecting antenna's spectrum. Because satellite selected using identification code, CDMA system (Code Division Multiple Access).This signal transmitted with enough power ensure minimum signal power level -160 Earth's surface.The absolute minimum receiver bandwidth MHz.
Antenna Discrete generic front-end
Satellite
Application
RF-IC FRONT-END
INTERFACE
BASEBAND EARTH
Satellite
IONOSPHAERE
Satellite
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carrier based system uses: CDMA DSSS BPSK modulation Available carrier frequencies Link carrier frequency 1575.42 Link carrier frequency 1227.6 Link carrier frequency 1381.05 Link carrier frequency 1379.913 Link carrier frequency 1176.45 U.S. navigation system, GPS, originally started U.S. military 1979. will updated supply carriers increased performance civil applications, while still providing standard carrier. uses BPSK modulation carrier and, beginning with launch modernized Block IIR, also carrier.The signal that will appear with Block satellites 2006, will QPSK modulation (Quadrature Phase Shift Keying).
Performance overview current up-coming systems:
Topic
Today: basic positioning
Used Codes
Need second reference base station
Resolution Before 2000: 25-100m Today 6-10m (resolution controlled 1-5m
Comments
Code
Tomorrow: basic positioning Today: advance positioning Tomorrow: advanced positioning
Code Code Code Code Carrier Carrier Data Link Code Carrier Code Carrier Code Carrier Data Link
Eliminates need costly DGPS many non-safety applications. max. distance reference 10km max. distance reference 100km; faster recovery following signal interruption
Philips Manual Edition Appendix
LOSS TRANSMISSION MEDIUM Pant GANT
PLNA Satellite #1.n GLNA Pant PLNA Pant Gant PLNA GLNA FRONT
INTERFACE
BASEBAND
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spread-spectrum modulated signal's field strength very weak causes negative receiver input circuit caused Nyquist noise determined analog front-end bandwidth:
Satellite Generation II/IIA/IIR IIR-M/IIF
Channe
Loop peek -158.5dBW -164.5dBW -158.5dBW -160.0dBW
Competition satellite-based navigation systems:
2004, European navigation system EGNOS started. News forecasted European system Galileo 2008. GLONASS Russian Navigation System.
Comparison front-ends used GLONASS receiver:
satellites same frequency 1575.42MHz, different codes, single front-end used.To achieve better coverage accelerated operation, more than antenna used. this case, separate front-ends used. Using switches based Philips' PIN-diodes makes possible select antenna with best signal e.g. automotive applications, operation city. Each GLONASS satellite will different carrier frequency range 1602.5625 1615.5 MHz, with 562.5 spacing, with same spread code.The normal method receiving these signals uses several parallel working front-ends, perhaps with common first mixer, certainly with different final local oscillators mixers. Application examples: Personal Navigations Railroads Recreation, walking-tour shore drilling Satellite ops. ephemeris timing Surveying mapping Network timing, synchronization Fishing boating clocks <Alarm clocks?> Laptops palms Mobiles Child safety navigation systems Fleet management systems Telecom time reference Highway toll systems First-aid calls mobiles Market Applications
Tracking Machine control
lita
Survey Mapping
Consumer
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Philips Manual Edition Appendix
References:
Office Space Commercialization, United States Department Commerce U.S. Coast Guard Navigation Center Excellence NAVSTAR Global Positioning System NAVSTAR USER EQUIPMENT INTRODUCTION Royal school Artillery, Basic science technology section, BST, gunnery careers courses, NAVSTAR Global Positioning System
Simplified block diagram typical receiver analog front-end
RFamp RF(in)
BPrf
MIX1
MIX2
converter Digital
Sampler
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Typically, integrated double-superhet receiver technology used analog rail.The under sampling analog digital converter (ADC) integrated analog front-end with resolution bits. under sampling, acts third mixer down-converting into digital stream band. After this ADC, comes digital baseband processor. till this point, received satellite signals negative. baseband processor, digital signal parallel processed several correlators NAV-data code discriminators. During this processing, effective Nyquest bandwidth shrunk down Hertz. De-spreading decoding signal then creates positive SNR. Because typically, front-end produced highly integrated, low-power, relatively noisy semiconductor technology, there need external Low-Noise-Amplifier (LNA) combined with band-pass filters. Because available chipsets market differ their electrical performances like, gain, Noise Figure (NF), linearity sensitivity, two-stage discrete front-end amplifiers used.The numbers filters front-end vary with needs application's target environment, costs sizes. processed number carriers, well navigation accuracy, determines min. allowed bandwidth analog front-end rail. Philips Semiconductors offers MMICs with internal matches input output (I/O) without internal matching.The internal matched broadband MMICs typically need output inductor biasing decoupling capacitors amplifier I/O.The internal non-matched devices need matching network typically made lumped circuits L-arrangement.This gives additional selectivity. Another advantage this MMIC integrated temperature compensation contrast transistor. system, typically first amplifier's noise figure very important. example, BGU2003 SiGe MMIC offers both (NF+IP3) with good quality. silicon brother BGA2003 comes with lower chipsets that need high front-end gain made MMIC able BGM1011 BGM1013. two-stage design e.g. will BGA2001, BGA2011 eventually combined with BGA2748 BGA2715 BGA2717. Some examples configuration L1-carrier shown next tables.
Single front-end amplifier:
Amplifier 325W Gain 14dB IP3o(out) +24dBm Matching External 20dB 0.9dB +21dBm External 2003 14dB 1.1dB +21dBm External 1013 34dB 4.7dB +21dBm Internal 1011 35dB 4.7dB +20dBm Internal 410W 18dB 1.1dB +15dBm External 2011 12dB 1.5dB +10dBm External 2001 14dB 1.3dB +9.5dBm External 2003 14dB 1.8dB +9.2dBm External 2715 23.2dB 2.7dB +1dBm Internal 2748 21dB -1.6dBm Internal
Two-stage cascaded circuit front-end amplifier:
Stage Stage Cascaded Gain Cascaded Cascaded IP3o BFG325W BFU540 31dB 1.19dB +21dBm BFG410W BFU540 35dB 1.25dB +21dBm BFG410W BGU2003 29dB 1.32dB +21dBm BFU540 BFG410W 35dB 1.11dB +15dBm BFG325W BFG410W 29dB 1.28dB +15dBm BGA2011 BGA2011 21dB +10dBm BGU2003 BGA2001 25dB 1.5dB +9.5dBm BGA2011 BGA2715 32.2dB 2.5dB +1dBm BGA2003 BGA2715 34dB 2.6dB +1dBm BGA2011 BGA2748 30dB 2.2dB -1.6dBm
Note:
Gain=|S21|2; data 1.8GHz next approximated, found data sheet diagrams cascaded amplifier equations refer e.g. edition Manual appendix, 2.4GHz Generic Front-End reference design evaluated cascaded amplifier includes example interstage filter with insertion loss (NF=+3dB; IP3=+40dBm). MMICs: BGAxxxx, BGMxxxx, BGUxxxx Transistors: BFGxxx, BFUxxx
Philips Manual Edition Appendix
Philips Philips Semiconductors world's semiconductor suppliers, with manufacturing assembly sites sales organization that delivers countries. complete up-to-date list sales offices please visit website
www.semiconductors.philips.com
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights. date release: 2005 document order number: 9397 15125 Printed Netherlands
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