BISS loadswitch Rev. August 2009 Product data sheet General
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PBLS2001D
BISS loadswitch
Rev. August 2009 Product data sheet
General description
VCEsat Breakthrough Small Signal (BISS) transistor ResistorEquipped Transistor (RET) SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package.
Features
VCEsat (BISS) resistor-equipped transistor package threshold voltage compared MOSFET drive power required Space-saving solution Reduction component count
Applications
Supply line switches Battery charger switches High-side switches LEDs, drivers backlights Portable equipment
Quick reference data
Table Symbol VCEO RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) collector-emitter saturation resistance collector-emitter voltage output current bias resistor (input) bias resistor ratio -100 open base
Conditions open base
Unit
TR1; VCEsat transistor
TR2; resistor-equipped transistor VCEO R2/R1
1.54
2.86
Pulse test: 0.02
Semiconductors
PBLS2001D
BISS loadswitch
Pinning information
Table Pinning Description emitter base output (collector) (emitter) input (base) collector
sym036
Simplified outline
Symbol
Ordering information
Table Ordering information Package Name PBLS2001D SC-74 Description plastic surface mounted package; leads Version SOT457 Type number
Marking
Table Marking codes Marking code Type number PBLS2001D
Limiting values
Table Limiting values accordance with Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation Tamb
Conditions open emitter open base open collector
-0.3 -0.6
Unit
TR1; VCEsat transistor
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Table Limiting values .continued accordance with Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative Ptot Ptot output current peak collector current total power dissipation total power dissipation Tamb
Conditions open emitter open base open collector
+150 +150
Unit
TR2; resistor-equipped transistor
device
Tstg Tamb
storage temperature junction temperature ambient temperature
Device mounted Printed-Circuit Board (PCB), single-sided copper, tin-plated standard footprint. Device mounted PCB, single-sided copper, tin-plated, mounting collector 1cm2. Device mounted ceramic PCB, Al2O3, standard footprint.
Ptot
006aaa414
Tamb (°C)
Ceramic PCB, Al2O3, standard footprint PCB, mounting collector 1cm2 PCB, standard footprint
PBLS2001D_2
Power derating curves
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Thermal characteristics
Table Symbol device Rth(j-a) thermal resistance from junction ambient free
Thermal characteristics Parameter Conditions Unit
Device mounted PCB, single-sided copper, tin-plated standard footprint. Device mounted PCB, single-sided copper, tin-plated, mounting collector 1cm2. Device mounted ceramic PCB, Al2O3, standard footprint.
duty cycle Zth(j-a) 0.75 (K/W) 0.33 0.05 0.02 0.01
006aaa415
10-1 10-5
10-4
10-3
10-2
10-1
PCB, standard footprint
(PNP): Transient thermal impedance from junction ambient function pulse time; typical values
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Zth(j-a) (K/W) 0.75 0.33 0.05 0.02 0.01 10-5 10-4 10-3 10-2 10-1
006aaa463
PCB, mounting collector 1cm2
(PNP): Transient thermal impedance from junction ambient function pulse time; typical values
006aaa464
Zth(j-a) (K/W) 0.75 0.33 0.05 0.02 0.01 10-5
10-4
10-3
10-2
10-1
Ceramic PCB, Al2O3, standard footprint
(PNP): Transient thermal impedance from junction ambient function pulse time; typical values
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Characteristics
Table Characteristics Tamb unless otherwise specified Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain Conditions -100 -500 VCEsat collector-emitter saturation voltage -100 -500 -100 RCEsat VBEsat VBEon toff collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance -100 -100 IBon IBoff
-100 -200 -185 -0.95 -0.85
-0.1 -0.1 -0.1 -150 -300 -280 -1.1 -1.1 -1.1
Unit
TR1; VCEsat transistor
ICES IEBO
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Table Characteristics .continued Tamb unless otherwise specified Symbol ICBO ICEO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain collector-emitter saturation voltage Conditions 1.54 2.86 Unit TR2; resistor-equipped transistor
IEBO VCEsat VI(off) VI(on) R2/R1
off-state input voltage on-state input voltage bias resistor (input) bias resistor ratio collector capacitance
Pulse test: 0.02
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
1000
006aaa416
VCEsat -10-1
006aaa417
-10-2
-10-1
-102
-103 -104 (mA)
-10-3 -10-1
-102
-103 -104 (mA)
Tamb Tamb Tamb
IC/IB Tamb Tamb Tamb
(PNP): current gain function collector current; typical values
(PNP): Collector-emitter saturation voltage function collector current; typical values
006aaa419
-1.0 -0.8
006aaa418
-1.2 VBEsat -1.0
-0.8
-0.6
-0.6
-0.4
-0.4
-0.2 -10-1
-102
-103 -104 (mA)
-0.2 -10-1
-102
-103 -104 (mA)
Tamb Tamb Tamb
IC/IB Tamb Tamb Tamb
(PNP): Base-emitter voltage function collector current; typical values
(PNP): Base-emitter saturation voltage function collector current; typical values
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
-2.0 -1.6
006aaa420
-11.7 -10.4 -9.1 -7.8 -6.5 -5.2 -3.9
RCEsat
006aaa421
-1.2
-0.8
-2.6 -1.3
-0.4
10-1 -10-1
-102
-103 -104 (mA)
Tamb
IC/IB Tamb Tamb Tamb
(PNP): Collector current function collector-emitter voltage; typical values
(PNP): Collector-emitter saturation resistance function collector current; typical values
RCEsat
006aaa423
VCEsat -10-1
006aaa422
-10-2
-10-3 -10-1
-102
-103 -104 (mA)
10-1 -10-1
-102
-103 -104 (mA)
Tamb IC/IB IC/IB IC/IB
Tamb IC/IB IC/IB IC/IB
(PNP): Collector-emitter saturation voltage function collector current; typical values
(PNP): Collector-emitter saturation resistance function collector current; typical values
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
006aaa015
006aaa014
VCEsat (mV)
10-1
(mA)
(mA)
Tamb Tamb Tamb
IC/IB Tamb Tamb Tamb
(NPN): current gain function collector current; typical values
(NPN): Collector-emitter saturation voltage function collector current; typical values
006aaa017
VI(on)
006aaa016
VI(off)
10-1 10-1
(mA)
10-1 10-2
10-1
(mA)
Tamb Tamb Tamb
Tamb Tamb Tamb
(NPN): On-state input voltage function collector current; typical values
(NPN): Off-state input voltage function collector current; typical values
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Test information
input pulse (idealized waveform)
(100
Boff
output pulse (idealized waveform)
(100
006aaa266
BISS transistor switching time definition
(probe) oscilloscope
(probe) oscilloscope
mgd624
IBon IBoff open;
Test circuit switching times
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Package outline
index
0.95 Dimensions
0.40 0.25 0.26 0.10 04-11-08
Package outline SOT457 (SC-74)
Packing information
Table Packing methods indicated -xxx last three digits 12NC ordering code.[1] Type number PBLS2001D Package SOT457 Description pitch, tape reel; pitch, tape reel;
further information availability packing methods, Section normal taping reverse taping
Packing quantity 3000 -115 -125 10000 -135 -165
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Soldering
3.45 1.95
solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist
1.60 1.70 3.10 3.20
msc422
Dimensions
Reflow soldering footprint
5.30
solder lands 5.05 0.45 1.45 4.45 solder resist occupied area
1.40 4.30
msc423
Dimensions
Wave soldering footprint
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Revision history
Table Revision history Release date 20090827 Data sheet status Product data sheet Change notice Supersedes PBLS2001D_1 Document PBLS2001D_2 Modifications:
This data sheet changed reflect company name Semiconductors, including legal definitions disclaimers. changes were made technical content. Figure "Wave soldering footprint": updated Product data sheet
PBLS2001D_1
20050705
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
Product status[3] Development Qualification Production
Definition This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. term `short data sheet' explained section "Definitions". product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com.
13.2 Definitions
Draft document draft version only. content still under internal review subject formal approval, which result modifications additions. Semiconductors does give representations warranties accuracy completeness information included herein shall have liability consequences such information. Short data sheet short data sheet extract from full data sheet with same product type number(s) title. short data sheet intended quick reference only should relied upon contain detailed full information. detailed full information relevant full data sheet, which available request local Semiconductors sales office. case inconsistency conflict with short data sheet, full data sheet shall prevail.
damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights. Export control This document well item(s) described herein subject export control regulations. Export might require prior authorization from national authorities. Quick reference data Quick reference data extract product data given Limiting values Characteristics sections this document, such complete, exhaustive legally binding.
13.3 Disclaimers
General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental
13.4 Trademarks
Notice: referenced brands, product names, service names trademarks property their respective owners.
Contact information
more information, please visit: http://www.nxp.com sales office addresses, please send email salesaddresses@nxp.com
PBLS2001D_2
B.V. 2009. rights reserved.
Product data sheet
Rev. August 2009
Semiconductors
PBLS2001D
BISS loadswitch
Contents
13.1 13.2 13.3 13.4 Product profile General description. Features Applications Quick reference data. Pinning information Ordering information Marking Limiting values. Thermal characteristics. Characteristics Test information Package outline Packing information. Soldering Revision history Legal information. Data sheet status Definitions Disclaimers Trademarks Contact information. Contents
Please aware that important notices concerning this document product(s) described herein, have been included section `Legal information'.
B.V. 2009.
rights reserved.
more information, please visit: http://www.nxp.com sales office addresses, please send email salesaddresses@nxp.com Date release: August 2009 Document identifier: PBLS2001D_2
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