MMST5551 SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) F
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MMST5551
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
FEATURES
Power dissipation Pcm: (Tamb=25 Collector current Icm: Collector-base voltage V(BR)CBO: Operationg storage junction temperature range TJ,Tstg: +150
SOT-323
MECHANICAL DATA
Case: Molded plastic Epoxy: 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Weight: 0.006 gram
0.051(1.30) 0.047(1.20)
.040(1.01)
0.092(2.35) 0.089(2.25) 0.012(0.30)
MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
Ratings ambient temperature unless otherwise specified.
0.052(1.33) 0.050(1.27)
0.081(2.05) 0.077(1.95)
Dimensions inches (millimeters) MAXIMUM RATINGES unless otherwise noted RATINGS Zener Current Table "Characteristics" Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range SYMBOL TSTG VALUE +150 UNITS
ELECTRICAL CHARACTERISTICS 25oC unless otherwise noted CHARACTERISTICS Thermal Resistance Junction Ambient Max. Instantaneous Forward Voltage 10mA SYMBOL MIN. TYP. MAX. UNITS
Volts 2006-3
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic CHARACTERISTICS
Collector-Emitter Breakdown Voltage 1.0mAdc, Collector-Base Breakdown Voltage 100µAdc, Emitter-Base Breakdown Voltage 10µAdc, Collector Cutoff Current 120Vdc, Emitter Cutoff Current 3Vdc, V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO nAdc nAdc
Symbol
Unit
CHARACTERISTICS
Current Gain 1mAdc, 5Vdc) -10mAdc, 5Vdc) 50mAdc, 5Vdc) Collector-Emitter Saturation Voltage 10mAdc, 1mAdc) 50mAdc, 5mAdc) Base-Emitter Saturation Voltage 10mAdc, 1mAdc) 50mAdc, 5mAdc) VCE(sat) VBE(sat) 0.15
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product 10mAdc, 10Vdc, 100MHz) Output Capacitance 10Vdc, 1.0MHz) Noise figure 0.2mAdc, 5Vdc, 1.0kHz,Rg=10
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