MMST5401 SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) F
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MMST5401
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (PNP)
FEATURES
Power dissipation Pcm: (Tamb=25 Collector current Icm: -0.2 Collector-base voltage V(BR)CBO: -160 Operationg storage junction temperature range TJ,Tstg: +150
SOT-323
MECHANICAL DATA
Case: Molded plastic Epoxy: 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Weight: 0.006 gram
0.051(1.30) 0.047(1.20)
.040(1.01)
0.092(2.35) 0.089(2.25) 0.012(0.30)
MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
Ratings ambient temperature unless otherwise specified.
0.052(1.33) 0.050(1.27)
0.081(2.05) 0.077(1.95)
Dimensions inches (millimeters) MAXIMUM RATINGES unless otherwise noted RATINGS Zener Current Table "Characteristics" Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range SYMBOL TSTG VALUE +150 UNITS
ELECTRICAL CHARACTERISTICS 25oC unless otherwise noted CHARACTERISTICS Thermal Resistance Junction Ambient Max. Instantaneous Forward Voltage 10mA SYMBOL MIN. TYP. MAX. UNITS
Volts 2006-3
NOTES Valid provided that terminals kept ambient temperature.
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic CHARACTERISTICS
Collector-Emitter Breakdown Voltage -1.0mAdc, Collector-Base Breakdown Voltage -100µAdc, Emitter-Base Breakdown Voltage -10µAdc, Collector Cutoff Current -120Vdc, Emitter Cutoff Current -3.0Vdc, V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -150 -160 nAdc nAdc
Symbol
Unit
CHARACTERISTICS
Current Gain -1mAdc, -5Vdc) -10mAdc, -5Vdc) -50mAdc, -5Vdc) Collector-Emitter Saturation Voltage -10mAdc, -1mAdc) -50mAdc, -5mAdc) Base-Emitter Saturation Voltage -10mAdc, -1mAdc) -50mAdc, -5mAdc) VCE(sat) VBE(sat) -0.2 -0.5
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product -10mAdc, -10Vdc, 100MHz) Output Capacitance -10Vdc, 1.0MHz) Small-Signal Current Gain -1.0mAdc, -10Vdc, 1.0kHz) Noise figure -0.2mAdc, -5Vdc, 1.0kHz,Rg=10 NOTES Pulse Test: Pulse Width-300µs,Duty Cycle-2.0%
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