M3D302 PMEM4010ND transistor/Schottky diode module Product d

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

M3D302 PMEM4010ND transistor/Schottky diode module Product d

Datasheet Thumbnail

Top Searches for this datasheet

M3D302
PMEM4010ND transistor/Schottky diode module
Product data sheet Supersedes data 2002 2003
Semiconductors
Product data sheet
transistor/Schottky diode module
FEATURES total power dissipation High current capability Reduces required area Reduced pick place costs Small plastic package. Transistor: collector-emitter saturation voltage. Diode: Ultra high-speed switching Very forward voltage Guard ring protected.
handbook, halfpage
PMEM4010ND
PINNING emitter connected cathode anode base collector DESCRIPTION
APPLICATIONS DC/DC convertors Inductive load drivers General purpose load drivers Reverse polarity protection circuits. DESCRIPTION Combination transistor with VCEsat high current capability planar Schottky barrier diode with integrated guard ring stress protection SOT457 (SC-74) small plastic package. complement: PMEM4010PD.
Marking code:
MGU865
Fig.1 Simplified outline (SOT457) symbol.
2003
Semiconductors
Product data sheet
transistor/Schottky diode module
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL transistor VCBO VCEO VEBO IFSM Ptot Tstg Tamb Notes collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current junction temperature open emitter open base open collector half sinewave; JEDEC method Tamb note note PARAMETER CONDITIONS MIN.
PMEM4010ND
MAX.
UNIT
Schottky barrier diode continuous reverse voltage continuous forward current repetitive peak forward current junction temperature
Combined device total power dissipation storage temperature operating ambient temperature +150 +125
Device mounted printed-circuit board; single sided copper; tinplated; mounting collector cm2. Schottky barrier diodes thermal run-away considered, some applications reverse power losses significant part total power losses. Nomograms determination reverse power losses (AV) rating will available request. THERMAL CHARACTERISTICS SYMBOL Note Device mounted printed-circuit board; single sided copper; tinplated; mounting collector cm2. PARAMETER thermal resistance from junction ambient CONDITIONS free air; note VALUE UNIT
2003
Semiconductors
Product data sheet
transistor/Schottky diode module
ELECTRICAL CHARACTERISTICS Tamb unless otherwise specified. SYMBOL transistor ICBO ICEO IEBO collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain Tamb VCEsat collector-emitter saturation voltage VBEsat RCEsat VBEon base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency collector capacitance note note note 1000 Fig.7; note reverse current note note Fig.8; note Note Pulse test: 0.02. diode capacitance MHz; Fig.9 PARAMETER CONDITIONS MIN.
PMEM4010ND
TYP.
MAX.
UNIT
<220
Schottky barrier diode continuous forward voltage
2003
Semiconductors
Product data sheet
transistor/Schottky diode module
GRAPHICAL DATA
MHC077
PMEM4010ND
1000
MHC078
10-1
(mA)
10-1 10-1
(mA)
transistor; Tamb Tamb Tamb
transistor; Tamb Tamb Tamb
Fig.2
current gain function collector current; typical values.
Fig.3
Base-emitter voltage function collector current; typical values.
handbook, halfpage VCEsat (mV)
MHC079
handbook, halfpage RCEsat
MHC080
(mA)
10-1 10-1
(mA)
transistor; IC/IB Tamb Tamb Tamb
transistor; IC/IB Tamb Tamb Tamb
Fig.4
Collector-emitter saturation voltage function collector current; typical values.
Fig.5
Equivalent on-resistance function collector current; typical values.
2003
Semiconductors
Product data sheet
transistor/Schottky diode module
PMEM4010ND
MHC081
handbook, halfpage (mA)
MHC311
(MHz)
1000 (mA)
10-1
transistor;
Schottky barrier diode. Tamb Tamb Tamb
Fig.6
Transition frequency function collector current.
Fig.7
Forward current function forward voltage; typical values.
handbook, halfpage (µA)
MHC312
MHC313
(pF)
Schottky barrier diode. Tamb Tamb Tamb
Schottky barrier diode; MHz; Tamb
Fig.8
Reverse current function reverse voltage; typical values.
Fig.9
Diode capacitance function reverse voltage; typical values.
2003
Semiconductors
Product data sheet
transistor/Schottky diode module
APPLICATION INFORMATION
PMEM4010ND
Vout
CONTROLLER
MGU863 MDB577
Fig.10 DC/DC convertor.
Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode.
2003
Semiconductors
Product data sheet
transistor/Schottky diode module
PACKAGE OUTLINE
PMEM4010ND
Plastic surface mounted package; leads
SOT457
index
detail
scale
DIMENSIONS original dimensions) UNIT 0.013 0.40 0.25 0.26 0.10 0.95 0.33 0.23
OUTLINE VERSION SOT457
REFERENCES JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2003
Semiconductors
Product data sheet
transistor/Schottky diode module
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION
PMEM4010ND
This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com. DISCLAIMERS General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights. Export control This document well item(s) described herein subject export control regulations. Export might require prior authorization from national authorities. Quick reference data Quick reference data extract product data given Limiting values Characteristics sections this document, such complete, exhaustive legally binding.
2003
Semiconductors
Customer notification This data sheet changed reflect company name Semiconductors. changes were made content, except legal definitions disclaimers.
Contact information additional information please visit: http://www.nxp.com sales offices addresses send e-mail salesaddresses@nxp.com
B.V. 2009 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands 613514/02/pp10 Date release: 2003 Document order number: 9397 11317

M3D302 PMEM4010ND transistor/Schottky diode module Product d

Top Searches for this datasheet

Other recent searches