HMICSilicon Diode Switch with Integrated Bias Network Features Br

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HMICSilicon Diode Switch with Integrated Bias Network Features Br

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MASW-004102-12760
HMICSilicon Diode Switch with Integrated Bias Network Features
Broad Bandwidth Specified Usable Integrated Bias Network Insertion Loss High Isolation Rugged, Glass Encapsulated Construction Fully Monolithic
RoHS Compliant* 260°C Reflow Compatible
Rev.
Description
MASW-004102-12760 device SP4T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMIC(Heterolithic Microwave Integrated Circuit) process, Patent 5,268,310. This process allows incorporation silicon pedestals that form series shunt diodes vias imbedding them loss, dispersion glass. using small spacing between elements, this combination silicon glass gives HMIC devices loss high isolation performance with exceptional repeatability through millimeter frequencies. Large bond pads facilitate inductance ribbon bonds, while gold backside metallization allows manual automatic chip bonding 80/20 Au/Sn, 62/36/2 Sn/Pb/Ag solders electrically conductive silver epoxy.
Yellow areas denote wire bond pads
Parameter Operating Temperature Storage Temperature Junction Temperature Applied Reverse Voltage
Absolute Maximum -65oC +125oC -65oC +150oC +175oC +33dBm C.W. ±20mA
Applications
These high performance switches suitable multi-band ECM, Radar, instrumentation control circuits where high isolation insertion loss ratios required. With standard +5V/-5V, controlled diode driver, 80nS switching speeds achieved.
Incident Power Bias Current +25°C
Note: Maximum operating conditions combination power, D.C. bias temperature: +33dBm 15mA (per diode) @+85°C
Restrictions Hazardous Substances, European Union Directive 2002/95/EC.
ADVANCED: Data Sheets contain information regarding product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 considering development. Performance based target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment develop guaranteed. Visit www.macomtech.com additional data sheets product information. PRELIMINARY: Data Sheets contain information regarding product M/A-COM Technology Solutions under development. Performance based engineering tests. Specifications typical. Mechanical outline been fixed. Engineering samples and/or test data available. M/A-COM Technology Solutions Inc. affiliates reserve right make Commitment produce volume guaranteed. changes product(s) information contained herein without notice.
MASW-004102-12760
HMICSilicon Diode Switch with Integrated Bias Network MASW-004102-12760 (SP4T) Electrical Specifications TAMB +25oC, 20mA Bias current
Parameter Frequency 2GHz Insertion Loss 2GHz Isolation 2GHz Input Return Loss
Rev.
Minimum
Nominal 0.80 1.00 1.40
Maximum
Units
Switching Speed
Note:
1.Typical switching speed measured from detected signal driven compatible drivers using output spiking network, 560pF.
Operation MASW-004102-12760
Operation MASW Series switches achieved simultaneous application negative current loss port positive current remaining isolated switching ports Driver Connections table below. control currents should supplied constant current sources. insertion loss, -10mA bias results approximately -2V, Isolation ,+10mA yields approximately +0.9V respective bias nodes. backside area return ground plane.
Driver Connections
Control Level Current Port
-10mA +10mA +10mA +10mA
ADVANCED: Data Sheets contain information regarding product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 considering development. Performance based target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment develop guaranteed. Visit www.macomtech.com additional data sheets product information. PRELIMINARY: Data Sheets contain information regarding product M/A-COM Technology Solutions under development. Performance based engineering tests. Specifications typical. Mechanical outline been fixed. Engineering samples and/or test data available. M/A-COM Technology Solutions Inc. affiliates reserve right make Commitment produce volume guaranteed. changes product(s) information contained herein without notice.
Condition Output
J1-J2 Loss Isolation Isolation Isolation J1-J3 Isolation Loss Isolation Isolation J1-J4 Isolation Isolation Loss Isolation J1-J5 Isolation Isolation Isolation Loss
+10mA -10mA +10mA +10mA
+10mA +10mA -10mA +10mA
+10mA +10mA +10mA -10mA
MASW-004102-12760
HMICSilicon Diode Switch with Integrated Bias Network
Rev.
MASW-004102-12760 Typical Insertion Loss
Frequency (Ghz)
MASW-004102-12760 Typical Isolation
Frequency (GHz)
ADVANCED: Data Sheets contain information regarding product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 considering development. Performance based target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment develop guaranteed. Visit www.macomtech.com additional data sheets product information. PRELIMINARY: Data Sheets contain information regarding product M/A-COM Technology Solutions under development. Performance based engineering tests. Specifications typical. Mechanical outline been fixed. Engineering samples and/or test data available. M/A-COM Technology Solutions Inc. affiliates reserve right make Commitment produce volume guaranteed. changes product(s) information contained herein without notice.
MASW-004102-12760
HMICSilicon Diode Switch with Integrated Bias Network
Rev.
M4SW-004102-12760 Typical Return Loss
Input
Frequency (GHz)
MASW-004102-12760 Schematic
(Input Common Port)
Bias
ADVANCED: Data Sheets contain information regarding product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 considering development. Performance based target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment develop guaranteed. Visit www.macomtech.com additional data sheets product information. PRELIMINARY: Data Sheets contain information regarding product M/A-COM Technology Solutions under development. Performance based engineering tests. Specifications typical. Mechanical outline been fixed. Engineering samples and/or test data available. M/A-COM Technology Solutions Inc. affiliates reserve right make Commitment produce volume guaranteed. changes product(s) information contained herein without notice.
MASW-004102-12760
HMICSilicon Diode Switch with Integrated Bias Network
Rev.
MASW-004102-12760 Chip Outline Drawing1,2
INCHES
MILLIMETERS
Bond Pads (J1-J4) Bond Pads (B2-B5) Thickness
.085 .058 .106 .110 .048 .052 .007 .011 .033 .034 .057 .061 .077 .081 .046 .050 .024 .028 .007 .005 REF. .005 .005 REF. 0.005 REF.
2.17 2.27 2.69 2.79 1.22 1.32 0.17 0.27 0.85 0.86 1.46 1.56 1.96 2.06 1.18 1.28 0.61 0.71 .170 .120 REF. .125 .125 REF. 0.125 REF.
Notes:
ADVANCED: Data Sheets contain information regarding product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 considering development. Performance based target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment develop guaranteed. Visit www.macomtech.com additional data sheets product information. PRELIMINARY: Data Sheets contain information regarding product M/A-COM Technology Solutions under development. Performance based engineering tests. Specifications typical. Mechanical outline been fixed. Engineering samples and/or test data available. M/A-COM Technology Solutions Inc. affiliates reserve right make Commitment produce volume guaranteed. changes product(s) information contained herein without notice.
Topside backside metallization gold 2.5um thick typical. Yellow areas indicate wire bonding pads
MASW-004102-12760
HMICSilicon Diode Switch with Integrated Bias Network
Rev.
Wire/Ribbon Attachment Recommendations
Cleanliness
These chips should handled clean environment.
Wire Bonding
Thermosonic wedge wire bonding using 0.00025" 0.003" ribbon 0.001" diameter gold wire recommended. heat stage temperature 150oC force grams should used. Ultrasonic energy should adjusted minimum required achieve good bond. bond wires should kept short straight possible.
Mounting
HMIC switches have Ti-Pt-Au back metal. They mounted with gold-tin eutectic solder preform conductive epoxy. Mounting surface must clean flat.
Eutectic Attachment
80/20, gold-tin, eutectic solder preform recommended with work surface temperature 255oC tool temperature 265oC. When applied, tool temperature should 290oC. chip should exposed temperatures greater than 320oC more than seconds. more than three seconds should required attachment. Solders containing should used.
Epoxy Attachment
minimum amount epoxy should used. thin epoxy fillet should visible around perimeter chip after placement. Cure epoxy manufacturer's schedule (typically 125-150oC).
Ordering Information
Part Number MASW-004102-12760G Package Pack
ADVANCED: Data Sheets contain information regarding product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 considering development. Performance based target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment develop guaranteed. Visit www.macomtech.com additional data sheets product information. PRELIMINARY: Data Sheets contain information regarding product M/A-COM Technology Solutions under development. Performance based engineering tests. Specifications typical. Mechanical outline been fixed. Engineering samples and/or test data available. M/A-COM Technology Solutions Inc. affiliates reserve right make Commitment produce volume guaranteed. changes product(s) information contained herein without notice.

HMICSilicon Diode Switch with Integrated Bias Network Features Br

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