Boost chopper Fast Trench Field Stop IGBT® Power Module SENS VBUS

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Boost chopper Fast Trench Field Stop IGBT® Power Module SENS VBUS

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APTGT150DA120TG
Boost chopper Fast Trench Field Stop IGBT® Power Module
SENS VBUS
VCES 1200V 150A 80°C
Application motor control Switched Mode Power Supplies Power Factor Correction Features Fast Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design Lead frames power connections High level integration Internal thermistor temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant
0/VBU
VBUS
0/VBUS
VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C
Reverse Bias Safe Operating Area
300A 1150V
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
www.microsemi.com
APTGT150DA120TG
ratings 1200
Unit
July, 2006
APTGT150DA120TG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1200V 25°C 150A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 600V 150A Inductive Switching (125°C) ±15V VBus 600V 150A ±15V 125°C VBus 600V 150A 125°C
10.7 0.56 0.48
Unit
Chopper diode ratings characteristics
Symbol Characteristic VRRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C
1200
Unit
Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
150A
July, 2006 APTGT150DA120TG
150A 600V
di/dt =3000A/µs
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APTGT150DA120TG
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15 3952 Unit
Thermistor value
Thermistor temperature
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
0.18 0.34
Unit
°C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Heatsink
2500
Package outline (dimensions
application note APT0501 Mounting Instructions Power Modules www.microsemi.com
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APTGT150DA120TG
DIMENSIO MARKED OLERENCED
July, 2006
APTGT150DA120TG
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C TJ=125°C
Output Characteristics 125°C
=17V =13V VGE=15V
Transfert Characteristics Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
600V =15V 150A 125°C J=125°C J=25°C J=125°C
Energy losses Collector Current (mJ) Reverse Bias Safe Operating Area
Eoff 600V 125°C Eoff
1200 1500
GE=15V J=125°C RG=2.2
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.16 0.12 0.08 0.04 0.05 0.00001 0.0001 Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) IGBT
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APTGT150DA120TG
July, 2006
APTGT150DA120TG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
VCE=600V D=50% RG=2.2 =125°C Tc=75°C
Forward Characteristic diode
J=125°C J=125°C J=25°C
Hard switching
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.35 Thermal Impedance (°C/W) 0.25 0.15 0.05 0.05 0.0001 0.001 Single Pulse
Diode
0.00001
0.01
rectangular Pulse Duration (Seconds)
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT150DA120TG
July, 2006

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