OptiMOS®2 Power-Transistor Features N-channel, normal level Excel

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

OptiMOS®2 Power-Transistor Features N-channel, normal level Excel

Datasheet Thumbnail

Top Searches for this datasheet

IPB08CN10N IPI08CN10N IPP08CN10N
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) operating temperature Pb-free lead plating; RoHS compliant Qualified according JEDEC1) target application
Product Summary DS(on),max (TO263)
Ideal high-frequency switching synchronous rectification Type IPB08CN10N IPI08CN10N IPP08CN10N
Package Marking
PG-TO263-3 08CN10N
PG-TO262-3 08CN10N
PG-TO220-3 08CN10N
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 C=100 Pulsed drain current2) Avalanche energy, single pulse Reverse diode Gate source voltage3) Power dissipation Operating storage temperature climatic category; 68-1 D,pulse C=25 C=25 D=95 GS=25 D=95 DS=80 =100 A/µs, j,max=175 Value 55/175/56 kV/µs Unit
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case Thermal resistance, junction ambient (TO220, TO262, TO263) thJC thJA minimal footprint cooling area Values typ. max.
IPP08CN10N
Unit
Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=130 DS=100 GS=0 j=25 DS=100 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=0 GS=10 D=95 (TO263) GS=10 D=95 (TO220, TO262) Gate resistance Transconductance DS|>2|I DS(on)max, D=95
J-STD20 JESD22 figure Tjmax=150 duty cycle D=0.01 Vgs<-5V
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
IPP08CN10N
Unit max.
Values typ.
d(on) d(off) DD=50 GS=10 D=47.5 G=1.6 GS=0 DS=50
5010
6660 1010
plateau DD=50 GS=0 DD=50 D=95 GS=0
S,pulse
C=25 GS=0 F=95 j=25 R=50 F/dt =100 A/µs
figure gate charge parameter definition
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N
Power dissipation tot=f(T Drain current D=f(T GS10
IPP08CN10N
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
Max. transient thermal impedance thJC=f(t parameter:
thJC [K/W]
10-1
0.05 0.02
0.01 single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N
Typ. output characteristics D=f(V DS); j=25 parameter:
IPP08CN10N
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
DS(on)
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N
Drain-source on-state resistance DS(on)=f(T D=95 GS=10 Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
IPP08CN10N
1300
DS(on)
GS(th)
[°C]
[°C]
Typ. capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
Ciss
Coss
[pF]
Crss
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N
Avalanche characteristics AS=f(t AV); GS=25 parameter: j(start)
IPP08CN10N
Typ. gate charge GS=f(Q gate); D=95 pulsed parameter:
1000
[µs]
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
g(th)
[°C]
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N
PG-TO220-3: Outline
IPP08CN10N
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N IPP08CN10N
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N
PG-TO-263
IPP08CN10N
Rev. 1.05
page
2007-08-29
IPB08CN10N IPI08CN10N IPP08CN10N
Published Infineon Technologies 81726 Germany Infineon Technologies 2006. Rights Reserved. Attention please! information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office (www.infineon.com Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev. 1.05
page
2007-08-29
Rev. 1.05
page
2007-08-29
Rev. 1.05
page
2007-08-29
Rev. 1.05
page
2007-08-29

OptiMOS®2 Power-Transistor Features N-channel, normal level Excel

Top Searches for this datasheet

Other recent searches