IPP080N06N OptiMOS® Power-Transistor Features gate charge fa
|
|
|
Top Searches for this datasheet
IPB080N06N
IPP080N06N
OptiMOS® Power-Transistor
Features gate charge fast switching applications N-channel enhancement normal level operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary DS(on),max
SMDversion
Type
IPB080N06N
IPP080N06N
Package Marking
PG-TO263-3 080N06N
PG-TO220-3 080N06N
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 °C1) C=100 Pulsed drain current Avalanche energy, single pulse D,pulse C=25 °C2) D=80 GS=25 D=80 DS=48 =200 A/s, j,max=175 Value Unit
Reverse diode
kV/s
Gate source voltage Power dissipation Operating storage temperature climatic category; 68-1
C=25 55/175/56
Current limited bondwire; with thJC=0.7 chip able carry figure
Rev. 1.03
page
2007-08-29
IPB080N06N
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case version, device thJC thJA minimal footprint cooling area3) Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=150 DS=60 GS=0 j=25 DS=60 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=60 GS=10 D=80 GS=10 D=80 version Gate resistance Transconductance DS|>2|I DS(on)max, D=80 0.01 Values typ.
IPP080N06N
Unit max.
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Rev. 1.03
page
2007-08-29
IPB080N06N
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate charge threshold Gate drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
IPP080N06N
Unit max.
Values typ.
d(on) d(off) DD=30 GS=10 D=80 G=3.3 GS=0 DS=30
2600
3500
g(th) plateau DD=30 GS=0 DD=30 D=80 GS=0
S,pulse
C=25 GS=0 F=80 j=25 R=30 F/dt =100
0.91
figure gate charge parameter definition
Rev. 1.03
page
2007-08-29
IPB080N06N
Power dissipation tot=f(T Drain current D=f(T
IPP080N06N
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
limited on-state resistance
Max. transient thermal impedance thJC=f(t parameter:
thJC [K/W]
10-1
0.05 0.02
0.01
single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
Rev. 1.03
page
2007-08-29
IPB080N06N
Typ. output characteristics D=f(V DS); j=25 parameter:
IPP080N06N
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
DS(on)
5.5V
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev. 1.03
page
2007-08-29
IPB080N06N
Drain-source on-state resistance DS(on)=f(T D=80 GS=10 Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
IPP080N06N
1500
DS(on)
GS(th)
[°C]
[°C]
Typ. capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
175°C
Ciss
[pF]
Coss
25°C
Crss
10-1
Rev. 1.03
page
2007-08-29
IPB080N06N
Avalanche characteristics AS=f(t AV); GS=25 parameter: j(start)
IPP080N06N
Typ. gate charge GS=f(Q gate); D=80 pulsed parameter:
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
g(th)
[°C]
Rev. 1.03
page
2007-08-29
IPB080N06N
PG-TO-263-3 PG-TO-263
IPP080N06N
Rev. 1.03
page
2007-08-29
IPB080N06N
PG-TO220-3: Outline
IPP080N06N
Rev. 1.03
page
2007-08-29
IPB080N06N
IPP080N06N
Published Infineon Technologies 81726 Munich, Germany Infineon Technologies 2007. Rights Reserved. Legal disclaimer information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office (www.infineon.com Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev. 1.03
page
2007-08-29
Other recent searches
S6A380 - S6A380 S6A380 Datasheet
MK06-7-C - MK06-7-C MK06-7-C Datasheet
MIG75Q6CSB1X - MIG75Q6CSB1X MIG75Q6CSB1X Datasheet
MC100EP52 - MC100EP52 MC100EP52 Datasheet
MAX3275 - MAX3275 MAX3275 Datasheet
MAX3277 - MAX3277 MAX3277 Datasheet
MAX3274 - MAX3274 MAX3274 Datasheet
MAX3276 - MAX3276 MAX3276 Datasheet
H50C - H50C H50C Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
