IPI06CNE8N IPP06CNE8N OptiMOS®2 Power-Transistor Features N-

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

IPI06CNE8N IPP06CNE8N OptiMOS®2 Power-Transistor Features N-

Datasheet Thumbnail

Top Searches for this datasheet

IPB06CNE8N
IPI06CNE8N IPP06CNE8N
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) operating temperature Pb-free lead plating; RoHS compliant Qualified according JEDEC1) target application
Product Summary DS(on),max (TO263)
Ideal high-frequency switching synchronous rectification Type IPB06CNE8N IPI06CNE8N IPP06CNE8N
Package Marking
PG-TO263-3 06CNE8N
PG-TO262-3 06CNE8N
PG-TO220-3 06CNE8N
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 °C2) C=100 Pulsed drain current3) Avalanche energy, single pulse Reverse diode Gate source voltage4) Power dissipation Operating storage temperature climatic category; 68-1 D,pulse C=25 C=25 D=100 GS=25 D=100 DS=68 =100 A/µs, j,max=175 Value 55/175/56 kV/µs Unit
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction case Thermal resistance, junction ambient thJC thJA minimal footprint cooling area5)
Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=180 DS=68 GS=0 j=25 DS=68 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=0 GS=10 D=100 TO220, TO262 GS=10 D=100 TO263 Gate resistance Transconductance DS|>2|I DS(on)max, D=100
J-STD20 JESD22 Current limited bondwire; with thJC=0.7 chip able carry figure Tjmax=150 duty cycle D=0.01 Vgs<-5V
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
d(on) d(off) DD=40 GS=10 D=50 G=1.6 GS=0 DS=40
6950 1310
9240 1740
plateau DD=40 GS=0 DD=40 D=100 GS=0
S,pulse
C=25 GS=0 F=100 j=25 R=40 F/dt =100 A/µs
figure gate charge parameter definition
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
Power dissipation tot=f(T
Drain current D=f(T GS10
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
Max. transient thermal impedance thJC=f(t parameter:
0.05 0.02 0.01 single pulse
thJC [K/W]
10-1
10-3
10-5
10-4
10-3
10-2
10-1
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
Typ. output characteristics D=f(V DS); j=25 parameter:
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
DS(on)
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
Drain-source on-state resistance DS(on)=f(T D=100 GS=10
Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
1800
DS(on)
GS(th)
[°C]
[°C]
Typ. capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
Ciss
Coss
[pF]
Crss
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
Avalanche characteristics AS=f(t AV); GS=25 parameter: j(start)
1000
Typ. gate charge GS=f(Q gate); D=100 pulsed parameter:
1000
[µs]
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
g(th)
[°C]
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
PG-TO220-3: Outline
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
PG-TO262-3-1
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
PG-TO-263
Rev. 1.05
page
2008-06-23
IPB06CNE8N
IPI06CNE8N IPP06CNE8N
Published Infineon Technologies 81726 Munich, Germany 2008 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please
contact nearest Infineon Technologies Office (www.infineon.com).
Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev. 1.05
page
2008-06-23

IPI06CNE8N IPP06CNE8N OptiMOS®2 Power-Transistor Features N-

Top Searches for this datasheet

Other recent searches