IPI05CNE8N IPP054NE8N OptiMOS®2 Power-Transistor Features N-

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IPI05CNE8N IPP054NE8N OptiMOS®2 Power-Transistor Features N-

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IPB051NE8N
IPI05CNE8N IPP054NE8N
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) operating temperature Pb-free lead plating; RoHS compliant Qualified according JEDEC1) target application
Product Summary DS(on),max 263)
Ideal high-frequency switching synchronous rectification Type IPB051NE8N IPI05CNE8N IPP054NE8N
Package Marking
PG-TO263-3 051NE8N
PG-TO262-3 05CNE8N
PG-TO220-3 054NE8N
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 °C2) C=100 Pulsed drain current3) Avalanche energy, single pulse D,pulse C=25 D=100 GS=25 D=100 DS=68 =100 A/s, j,max=175 Value Unit
Reverse diode Gate source voltage Power dissipation Operating storage temperature climatic category; 68-1
kV/s
C=25 55/175/56
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction case Thermal resistance, junction ambient thJC thJA minimal footprint cooling area5)
Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=250 DS=68 GS=0 j=25 DS=68 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=0 GS=10 D=100 TO220, TO262 GS=10 D=100 TO263 Gate resistance Transconductance DS|>2|I DS(on)max, D=100
J-STD20 JESD22 Current limited bondwire; with thJC=0.5 chip able carry figure Tjmax=150 duty cycle D=0.01 Vgs<-5V
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
d(on) d(off) DD=40 GS=10 D=50 G=1.6 GS=0 DS=40
9090 1710
12100 2270
plateau DD=40 GS=0 DD=40 D=100 GS=0
S,pulse
C=25 GS=0 F=100 j=25 R=40 F/dt =100
figure gate charge parameter definition
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
Power dissipation tot=f(T
Drain current D=f(T
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
1000
Max. transient thermal impedance thJC=f(t parameter:
0.05 0.02 0.01
10-1
thJC [K/W]
10-2
single pulse
10-3 10-5 10-4 10-3 10-2 10-1
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
Typ. output characteristics D=f(V DS); j=25 parameter:
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
DS(on)
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
Drain-source on-state resistance DS(on)=f(T D=100 GS=10
Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
2500
DS(on)
GS(th)
[°C]
[°C]
Typ. capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
Ciss Coss
[pF]
Crss
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
Avalanche characteristics AS=f(t AV); GS=25 parameter: j(start)
1000
Typ. gate charge GS=f(Q gate); D=100 pulsed parameter:
1000
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
g(th)
[°C]
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
PG-TO220-3: Outline
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
PG-TO-263-3
Rev. 1.09
page
2007-08-29
IPB051NE8N
IPI05CNE8N IPP054NE8N
Published Infineon Technologies 81726 Munich, Germany Infineon Technologies 2007. Rights Reserved. Legal disclaimer information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office (www.infineon.com Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev. 1.09
page
2007-08-29

IPI05CNE8N IPP054NE8N OptiMOS®2 Power-Transistor Features N-

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