Plastic-Encapsulate Transistors TO-92 Features Capable

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Plastic-Encapsulate Transistors TO-92 Features Capable

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BC337-16/25/40 BC338-16/25/40
Plastic-Encapsulate Transistors
TO-92
Features
Capable 0.625Watts Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V(BC337) VCBO=30V(BC338)
Maximum Ratings
Operating temperature +150 Storage temperature +150
Electrical Characteristics Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) BC337 BC338 Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) BC337 BC338 Collector-Emitter Breakdown Voltage (IE=10µAdc, IC=0) Collector Cutoff Current BC337 (VCB=45Vdc,IE=0) (VCB=25Vdc,IE=0) BC338 Collector Cutoff Current (VCE=40Vdc,IB=0) BC337 BC338 (VCE=20Vdc,IB=0) Emitter Cutoff Current (VEB=4.0Vdc, IC=0) Current Gain (IC=300mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc,IB=50mAdc) Current-Gain-Bandwidth Product (VCE=5.0V, f=100MHz, IC=10mA) Classification hFE(1) Marking Code 100~250 -Vdc Units
CHARACTERISTICS
V(BR)CEO
V(BR)CBO
-0.1 µAdc µAdc
V(BR)EBO ICBO ICEO IEBO
µAdc
CHARACTERISTICS
hFE(2) VCE(sat) VBE(sat) -0.7 -Vdc
DIMENSIONS
SMALL SIGNAL CHARACTERISTICS
-MHz
CLASSIFICATION
160~400 250~630
INCHES .170 .170 .550 .010 .130 .010
.190 .190 .590 .020 .160 .104
4.33 4.30 13.97 0.36 3.30 2.44
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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Plastic-Encapsulate Transistors TO-92 Features Capable

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