TLE7189QK Automotive Power TLE7189QK Table Contents

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Data Sheet, Rev. 2.0, July 2009
TLE7189QK
Automotive Power
TLE7189QK
Table Contents
Table Contents
Table Contents 5.1.1 5.1.2 5.1.3 5.1.4 5.2.1 5.2.2 5.2.3 5.2.4 5.2.5 5.2.6 5.2.7 5.2.8 5.3.1 Overview Block Diagram Configuration Assignment TLE7189QK Definitions Functions. General Product Characteristics Absolute Maximum Ratings Functional Range Default State Inputs Description Electrical Characteristics MOSFET Driver Output Stages Operation Vs<12V Integrated Charge Pumps Sleep Mode Electrical Characteristics Protection Diagnostic Functions Short Circuit Protection Dead Time Shoot Through Protection Under Voltage Shut Down Over Voltage Shut Down Over Temperature Warning Check Pins Electrical Characteristics Shunt Signal Conditioning Electrical Characteristics
Application Description Layout Guide Lines Package Outlines Revision History
Data Sheet
Rev. 2.0, 2009-07-10
3-Phase Bridge Driver
TLE7189QK
Features
Overview
Compatible very ohmic normal level input N-channel MOSFETs frequency 30kHz Fulfils specification down 5.5V supply voltage Short circuit protection with adjustable detection level Three integrated current sense amplifiers 100% duty cycle sensitivity emission Control inputs with characteristics Separate input each MOSFET Separate source connection each MOSFET Integrated minimum dead time Shoot through protection Disable function sleep mode Detailed diagnosis Over temperature warning LQFP-64 package with exposed excellent cooling Green Product (RoHS compliant) (Automotive Electronics Council) qualified
PG-LQFP-64
supporting features: check: Over- under voltage check supply Test functions short circuit detection check High voltage rated inputs
Description TLE7189QK driver dedicated control external MOSFETs forming converter high current phase motor drives automotive sector. incorporates features like short circuit detection, diagnosis high output performance combines with typical automotive specific requirements like full functionality even battery voltages. high side side output stages powerful enough drive MOSFETs with 400nC gate charge with approx. 150ns fall rise times.
Type TLE7189QK Data Sheet
Package PG-LQFP-64
Marking TLE7189F Rev. 2.0, 2009-07-10
TLE7189QK
Block Diagram
Block Diagram
Charge Pump Under voltage det.
Charge Pump Under voltage det.
Floating driver Short circuit detection ERR1 ERR2 SCDL Diagnostic logic Under voltage Over voltage Overtemperature Short circuit Reset failure
Floating driver Short circuit detection
voltage check
Floating driver Short circuit detection
VS_OA
Floating driver Short circuit detection
VS_OA AGND ISP1 ISN1 ISP2 ISN2 ISP3 ISN3 Input control Shoot through protection dead time
Floating driver Short circuit detection
Floating driver Short circuit detection
AGND
Current sense OpAmp Bias reference buffer
Figure Data Sheet
Block Diagram Rev. 2.0, 2009-07-10
TLE7189QK
Configuration
Configuration
Assignment TLE7189QK
AGND
AGND
SCDL
ISN3
ISP3
ISN2 ISN1
ERR1 ERR2 PG-LQFP-64-6, -11.vsd
Figure Data Sheet
Configuration Rev. 2.0, 2009-07-10
TLE7189QK
Configuration
Definitions Functions.
Symbol ERR1 ERR2 VS_OA ISN1 Function Error signal Error signal terminal pump capacitor charge pump terminal pump capacitor charge pump terminal pump capacitor charge pump Voltage supply terminal pump capacitor charge pump Logic power ground Buffer capacitor charge pump Connection drain high side switches short circuit detection connected connected connected connected Output gate side switch Connection source side switch Logic power ground Connection source high side switch Output gate high side switch connected connected Buffer capacitor charge pump Output gate side switch Connection source side switch Output gate high side switch Connection source high side switch connected connected connected Output gate high side switch Connection source high side switch Logic power ground Output gate side switch connected connected Connection source side switch connected Voltage supply I-DC Link OpAmps voltage reference buffer input check Output OpAmp shunt signal amplification Input OpAmp shunt signal amplification Rev. 2.0, 2009-07-10
Data Sheet
TLE7189QK
Configuration Cooling Symbol ISP1 ISN2 ISP2 ISN3 ISP3 AGND AGND SCDL Function connected Input OpAmp shunt signal amplification Input bias reference amplifier Output bias reference amplifier Output OpAmp shunt signal amplification Input OpAmp shunt signal amplification connected Input OpAmp shunt signal amplification Output OpAmp shunt signal amplification Input OpAmp shunt signal amplification connected Input OpAmp shunt signal amplification Analog ground especially current sense OpAmps Analog ground especially current sense OpAmps Inhibit (active low) Input check test Input adjust short circuit detection level Enable (active high) Input side switch (active high) Input high side switch (active low) Input side switch (active high) Input high side switch (active low) Input side switch (active high) Input high side switch (active low) Should connected
pins Cooling should interconnected.
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
General Product Characteristics
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings voltages with respect ground, positive current flowing into (unless otherwise specified) Pos. Voltages 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 4.1.6 4.1.7 4.1.8 4.1.9 4.1.10 4.1.11 4.1.12 4.1.13 4.1.14 4.1.15 4.1.16 4.1.17 4.1.18 4.1.19 4.1.20 4.1.21 Supply voltage Supply voltage Parameter Symbol Limit Values Min. Max. 18.0 18.0 18.0 with tp<200ms with 10k2) with 1k2) Unit Conditions
-4.0 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -7.0 -9.0 -0.3 -0.3 -0.3 -5.0
Supply voltage Voltage range IHx, ILx, ENA, VDP1 Voltage range ERRx, VOx, VRI, VRO, VDP2
SCDL Voltage range ERRx, VRI, SCDL Voltage range Voltage range Voltage range VS_OA Voltage range Voltage range Voltage range Voltage range Voltage difference Gxx-Sxx Voltage range Voltage range Voltage range Voltage range Voltage range Voltage range Voltage range
VDP3
VINH VVS_OA VVDH1 VVDH2 VVDH3 VVDH4 VVDH5 VVDH6 VVDH7
RVDH=100; 200ms; RVDH=100; 1ms; VINH=low VINH=low;
5min;
VINH=low; 400ms; VINH=low; RVDH=100;
25°C; 1min;
4.1.22
Voltage range
VVDH8
-7.0
VINH=low; RVDH=100;
200ms;
4.1.23
Voltage range
VVDH9
-9.0
VINH=low; RVDH=100;
1ms;
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
General Product Characteristics Absolute Maximum Ratings (cont'd)1) voltages with respect ground, positive current flowing into (unless otherwise specified) Pos. 4.1.24 4.1.25 4.1.26 4.1.27 4.1.28 4.1.29 4.1.30 4.1.31 4.1.32 4.1.33 4.1.34 4.1.35 4.1.36 Parameter Voltage range Symbol -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 Limit Values Min. Max. Unit Conditions
VCL1 Voltage range CH1, VCH1 Voltage difference CH1-CL1 VCP1 Voltage range VCL2 Voltage range CH2, VCH2 Voltage range VCB2 Voltage difference CH2-CL2 VCP2 voltage difference between VVDHVS
tP<1µs; f=50kHz
Voltage range ISPx, ISNx Output current range Gate resistor Min. Voltage rating capacitor Min. Voltage rating capacitor
VISI IVOx VCCB2a VCCB2b
External components
20V; VINH=low
Temperatures 4.1.37 4.1.38 4.1.39 4.1.40 4.1.41 4.1.42 4.1.43
Junction temperature Storage temperature Lead soldering temperature (1/16'' from body) Peak reflow soldering temperature4) Junction case Resistivity5) Resistivity (charge device model)
Tstg Tsol Tref RthJC VESD VESD
Thermal Resistance Susceptibility
subject production test, specified design. after chip must replaced; resistor series High frequent transient ringing above 1MHz exceeding +/-2V allowed Reflow profile IPC/JEDEC J-STD-020C susceptibility according EIA/JESD 22-A 114B susceptibility according EIA/JESD 22-C
Note: Stresses above ones listed here cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Note: Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed continuous repetitive operation.
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
General Product Characteristics
Pos. 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5 4.2.6 4.2.7
Functional Range
Parameter Supply voltage Supply voltage Duty cycle
Symbol Min.
Limit Values Max.
Unit
Conditions
TA=25°C; t<1min
Total gate charge 400nC
frequency Quiescent current3) Quiescent current into Supply current
fPWM IQ_VDH
4.2.8
Supply current (device disabled ENA)
IVs(o)
4.2.9 4.2.10 4.2.11
Supply current VS_OA Current flowing into (device sleep mode) Current flowing into (device sleep mode) Voltage difference CB2-VDH Junction temperature
IVs_OA IVDH1 IVDH2
,VVDH<20 VVDH<20V; open fPWM=20kHz Qgate=170nC: 5.5V VS=5.5V. 20V; VSHx=0V VS=20V. 28V; VSHx=0V VVS_OA=4.8 5.2V VS=5.5V. 20V; VSHx=0V VS=5.5V. 20V; VS=VVDH=VSHx; VIHx=low
Operation mode
4.2.12 4.2.13
VCB2VDH
-0.3
proper start minimum Vs=6.5V required Duty cycle referred high side input command (IHx); duty cycles driven continuously fully operational total current consumption from power VDH)
Note: Within functional range operates described circuit description. electrical characteristics specified within conditions given related electrical characteristics table. Note: voltage difference between smaller than during normal operation, there risk that high side output switch without corresponding input signal. soon this supply voltage recovers input signal changes, output stage automatically aligned input again.
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
General Product Characteristics
Table
Default State Inputs
Default State Inputs State High High Typ. 1.4V Zero ampere equivalent Remark side MOSFETs High side MOSFETs Device/outputs disabled Device/outputs disabled Sleep mode,
Characteristic Default state left open -pull down) Default state left open pull Default state left open pull down) Default state left open pull Default state left open pull down) Default state SCDL SCDL left open internal voltage divider) Default State sense amplifier output (ISPx=ISNx=0V) Status Device Outputs when ENA=INH=high VCT=low1)
special start procedure required
Device active outputs 5.5.28V; check functional failure
Note: load condition "C=22nF; RLoad=1" paragraph "Electrical characteristics Dynamic characteristic" means that RLoad connected between output positive terminal negative terminal connected corresponding Sxx. voltage measured positive terminal Note: Within functional range operates described circuit description. electrical characteristics specified within conditions given related electrical characteristics table.
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Description Electrical Characteristics
5.1.1
Description Electrical Characteristics
MOSFET Driver Output Stages
side high side powerful push-pull output stages TLE7189QK floating blocks, each with source pin. This allows direct connection output stage source each single MOSFET, allowing perfect control each gate-source voltage even when 200A driven bridge with rise fall times clearly below 1µs. output stages have same output power thanks used charge pump principle they switched 30kHz. output stages powerful enough drive MOSFETs with 400nC gate charge with approx. 150ns fall rise times even MOSFETs with 200nC each with fall rise times approx. 150ns. Maximum allowed power dissipation, max. junction temperature capabilities charge pump limit higher frequencies. Each output stage short circuit detection block. more details about short circuit detection Chapter 5.2.1.
Vbat
Charge pump
Charge pump
UVLO
ERR1 +3.3V ERR2
Error logic Reset Power Reset Under voltage Over voltage Over temperature Short circuit+disable
Under voltage lock Level shifter
SCDL
lock unlock
Floating driver
short circuit filter Input logic shoot through protection dead time
Level shifter
Floating driver
Shuntx P-GND
Figure
Block Diagram Driver Stages including Short Circuit Detection
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Description Electrical Characteristics
5.1.2
Operation Vs<12V Integrated Charge Pumps
TLE7189QK provides feature tailored requirements automotive applications. Often operation application assured even supply voltage lower. Normally bridge driver provide such conditions clearly less than gate external MOSFETs, increasing their RDSon associated power dissipation. TLE7189QK charge pump circuitries external capacitors. operation charge pumps independent upon pulse pattern MOSFETs. output charge pumps regulated. first charge pump doubles supply voltage long below supply voltage above, charge pump regulates output typically. Above supply voltage, output voltage charge pump will increase linearly. Yet, output will exceed 25V. Charge pump regulated well pumped voltage Normally same voltage range. driver designed have significant different voltages compared This would lead reduced supply voltages high side output stages. Charge pump supplies side MOSFETS output stages side MOSFETs with sufficient voltage assure gate even supply voltage below 10V. Charge pump supplies output stages high side MOSFETs with sufficient voltage assure gate. addition, charge pump supplies most internal circuits driver including charge pump Output charge pump buffer capacitor which referenced GND. Charge pump supplies high side MOSFETs output stages high side MOSFETs with sufficient voltage assure high side MOSFET gate. Output charge pump buffer capacitor which referenced VDH. This concept allows drive external MOSFETs complete duty cycle range 100% without taking care about recharging bootstrap capacitors. This simplifies applications especially motor drives with block wise commutation. charge pumps only deactivated when device into sleep mode INH. size charge pump capacitors (pump capacitors well buffer capacitors CBx) varied between 4.7µF. Yet, larger capacitor values result higher charge pump voltages less voltage ripple charge pump buffer capacitors (which supply internal circuits well external MOSFETs, pls. above). Besides capacitance values buffer capacitors determines voltage ripple well. recommended buffer capacitors that have small ESR. Pls. also Chapter 5.1.3 capacitor selection.
5.1.3
Sleep Mode
When low, driver will sleep mode. switches complete supply structure device leads finally under voltage shut down complete driver. Enabling device with means switch supply structure. device will through power reset during wake recommended perform Reset after Wake remove possible signals; Reset performed keeping until charge pump voltages have ramped Enabling disabling with very fast. fast enable disable recommended. When TLE7189QK mode (INH low) when supply voltage available pin, then driver supplied, charge pumps inactive charge pump capacitors discharged. terminal buffer capacitor will decay GND. When battery voltage still applied terminal buffer capacitor buffer capacitor will slowly charged battery voltage, with reversed polarity compared polarity during regular operation. Hence, important buffer capacitor (CB2) that withstand both, during operation mode -VBAT during mode, e.g. ceramic capacitor. case load dump during mode, negative voltage across will clamped (CB2 referenced VDH).
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Description Electrical Characteristics
5.1.4
Electrical Characteristics
Electrical Characteristics MOSFET drivers Characteristics
20V, +150 fPWM 25kHz, voltages with respect ground, positive current flowing into (unless otherwise specified)
Pos. 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 Parameter level output voltage High level output voltage Symbol Min. Limit Values Typ. Max. Unit Conditions
VG_LL VG_HL1
High level output voltage, Side VG_HL2 High level output voltage, High Side VG_HL3 High level output voltage difference dVG_H Gate drive output voltage
VGS_D
5.1.7
Gate drive output voltage Tj=-40°C Tj=25°C Tj=150°C
VGS1
ILoad=30mA VS=8. 20V; ILoad=-2mA VS=5.5. ILoad=-2mA VS=5.5. ILoad=-2mA ILoad=-100mA; VS=20V VENA=low VVCT=high; 5.5V<VS<28V ILoad=10mA UVLO; VS<=5.5V; ILoad=2mA
5.1.8
Gate drive output voltage high side VGS2 Tj=-40°C Tj=25°C Tj=150°C Gate drive output voltage side
Over voltage VS=open VINH=low; ILoad=2mA Over voltage;
5.1.9 5.1.10
VGS3
ILoad=2mA
open;
Gate drive output voltage side1) VGS3
VS=open; VINH=low; IGLx=10µA
open; VS=open; VINH=low; IGLx=3µA
5.1.11
Gate drive output voltage side1) VGS3
5.1.12 5.1.13 5.1.14 5.1.15 5.1.16 5.1.17 5.1.18 5.1.19 5.1.20 5.1.21
level input voltage Ixx, VI_LL High level input voltage Ixx, VI_HL Input hysteresis IHx, ILx, Input hysteresis IHx, ILx, level input voltage High level input voltage pull resistor pull down resistor INH, pull down resistor Quiescent current
--0.75
dVI1 dVI2 VI_LL VI_HL RIHx RILx RINEN IQVDH
VS=5.5. VS=8.
VIHx<5.5V VILx<5.5V VINH; VENA<5.5V 25°C; VINH=low
Rev. 2.0, 2009-07-10
Data Sheet
TLE7189QK
Description Electrical Characteristics Electrical Characteristics MOSFET drivers Characteristics
20V, +150 fPWM 25kHz, voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. 5.1.22 5.1.23 Parameter Output bias current Output bias current Symbol Min. Limit Values Typ. -1.0 -1.0 Max. -0.3 -0.3 -1.6 -1.6 Unit Conditions
ISHx ISLx
VS=5.5.20V; VSHx=0.(VS+1) VS=5.5.20V; VSLx=0.7V
Electrical Characteristics MOSFET drivers Dynamic Characteristics
20V, +150 fPWM 25kHz, voltages with respect ground, positive current flowing into (unless otherwise specified)
Pos. 5.1.24 5.1.25 Parameter Fixed internal dead time Turn current, peak Symbol Min. Limit Values Typ. Max. Unit Conditions
IG(on)1
5.1.26
Turn current, peak
IG(on)2
5.1.27
Turn current, peak
IG(off)
5.1.28
Rise time (20-80%) -40°C 25°C 150°C Fall time (20-80%) -40°C 25°C 150°C Input propagation time (low Input propagation time (low off) Input propagation time (high Input propagation time (high off) Absolute input propagation time difference (all channels turn Absolute input propagation time difference (all channels turn off)
tG_rise
VGxx-VSxx=0V; VS=8.20V; CLoad=22nF; RLoad=1 VGxx-VSxx=0V; VS=5.5.8V; CLoad=22nF; RLoad=1 VGxx-VSxx=10V; VS=8.20V; CLoad=22nF; RLoad=1 CLoad=22nF; RLoad=1
5.1.29
tG_fall
CLoad=22nF; RLoad=1;
5.1.30 5.1.31 5.1.32 5.1.33 5.1.34 5.1.35
tP(ILN) tP(ILF) tP(IHN) tP(IHF) tP(an) tP(af)
CLoad=22nF; RLoad=1
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Description Electrical Characteristics Electrical Characteristics MOSFET drivers Dynamic Characteristics
20V, +150 fPWM 25kHz, voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. 5.1.36 5.1.37 5.1.38 5.1.39 5.1.40 Parameter Symbol Min. Absolute input propagation time tP(1hfln) difference (1channel high Absolute input propagation time tP(1lfhn) difference (1channel high Absolute input propagation time tP(ahfln) difference (all channel high Absolute input propagation time tP(alfhn) difference (all channel high Wake time; high Limit Values Typ. Max. Driver fully functional; VS=6.5.8V; VENA=low; CCPx=CCBx=4.7µF Driver fully functional; VS=8.20V; VENA=low; CCPx=CCBx=4,7µF Driver fully functional; VS=6.5.8V; VENA=low; CCPx=CCBx=4,7µF Driver fully functional; VS=8.20V; VENA=low; CCPx=CCBx=4,7µF Unit Conditions
CLoad=22nF; RLoad=1
tINH_Pen1
5.1.41
Wake time; high
tINH_Pen2
5.1.42
Wake time logic functions; tINH_log high
5.1.43
Wake time logic functions; tINH_log high
5.1.44 5.1.45 5.1.46 5.1.47 5.1.48
propagation time disable output stages propagation time disable output stages propagation time disable entire driver Supply voltage Wake Charge pump frequency
tINH_Pdi1 tINH_Pdi2 tINH_Pdi3 VVsWU
VS=5.5.8V VS=8.20V
diagnostic, OpAmp working
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
5.2.1
Protection Diagnostic Functions Short Circuit Protection
TLE7189QK provides short circuit protection external MOSFETs. monitoring drainsource voltage external MOSFETs. soon this voltage higher than short circuit detection limit, capacitor will charged. high side side output stage same half bridge same capacitor (see Figure This capacitor discharged permanently with current which about times smaller than charging current. This charging discharging ratio specified with help duty cycle where short detected detected. After delay about 12µs external MOSFETs will switched until driver reset pin. error flag set. drain-source voltage monitoring short circuit detection certain external MOSFET active soon corresponding input "on" dead time expired. short circuit detection level adjustable analogue manner voltage setting SCDL pin. There translation between voltage applied SCDL drain-source voltage limit. E.g. trigger circuit drain-source voltage, SCDL must well. drain-source voltage limit chosen between 2.5V. SCDL left open, short circuit detection level will internally specified value. case SCDL connected detection level low. SCDL connected 3.3V, detection level about 3.2V. TLE7189QK short circuit detection functionality tested setting SCDL voltages lower than 0.4V, switching side MOSFETs switching more high side MOSFETs. this test, short circuit will detected even without current external MOSFET (VDH-SHx VTSCD1). This test function used well detect open pin. open during this test, error will reported. setting SCDL will disable short circuit protection function.
5.2.2
Dead Time Shoot Through Protection
bridge applications assured that external high side side MOSFETs "on" same time, connecting directly battery voltage GND. dead time generated TLE7189QK fixed minimum value. This function assures minimum dead time input signals coming from faulty. exact dead time bridge usually controlled generation unit addition this dead time, TLE7189QK provides locking mechanism, avoiding that both external MOSFETs half bridge switched same time. This functionality called shoot through protection. command switch both high side switches same half bridge given input pins, command will ignored. conflicting input signals will generate error message.
5.2.3
Under Voltage Shut Down
TLE7189QK integrated under voltage shut down, assure that behavior device predictable voltage ranges. voltage charge pump buffer capacitors reaches under voltage shut down level minimum specified filter time, gate-source voltage external MOSFETs will actively pulled low. this situation short circuit detection this output stage deactivated avoid latching shut down driver. soon charge pump buffer voltage recovers, output stage condition will aligned input patterns automatically.This allows continue operation motor case under voltage shut down without reset
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Under voltage shut down will occur when 250nC, fPWM 25kHz, charge pump capacitors
5.2.4
Over Voltage Shut Down
TLE7189QK integrated over voltage shut down avoid destruction high supply voltages.The voltage measured pin. When them them exceed over voltage shut down level more than specified filter time then external MOSFETs switched off. addition, over voltage will shut down charge pumps will discharge charge pump capacitors. This results under voltage condition which will indicated ERRx pins. During over voltage shut down external MOSFETs charge pumps remain until reset performed.
5.2.5
Over Temperature Warning
junction temperature exceeding typ. 155°C error signal given warning. driver will continue operate order disturb application. warning removed automatically when junction temperature cooling down. responsibility user protect device against over temperature destruction.
5.2.6
Check
assure high level system safety, TLE7189QK provides check. 5.0V system supply connected VS_OA checked internally monitoring over- under voltage. internal filter time integrated avoid faulty triggering. check active when signal high inactive when signal (=driver disabled). case under- over voltage VS_OA, check will disable driver latched. restart output stages, reset performed with pin. decides about over voltage under voltage detection level.
5.2.7
Pins
TLE7189QK status pins provide diagnostic feedback outputs these pins push pull stages, they either High Low. Table High High High High High Table Overview error conditions High High High High ERR1 High High High ERR2 High High High Driver conditions Under voltage check error Over temperature over voltage Short circuit detection errors observed errors will reported (except warning undervoltage shutdown) output tristate secured pull down
Behavior different error conditions restart behavior Auto restart Shuts down. external Power -MOSFETs Latch, reset must performed external Power -MOSFETs Latch, reset must performed external Power -MOSFETs
Error condition Short circuit detection Under voltage Over voltage
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Error condition check
restart behavior
Shuts down. Nothing
Over temperature warning Self clearing
Latch, reset must performed external Power -MOSFETs
Note: errors lead sleep mode. Sleep mode only initiated with pin. latch restart behavior allows distinguish between different error types combined signals. Table Priority Priorisation Errors Error check Short circuit detection Under voltage detection Over voltage detection Over temperature
Reset ERROR registers Disable TLE7189QK reseted with help enable ENA. pulled specified minimum time, error registers cleared external MOSFETs switched actively. During disable only errors under voltage shut down over temperature warning shown. Other errors displayed.
5.2.8
Electrical Characteristics
Electrical Characteristics Protection diagnostic functions
20V, +150 voltages with respect ground, positive current flowing into (unless otherwise specified)
Pos. Parameter Symbol Min. Over temperature 5.2.1 5.2.2 Over temperature warning Hysteresis over temperature warning Limit Values Typ. Max. Unit Conditions
Tj(OW) dTj(OW)
Short circuit detection 5.2.3 5.2.4 Filter time short circuit protection tSCP(off) Maximum duty cycle SCD1) Default
DSCDmax
fPWM=100kHz
static applied
5.2.5
minimum duty cycle periodic SCD1) Voltage range VSCD adjust limit Short circuit detection level
DSCDmin
fPWM=100 static applied
Short circuit detection active Short circuit detection active
5.2.6 5.2.7
VSCDLa1 VSCDLa2
2.64
3.63
VSCDL=3.3V
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Electrical Characteristics Protection diagnostic functions (cont'd)
20V, +150 voltages with respect ground, positive current flowing into (unless otherwise specified)
Pos. 5.2.8 Parameter Short circuit disable voltage VSCD Accuracy (VSCDL /VDS(off)) Accuracy (VSCDL /VDS(off)) SCDL pull resistor SCDL pull down resistor SCDL default voltage SCDL voltage test activation Filter time test activation VDH-SHx voltage detection test mode VDH-SHx voltage with detection test mode High level output voltage ERRx level output voltage ERRx pull down resistor Symbol Min. Limit Values Typ. Max. Short circuit detection disabled Unit Conditions
VSCDL(dis)
5.2.9 5.2.10 5.2.11 5.2.12 5.2.13 5.2.14 5.2.15 5.2.16 5.2.17
ASC(off)1 ASC(off)2 RSCDU RSCDD VSCDLop VSCDT tSCDT VTSCD1 VTSCD2
0.85
1.15 -350
VSCDL(off)
2.5V
VSCDL(off) 0.7.
tested tested Open
Test short circuit detection
pins 5.2.18 5.2.19 5.2.20 5.2.21
VOHERR VOLERR RERR
-0.1
ILoad= -0.2mA ILoad= 0.2mA VERR<5.5V; VINH=low
Propagation time difference ERR1 tPD(ERR) ERR2 Over voltage shut down Over voltage shut down Over voltage filter time Under voltage shut down Under voltage shut down Hysteresis under voltage shut down Under voltage filter time Reset time clear registers time signal without reset
Over- under voltage 5.2.22 5.2.23 5.2.24 5.2.25 5.2.26 5.2.27 5.2.28
VOV(off) VOV(off) VUV1 VUV2 VHUV1,2
32.7
Enable reset 5.2.29 5.2.30
tRes1 tRes0
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Electrical Characteristics Protection diagnostic functions (cont'd)
20V, +150 voltages with respect ground, positive current flowing into (unless otherwise specified)
Pos. 5.2.31 5.2.32 Parameter Symbol Min. propagation time (for enable tPENA disable) Return time normal operation auto-restart Limit Values Typ. Max. Unit Conditions
Check 5.2.33 5.2.34 5.2.35 5.2.36 5.2.37 5.2.38 5.2.39 5.2.40
VVCU Over voltage detection level VVCOl Over voltage detection level VVCOh Over- under voltage filter time level input voltage VVCT_LL High level input voltage VVCT_HL RVCT pull resistor tVCT Filter time test
Under voltage detection level
VVCT=low VVCT=low VVCT=high
VVCT<5.5V
Parameters describe behavior internal circuit. Therefore only internal delay times considered. application dead-/ delay times determined application circuit (switching times MOSFETs, adjusted dead time) have considered well.
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Shunt Signal Conditioning
TLE7189QK incorporates three fast precise operational amplifiers conditioning amplification shunt signals sensed three phases. Additionally, reference bias buffer integrated provide adjustable bias reference three OpAmps. voltage divider should less than filtering capacitor less than needed all. gain OpAmps adjustable external resistors within range When VISP VISN, provides reference voltage VVRO. VVRO normally half regulated voltage provided from external voltage regulator used read current sense signal. additional buffer allows bi-directional current sensing permits adaptation reference bias different voltages. reference buffer assures stable reference voltage even high frequency range. reference bias buffer used OpAmps. OpAmps TLE7189QK demonstrate offset voltages very little drift over temperature, thus allowing accurate phase current measurements.
3.3V CVRI needed) RVRI kOhm RVRI CVRI RVRI
Adjustable bias reference
Bias
Reference
ISP1 I-DC Link OpAmp1
TLE7189
I-DC Link OpAmp2
I-DC Link OpAmp3
ADCs
Figure
Shunt Signal Conditioning Block Diagram
Data Sheet
Dependent customer specific requirements additional filtering necessary
ISN1 ISP2 ISN2
Shunt
ISP3 ISN3
Rev. 2.0, 2009-07-10
TLE7189QK
5.3.1
Electrical Characteristics
Electrical Characteristics Current sense signal conditioning
20V, VVSOA +150 fPWM 25kHz, voltages with respect ground, positive current flowing into (unless otherwise specified)
Pos. 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.3.7 Parameter Series resistors Resistor ratio (gain ratio) Resistor ratio (gain ratio) Input differential voltage (ISPx ISNx) Input voltage (Both Inputs GND) (ISP GND) (ISN -GND) Input voltage (Both Inputs GND) (ISP GND) (ISN -GND) Symbol Min. Limit Values Typ. Max. 1000 2200 1500 1.28
200pF
Unit
Conditions
RRfb/RRS1 RRfb/RRS2 VIDR VLL1 VLL2
-800 -800 -800 -1.58
VS=8
Input offset voltage I-DC link VIO1 OpAmp, including drift over temperature range Input offset voltage reference buffer input range Input bias current Input bias current reference buffer High level output voltage level output voltage Output voltage
RRS=500; VCM=0V; VO=1.65V; VRI=1.65V
5.3.8 5.3.9 5.3.10 5.3.11 5.3.12 5.3.13 5.3.14
VIO2 IIBRB CMRR
-300 -0.1 1.623
1.65
1.668
VCM=0V; VO=open VRI=1.65V VRI=1.2 2.6V; IOH=-3mA; VRI=1.2 2.6V; IOH=3mA VIN(SS)=0V;
Gain=15; VRI=1.65V
5.3.15 5.3.16 5.3.17 5.3.18
Output short circuit current Differential input resistance
10kHz
Common mode input capacitance Common mode rejection ratio CMRR 20*Log((Vout_diff/Vin_diff) (Vin_CM/Vout_CM))
5.3.19
Common mode suppression2) with 20*Log(Vout_CM/Vin_CM) Freq =100kHz Freq 1MHz Freq 10MHz
VIN=360mV*
sin(2**freq*t);
RRS=500; RRfb=7500; VVRI=1.65, 2.5V
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Electrical Characteristics Current sense signal conditioning (cont'd)
20V, VVSOA +150 fPWM 25kHz, voltages with respect ground, positive current flowing into (unless otherwise specified)
Pos. 5.3.20 Parameter Slew rate Symbol Min. Limit Values Typ. Max. V/µs Gain>= RLoad=1.0k; CLoad=500pF Unit Conditions
5.3.21 5.3.22 5.3.23
Large signal open loop voltage gain (DC) Unity gain bandwidth Phase margin1)
RLoad=1k; CLoad=100pF
Gain>= RLoad=1k; CLoad=100pF
5.3.24 5.3.25
Gain margin1) Bandwidth
RLoad=1k; CLoad=100pF
Gain=15; RLoad=1k; CLoad=500pF; Rs=500 Gain=15; RLoad=1k; CLoad=500pF; 0.2<VVO< 4.0V; RRS=500
5.3.26 5.3.27 5.3.28
Output settle time Output rise time Output fall time
tset tIrise tIfall
subject production test; specified design Without considering offsets such input offset voltage, internal miss match assuming tolerance error external resistors.
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Application Description
Application Description
automotive sector there more more applications requiring high performance motor drives, such electro-hydraulic electric power steering. these applications phase motors, synchronous asynchronous, used, combining high output performance, space requirements high reliability.
Reverse polarity switch S=12V xxxx P-GND
RVDH V_Bridge VS_OA
SCDL CCB2 ceramic V_Bridge CCP1 and/or System ASIC CCB1 2.2µF 4.1.2: pump capacitors 4.7µF
TLE7189
RERR RERR ERR1 ERR2 ISN3 ISN2 ISN1 ISP3 ISP2 ISP1
Shunt
capacitors shunt signal conditioning only additional filtering desired
max. Ratings
P-GND
Figure
Application Circuit TLE7189QK
Note: This very simplified example application circuit. function must verified real application. Data Sheet Rev. 2.0, 2009-07-10
TLE7189QK
Application Description
Layout Guide Lines
Please refer also simplified application example. Three separated bulk capacitors should used half bridge Three separated ceramic capacitors should used half bridge Each bulk capacitors each ceramic capacitors should assigned half bridges should placed very close components within half bridge should placed close each other: high side MOSFET, side MOSFET, bulk capacitor ceramic capacitor parallel) shunt resistor form loop that should small tight possible. traces should short wide three half bridges separated; yet, when there common referenced shunt resistor three half bridges sources three side MOSFETs should close each other close common shunt resistor sense used short circuit detection; should routed (via Rvdh) common point drains high side MOSFETs sense voltage present drain high side buffer capacitor charge pump negative terminal should routed common point drains high side MOSFETs well this connection should inductive resistive Additional snubber circuits series) placed attenuate/suppress oscillations during switching MOSFETs, there snubber circuits half bridge, (several Ohm) (several must inductive terms routing packaging (ceramic capacitors) exposed backside LQFP recommended connect
Data Sheet
Rev. 2.0, 2009-07-10
TLE7189QK
Package Outlines
Package Outlines
0.1±0.05 STAND ±0.05 MAX.
+0.0 0.15 -0.0
±0.15
-0.03
+0.07
0.08 SEATING COPLANARITY PLANE 0.08
Bottom View
(By) Solder Area Exposed Diepad
Index Marking Exposed Diepad Dimensions Package Leadframe PG-LQFP-64-17 C66065-A6866-C017
Index Marking ±0.1 (By)
0°.7°
Does include plastic metal protrusion 0.25 max. side
PG-LQFP-64-17-PO
GPS09181
Figure
PG-LQFP-64-17
Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020).
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Dimensions Rev. 2.0, 2009-07-10
TLE7189QK
Revision History
Version V2.0
Revision History
Date 2009-07 Changes
Data Sheet
Rev. 2.0, 2009-07-10
Edition 2009-07-10 Published Infineon Technologies 81726 Munich, Germany 2009 Infineon Technologies Rights Reserved. Legal Disclaimer PRO-SILis Registered Trademark Infineon Technologies PRO-SILTrademark designates Infineon products which contain Supporting Features.SIL Supporting Features intended support overall System Design reach desired (according IEC61508) A-SIL (according ISO26262) level Safety System with high efficiency. respectively A-SIL certification such System reached system level System Responsible accredited Certification Authority. stands Safety Integrity Level (according 61508) A-SIL stands Automotive-Safety Integrity Level (according 26262) information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.

TLE7189QK Automotive Power TLE7189QK Table Contents

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