IPP070N06N IPI070N06N OptiMOS® Power-Transistor Features gat

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IPP070N06N IPI070N06N OptiMOS® Power-Transistor Features gat

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IPB070N06N
IPP070N06N IPI070N06N
OptiMOS® Power-Transistor
Features gate charge fast switching applications N-channel enhancement normal level operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary DS(on),max
SMDversion
Type
IPB070N06N
IPP070N06N
IPI070N06N
Type IPB066N06N Package IPP066N06N Marking
Package P-TO263-3 P-TO263-3-2 070N06N P-TO220-3-1
Marking P-TO220-3 066N06N 070N06N 066N06N P-TO220-3 070N06N
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 °C1) C=100 Pulsed drain current Avalanche energy, single pulse Reverse diode Gate source voltage Power dissipation Operating storage temperature climatic category; 68-1
Value
Unit
D,pulse
C=25 °C2) D=80 GS=25 D=80 DS=48 =200 A/µs, j,max=175
kV/µs
C=25
55/175/56
Current limited bondwire; with thJC=0.6 chip able carry figure
Rev.
page
2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction case version, device thJC thJA minimal footprint cooling area3) Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=180 DS=60 GS=0 j=25 DS=60 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=60 GS=10 D=80 GS=10 D=80 version Gate resistance Transconductance DS|>2|I DS(on)max, D=80 0.01
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Rev.
page
2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate charge threshold Gate drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
d(on) d(off) DD=30 GS=10 D=80 G=3.3 GS=0 DS=30
3100
4100 1100
g(th) plateau DD=30 GS=0 DD=30 D=80 GS=0
S,pulse
C=25 GS=0 F=80 j=25 R=30 F/dt =100 A/µs
0.95
figure gate charge parameter definition
Rev.
page
2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
Power dissipation tot=f(T
Drain current D=f(T GS10
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
limited on-state resistance
Max. transient thermal impedance thJC=f(t parameter:
thJC [K/W]
0.05
0.02 0.01 single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
Rev.
page
2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
Typ. output characteristics D=f(V DS); j=25 parameter:
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
DS(on)
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev.
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2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
Drain-source on-state resistance DS(on)=f(T D=80 GS=10
Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
1800
180µA
DS(on)
GS(th)
[°C]
[°C]
Typ. capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
Ciss
175°C
[pF]
Coss
25°C
Crss
10-1
Rev.
page
2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
Avalanche characteristics AS=f(t AV); GS=25 parameter: j(start)
Typ. gate charge GS=f(Q gate); D=80 pulsed parameter:
[µs]
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
g(th)
[°C]
Rev.
page
2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
PG-TO-263-3
Rev.
page
2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
PG-TO220-3: Outline
Rev.
page
2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
PG-TO262-3: Outline
Rev.
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2007-01-10
IPB070N06N
IPP070N06N IPI070N06N
Published Infineon Technologies 81726 Germany Infineon Technologies 2006. Rights Reserved. Attention please! information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties Information further information technology, delivery terms conditions prices please contact your neares Infineon Technologies Office (www.infineon.com Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev.
page
2007-01-10

IPP070N06N IPI070N06N OptiMOS® Power-Transistor Features gat

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