BTS5235-2G Smart High-Side Power Switch Automotive Power
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Data Sheet, Rev.1.1, 2008
BTS5235-2G
Smart High-Side Power Switch
Automotive Power
Smart High-Side Power Switch BTS5235-2G
Table Contents
Table Contents
5.1.1 5.1.2 5.1.3 5.1.4 Overview Block Diagram Terms Configuration Assignment BTS5235-2G Definitions Functions Electrical Characteristics Absolute Maximum Ratings Block Description Electrical Characteristics Power Stages Output On-State Resistance Input Circuit Inductive Output Clamp Electrical Characteristics Thermal Resistance Protection Functions Over Load Protection Reverse Polarity Protection Over Voltage Protection Loss Ground Protection Electrical Characteristics Diagnosis ON-State Diagnosis OFF-State Diagnosis Sense Enable Function Electrical Characteristics
Package Outlines BTS5235-2G Revision History
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch PROFET Channels,
BTS5235-2G
Overview
Very standby current compatible logic pins Improved electromagnetic compatibility (EMC) Stable behavior under voltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Optimized inverse current capability Green Product (RoHS compliant) Qualified
Basic Features
PG-DSO-20-43
Product Summary BTS5235-2G dual channel high-side power switch PG-DSO-20-43 package providing embedded protective functions. power transistor built N-channel vertical power MOSFET with charge pump. device monolithically integrated Smart SIPMOS technology.
Operating voltage Over voltage protection On-State resistance Nominal load current (one channel active) Current limitation Current limitation repetitive Standby current whole device with load
Vbb(on)
Vbb(AZ) RDS(ON)
IL(nom) IL(LIM) IL(SCr)
Ibb(OFF)
Type BTS5235-2G Data Sheet
Package PG-DSO-20-43
Marking BTS5235-2G Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Overview Protective Functions Reverse battery protection without external components Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart reduced current limitation Over voltage protection without external resistor Loss ground protection Electrostatic discharge protection (ESD)
Diagnostic Functions Enhanced IntelliSense signal each channel Enable function diagnosis pins (IS1 IS2) Proportional load current sense signal current source High accuracy current sense signal wide load current range Open load detection ON-state load current sense Over load (current limitation) diagnosis ON-state, signalling voltage source Latched over temperature diagnosis ON-state, signalling voltage source Open load detection OFF-state, signalling voltage source
Applications compatible high-side power switch with diagnostic feedback grounded loads types resistive, inductive capacitive loads Suitable loads with high inrush currents, lamps Suitable loads with currents, LEDs Replaces electromechanical relays, fuses discrete circuits
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Block Diagram
Block Diagram
BTS5235-2G dual channel high-side power switch (two times PG-DSO-20-43 package providing embedded protective functions. Enhanced IntelliSense pins provide sophisticated diagnostic feedback signal including current sense function, over load over temperature alerts ON-state open load alert OFF-state. diagnosis signals switched sense enable SEN. integrated ground resistor well integrated resistors each input (IN1, IN2, SEN) reduce external components minimum. power transistor built N-channel vertical power MOSFET with charge pump. inputs ground referenced CMOS compatible. device monolithically integrated Smart SIPMOS technology.
channel
load current sense clamp inductive load
internal power supply protection logic
gate control charge pump open load detection
multi step load current limitation OUT1
temperature sensor over load detection
channel
control protection circuit equivalent channel OUT2 RGND
Figure
Block Diagram
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Block Diagram
Terms
Following figure shows terms used this data sheet.
IIN1 VIN1 VIN2 VIS1 VIS2 IIN2 IIS1 IIS2 ISEN
VOUT1 OUT2 OUT2 IGND
Terms2ch.emf
OUT1
BTS5235-2G
VSEN
Figure
Terms
tables electrical characteristics valid: Channel related symbols without channel number valid each channel separately.
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Configuration
Configuration
Assignment BTS5235-2G
(top view)
OUT1 OUT1 OUT1 OUT2 OUT2 OUT2
Figure
Configuration PG-DSO-20-43
Definitions Functions
Symbol OUT1 OUT2
Function Input signal channel Input signal channel Diagnosis output signal channel Diagnosis output signal channel Sense Enable input channel Protected high-side power output channel Protected high-side power output channel Ground connection Positive power supply logic supply well output power supply connected
output pins each channel have connected pins have connected
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Electrical Characteristics
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings +150 voltages with respect ground, positive current flowing into (unless otherwise specified) Pos. Parameter Symbol Limit Values min. Supply Voltage 4.1.1 4.1.2 Supply voltage Supply voltage full short circuit protection (single pulse) (Tj(0) Voltage power transistor Supply Voltage Load Dump protection
Vbb(SC)
Unit Conditions
max.
4.1.3 4.1.4
Vbb(LD)
Power Stages 4.1.5 4.1.6 Load current Maximum energy dissipation single pulse
IL(LIM)
IL(0) Tj(0) Vbb=13,5V
4.1.7
Power dissipation (DC)
Ptot
Logic Pins 4.1.8 4.1.9 Voltage input Current through input
VSEN ISEN Tstg VESD
-2.0 -8.0 -2.0 -8.0
min.
min.
4.1.10 Voltage sense enable 4.1.11 Current through sense enable 4.1.12 Current through sense Temperatures 4.1.13 Junction Temperature 4.1.14 Dynamic temperature increase while switching 4.1.15 Storage Temperature Susceptibility 4.1.16 susceptibility
subject production test, specified design.
min.
min.
according EIA/JESD 22-A 114B
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Electrical Characteristics
describe complete circuit impedance including line, contact generator impedances Load Dump specified 7636, internal resistance Load Dump pulse generator Current limitation protection feature. Operation current limitation considered "outside" normal operating range. Protection features designed continuous repetitive operation. Pulse shape represents inductive switch off: IL(t) IL(0) tpulse); tpulse Device mounted 1.5mm epoxy, FR4) with copper heatsinking area (one layer, thick) connection. vertical without blown air.
Note: Stresses above ones listed here cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Note: Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed continuous repetitive operation.
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Block Description Electrical Characteristics
Block Description Electrical Characteristics
Power Stages
power stages built N-channel vertical power MOSFETs (DMOS) with charge pumps.
5.1.1
Output On-State Resistance
on-state resistance RDS(ON) depends supply voltage well junction temperature Figure shows that dependencies typical on-state resistance. behavior reverse polarity mode described Section 6.2.
13.5
RDS(ON)
RDS(ON)
Figure
Typical On-State Resistance
5.1.2
Input Circuit
Figure shows input circuit BTS5235-2G. There integrated input resistor that makes external components obsolete. current sink ground ensures that device switches case open input pin. zener diode protects input circuit against pulses.
RGND
Input.emf
Figure
Input Circuit (IN1 IN2)
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Block Description Electrical Characteristics high signal input causes power DMOS switch with dedicated slope, which optimized terms emission.
tOFF
VOUT
/dtON
/dtOFF
SwitchOn.emf
Figure
Switching Load (resistive)
5.1.3
Inductive Output Clamp
When switching inductive loads with high-side switches, voltage VOUT drops below ground potential, because inductance intends continue driving current.
OutputClamp.emf
Figure
Output Clamp (OUT1 OUT2)
prevent destruction device, there voltage clamp mechanism implemented that keeps that negative output voltage certain level (VOUT(CL)). Figure Figure details. Nevertheless, maximum allowed load inductance limited.
OUT(CL)
InductiveLoad.emf
Figure
Switching Inductance
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Block Description Electrical Characteristics Maximum Load Inductance While demagnetization inductive loads, energy dissipated BTS5235-2G. This energy calculated with following equation:
OUT(CL) OUT(CL) OUT(CL)
This equation simplifies under assumption
OUT(CL)
energy, which converted into heat, limited thermal design component. Figure maximum allowed energy dissipation.
13.5V 10000
1000
[mJ]
Figure
Maximum Energy Dissipation Single Pulse, Tj,Start
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Block Description Electrical Characteristics
5.1.4
Electrical Characteristics
Unless otherwise specified: +150 typical values: 13.5 Pos. Parameter General 5.1.1 Operating voltage Symbol Limit Values min. typ. max.
Unit Test Conditions
5.1.2 Operating current channel active channels active 5.1.3 Standby current whole device with load
IGND
Ibb(OFF)
VSEN °C1) 0.25
Output Characteristics 5.1.4 On-State resistance channel
RDS(ON)
5.1.5 Output voltage drop limitation small load VDS(NL) currents
IL(nom) 5.1.6 Nominal load current channel channel active channels active
5.1.7 Output clamp 5.1.8 Output leakage current channel 5.1.9 Inverse current capability Input Characteristics 5.1.10 Input resistor 5.1.11 L-input level 5.1.12 H-input level 5.1.13 L-input current 5.1.14 H-input current Timings 5.1.15 Turn-on time 5.1.16 Turn-off time
-0.3
13.5 13.5
VOUT(CL) IL(OFF) -IL(inv) VIN(L) VIN(H) IIN(L) IIN(H) tOFF
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Block Description Electrical Characteristics Unless otherwise specified: +150 typical values: 13.5 Pos. Parameter 5.1.17 slew rate 5.1.18 slew rate Symbol
dtON -dV/ dtOFF
Limit Values min. typ. 0.25 0.25 max.
Unit Test Conditions V/µs 13.5 V/µs 13.5
subject production test, specified design Device mounted 1.5mm epoxy, FR4) with copper heatsinking area (one layer, thick) connection. vertical without blown air. subject production test, parameters calculated from RDS(ON)
Note: Characteristics show deviation parameter given supply voltage junction temperature. Typical values show typical parameters expected from manufacturing.
Pos. 5.2.1 5.2.2
Thermal Resistance
Parameter Junction Case
Symbol Min.
Limit Values Typ. Max.
Unit
Conditions
Junction Ambient channel active channels active
RthJC RthJA
subject production test, specified design. Device mounted 1.5mm epoxy, FR4) with copper heatsinking area (one layer, thick) connection. vertical without blown air.
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Protection Functions
Protection Functions
device provides embedded protective functions. Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions neither designed continuous repetitive operation.
Over Load Protection
load current IOUT limited device itself case over load short circuit ground. There three steps current limitation which selected automatically depending voltage across power DMOS. Please note that voltage VDS. Please refer following figure details.
CurrentLimitation.emf
Figure
Current Limitation (minimum values)
Current limitation realized increasing resistance device which leads rapid temperature rise inside. temperature sensor each channel causes overheated channel switch prevent destruction. After cooling down with thermal hysteresis, channel switches again. Please refer Figure details.
IL(LIM) IL(SCr) tOFF(SC)
OverLoad .emf
Figure
Shut Down Over Temperature with Current Limitation
short circuit condition, load current initially limited IL(LIM). After thermal restart, current limitation level reduced IL(SCr). current limitation level reset IL(LIM) switching device (VIN
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Protection Functions
Reverse Polarity Protection
case reverse polarity, intrinsic body diode causes power dissipation. Additional power dissipated integrated ground resistor. following formula estimation total power dissipation Pdiss(rev) reverse polarity mode.
diss(rev)
channels
DS(rev)
reverse current through intrinsic body diode limited connected load. current through sense pins limited (please refer maximum ratings Page current through ground (GND) limited internally RGND. over-temperature protection active during reverse polarity.
Over Voltage Protection
addition output clamp inductive loads described Section 5.1.3, there clamp mechanism over voltage protection. Because integrated ground resistor, over voltage protection does require external components. shown Figure case supply voltages greater than Vbb(AZ), power transistor switches voltage across logic part clamped. result, internal ground potential rises Vbb(AZ). zener diodes, potential IN1, rises almost that potential, depending impedance connected circuitry.
ZDAZ
RSEN ZDESD
logic
internal ground
RGND
OverVoltage .emf
Figure
Over Voltage Protection
Loss Ground Protection
case complete loss device ground connections, connected load ground, BTS5235-2G securely changes stays state.
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Protection Functions
Electrical Characteristics
Unless otherwise specified: +150 typical values: 13.5 Pos. Parameter Over Load Protection 6.5.1 Load current limitation Symbol Limit Values min. typ. max.
Unit Conditions
IL(LIM)
Tj(SC) TjStart
6.5.2 Repetitive short circuit current limitation 6.5.3 Initial short circuit shut down time 6.5.4 Thermal shut down temperature 6.5.5 Thermal hysteresis Reverse Battery 6.5.6 Drain-Source diode voltage (VOUT Vbb)
IL(SCr) tOFF(SC) Tj(SC)
-VDS(rev)
-3.5 -13.5 -13.5
6.5.7 Reverse current through Ground Circuit 6.5.8 Integrated Resistor line Over Voltage 6.5.9 Over voltage protection Loss 6.5.10 Output leakage current while disconnected
-IGND RGND Vbb(AZ) IL(GND)
ISEN IGND
Please note that external forced must exceed |VOUT(CL)| subject production test, specified design Pins connected
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Diagnosis
Diagnosis
diagnosis purpose, BTS5235-2G provides Enhanced IntelliSense signal pins IS2. This means detail, current sense signal IIS, proportional signal load current (ratio kILIS IIS), provided long failure mode (see Table occurs. case failure mode, voltage VIS(fault) diagnosis pin.
Rlim RIN1
IIS1 gate control OUT1 latch over temperature over load
RSEN Rlim RIS1 RIS2 RIN2
open load IS(fault) VOUT(OL)
channel gate control IIS2
diagnosis
channel
OUT2 load
Sense.emf
Figure Table
Block Diagram: Diagnosis Truth Table1) Input Level Output Level Diagnostic Output
Operation Mode Normal Operation (OFF) Short Circuit Over Temperature Short Circuit Open Load Normal Operation (ON) Current Limitation Short Circuit Over Temperature Short Circuit Open Load
VOUT(OL) VOUT(OL)
~Vbb
VIS(fault)
~GND
VIS(fault) kILIS VIS(fault) VIS(fault) VIS(fault) kILIS
Level, High Level, high impedance, potential depends leakage currents external circuit
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Diagnosis
ON-State Diagnosis
standard diagnosis signal current sense signal proportional load current. accuracy ratio (kILIS IIS) depends temperature. Please refer following Figure details. Usually resistor connected current sense pin. recommended sense resistors typical value
8000 7000 6000 5000 kILIS 4000 3000 2000 1000
dummy 150°C dummy -40°C
Figure
Current sense ratio kILIS1)
Details about timings between diagnosis signal output voltage VOUT load current ON-state found Figure
normal operation over load (current limitation)
tsIS(ON)
tsIS(LC)
tsIS(OVL) VIS(fault)
SwitchOn .emf
Figure
Timing Diagnosis Signal ON-state
case over-load well over-temperature, voltage VIS(fault) diagnosis pins long according input high. This means, even overload disappears after first thermal shutdown when device keeps switching over-load condition (thermal toggling), diagnosis signal (VIS(fault)) constantly available. Please refer Figure details. Please note, that overload disappears before first thermal shutdown, diagnosis signal (VIS(fault)) remain approximately longer than duration overload.
curves show behavior based characterization data. marked points guaranteed this Data Sheet Section (Position 7.4.6).
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Diagnosis result open load over load including over temperature differentiated ON-state. Consideration must taken selection sense resistor order distinguish nominal currents from overload/short circuit fault state. potential sense achieved with sense resistor even with currents being much smaller than current limitation.
over load (current limitation) IL(LIM) over temperature
tsIS(OVL) VIS(fault)
OverLoad.emf
Figure
Timing Diagnosis Signal Over Load Condition
OFF-State Diagnosis
Details about timings between diagnosis signal output voltage VOUT load current OFF-state found Figure open load diagnosis OFF-state external output pull-up resistor (ROL) necessary.
Open Load, pull-up resistor active td(fault) VIS(fault)
pull-up resistor inactive ts(fault)
SwitchOff.emf
Figure
Timing Diagnosis Signal OFF-state
calculation pull-up resistor, just external leakage current Ileakage open load threshold voltage VOUT(OL) taken into account.
bb(min) OUT(OL,max) leakage
Ileakage defines leakage current complete system e.g. caused humidity. There internal leakage current from ground BTS5235-2G. Vbb(min) minimum supply voltage which open load diagnosis state must ensured. reduce stand-by current system, open load resistor switch (SOL) recommended.
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Diagnosis
Sense Enable Function
diagnosis signals have switched high signal sense enable (SEN). Figure details timing between diagnosis signal IIS. Please note that diagnosis disabled, when signal provided SEN.
tsIS(SEN)
tdIS(SEN)
tsIS(SEN)
tdIS(SEN)
SEN.emf
Figure
Timing Sense Enable Signal
circuit designed equally input pin. Please refer Figure details. resistors Rlim recommended limit current through sense pins case reverse polarity over voltage. Please refer maximum ratings Page stand-by current BTS5235-2G minimized, when both input pins (IN1 IN2) sense enable (SEN) level.
Electrical Characteristics
+150 VSEN (unless otherwise specified) typical values: 13.5
Pos. Parameter General Definition 7.4.1 Diagnostics signal failure mode
VIS(fault)
Symbol
Limit Values min. typ. max.
Unit
Conditions
VOUT VOUT
7.4.2 Diagnostics signal current limitation failure mode Open Load OFF-State 7.4.3 Open load detection threshold voltage
IIS(LIM)
VOUT(OL)
VOUT VOUT VOUT(OL)
7.4.4 Sense signal invalid after negative input slope td(fault) 7.4.5 Fault signal settling time
ts(fault)
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Diagnosis
+150 VSEN (unless otherwise specified) typical values: 13.5
Pos. Parameter Load Current Sense ON-State 7.4.6 Current sense ratio
kILIS
Symbol
Limit Values min. 1000 2300 2410 2465 1400 2465 2520 2580 typ. max. 2870 4035 3050 2920 2850 3410 2920 2875 2870 8000 3580 3380 3275 6000 3275 3220 3160
Unit
Conditions
7.4.7 Current sense voltage limitation 7.4.8 Current sense leakage/offset current 7.4.9 Current sense leakage, while diagnosis disabled 7.4.10 Current sense settling time static ±10% after positive input slope 7.4.11 Current sense settling time static ±10% after change load current Over Load ON-State 7.4.12 Over load detection current
VIS(LIM) IIS(LH) IIS(dis) tsIS(ON) tsIS(LC)
VSEN VIS(fault) VOUT
IL(OVL)
IL(LIM)
7.4.13 Sense signal settling time overload condition tsIS(OVL) Sense Enable 7.4.14 Input resistance 7.4.15 L-input level 7.4.16 H-input level 7.4.17 L-input current 7.4.18 H-input current 7.4.19 Current sense settling time
RSEN VSEN(L) VSEN(H) ISEN(L) ISEN(H) tsIS(SEN)
-0.3
VSEN VSEN VSEN VOUT VOUT(OL) VSEN
7.4.20 Current sense deactivation time
tdIS(SEN)
subject production test, specified design
Data Sheet
Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Package Outlines BTS5235-2G
Package Outlines BTS5235-2G
2.65
0.35
+0.09
2.45 -0.2
-0.1
-0.2
1.27 0.35 +0.15
+0.8 10.3 ±0.3
GPS05094
12.8 -0.2 Index Marking Does include plastic metal protrusions 0.15 side Does include dambar protrusion 0.05 side
Figure PG-DSO-20-43 (Plastic Dual Small Outline Package)
Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020).
further information alternative packages, please visit website: Data Sheet
0.23
Dimensions Rev.1.1, 2007-09-01
Smart High-Side Power Switch BTS5235-2G
Revision History
Revision History
Changes Modification Figure pages: added Infineon logo Creation green data sheet. First page: Adding green logo qualified Adding bullet qualified RoHS compliant features Package page Modification package green. Data sheet derived from BTS5235L grey Revision 1.0: parameter 4.1.6: change 110mJ 12V; added conditions Vbb=13.5V changed Figure parameter 4.1.7: -24V min. -17V max.
Version Date Rev. 2008-09-01 Rev.1.0 2007-06-29
Data Sheet
Rev.1.1, 2007-09-01
Edition 2007-09-01 Published Infineon Technologies 81726 Munich, Germany 9/17/08 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
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