BTM7750GP TrilithIC Automotive Power BTM7750GP Tab

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BTM7750GP TrilithIC Automotive Power BTM7750GP Tab

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Data Sheet, Rev. 1.0, July 2008
BTM7750GP
TrilithIC
Automotive Power
BTM7750GP
Table Contents
Table Contents Overview Configuration Assignment Terms Block Diagram Circuit Description Input Circuit Output Stages Short Circuit Protection Overtemperature Protection Undervoltage Lockout Status Flag Electrical Characteristics Absolute Maximum Ratings Functional Range Thermal Resistance Electrical Characteristics
Application Information Package Outlines Revision History
Data Sheet
Rev. 1.0, 2008-07-07
TrilithIC
BTM7750GP
Features
Overview
Quad D-MOS switch driver Free configurable bridge quad-switch Optimized motor management applications High side: typ. 25°C,165 max. 110°C side: typ. 25°C, max. 110°C Maximum peak current: typ. Very quiescent current: typ. Small outline, enhanced power PG-DSO-package Operates Status flag diagnosis Short-circuit-protection Overtemperature shut down with hysteresis Internal clamp diodes Under-voltage detection with hysteresis Green Product (RoHS compliant) Qualified
P-TO263-15-1
Description BTM7750GP part TrilithIC family containing three dies package: double high-side switch low-side switches. drains these three vertical DMOS chips mounted separated lead frames. sources connected individual pins, BTM7750GP used H-bridge- well other configuration. double high-side switch manufactured SMART SIPMOS® technology which combines vertical DMOS power stages with CMOS circuitry control, protection diagnosis. achieve fast switching performance, low-side switches manufactured S-FET logic level technology.
Type BTM7750GP Data Sheet
Package P-TO263-15-1
Marking BTM7750GP Rev. 1.0, 2008-07-07
BTM7750GP
Configuration
Assignment
Molding Compound DHVS Heat-Slug Heat-Slug Heat-Slug DHVS
Figure
Assignment BTM7750GP (Top View)
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Table
Definitions Functions Symbol Function DHVS DHVS Analog input low-side switch connected Source low-side switch connected Source high-side switch Ground high-side switches Digital input high-side switch Drain high-side switches power supply voltage Status; open Drain output Digital input high-side switch Source high-side switch connected Analog input low-side switch connected Source low-side switch Drain low-side switch Heat-Slug Heat-Dissipator Drain high-side switches power supply voltage Heat-Slug Heat-Dissipator Drain low-side switch Heat-Slug Heat-Dissipator
Pins written bold type need power wiring.
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Terms
VS=12V 470nF 100µF
IFH1,2 DHVS
VDSH2 -VFH2 Diagnosis Biasing Protection
VDSH1 -VFH1
VSTL VSTZ
IIH1
Gate Driver
IIH1 VIH1 VIH2
ISH2 IDL2 VUVON VUVOFF
IGND ILKCL
Gate Driver
ISH1 IDL1
Protection IIL1
Gate Driver
Protection VIL1 VIL2
IIL2
Gate Driver
VDSL1 -VFL1
VDSL2 -VFL2
ISCP ISL1
ISCP ISL2
Figure Table
Terms BTM7750GP
HS-Source-Current
Named during Short Circuit
Named during Leakage-Cond.
ISH1,2
ISCP
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Block Diagram
DHVS
Diagnosis Biasing Protection
Driver
Protection
Gate Driver
Protection
Gate Driver
Figure
Block Diagram BTM7750GP
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Circuit Description
Input Circuit
control inputs IH1,2 consist TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers driven these stages convert logic signal into necessary form driving power output stages. inputs protected clamp-diodes. inputs connected internal gate-driving units N-channel vertical power-MOS-FETs.
Output Stages
output stages consist RDSON Power-MOS H-bridge. H-bridge configuration, D-MOS body diodes used freewheeling when communicating inductive loads. high-side switches used single switches, positive negative voltage spikes which occur when driving inductive loads limited integrated power clamp diodes.
Short Circuit Protection
outputs protected against output short circuit ground output short circuit supply voltage, overload (load short circuit). internal OP-Amp controls Drain-Source-Voltage comparing DS-Voltage-Drop with internal reference voltage. Above this trip point OP-Amp reduces output current depending junction temperature drop voltage.
Overtemperature Protection
high-side low-side switches also incorporate over temperature protection circuit with hysteresis which switches output transistors. case high-side switches, status output low.
Undervoltage Lockout
When reaches switch-on voltage VUVON becomes active with hysteresis. High-Side output transistors switched supply voltage drops below switch value VUVOFF.
Status Flag
status flag output open drain output with zener-diode which requires pull-up resistor, shown application circuit Figure "Application Example BTM7750GP" Page Various errors listed table "Diagnosis" reported switching open drain output low.
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Table Flag
Truth table Diagnosis (valid only High-Side-Switches) Remarks Outputs stand-by mode switch2 active switch1 active both switches active detected detected detected detected detected Inputs
Normal operation; identical with functional truth table
Overtemperature high-side switch1 Overtemperature high-side switch2 Overtemperature both high-side switches
Under voltage
Inputs: Logic Logic HIGH don't care
Outputs: Output tristate condition Output sink condition Output source condition Voltage level undefined
Status: error Error
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings1) Pos. Parameter Symbol Limit Values min. High-Side-Switches (Pins DHVS, IH1,2 SH1,2) 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 5.1.7 5.1.8 5.1.9 5.1.10 5.1.11 5.1.12 5.1.13 5.1.14 5.1.15 5.1.16 5.1.17 5.1.18
Unit Remarks
max.
Supply voltage Supply voltage full short circuit protection HS-drain current2) HS-input current HS-input voltage Status pull voltage Status Output current Drain-Source-Clamp voltage
VS(SCP) VDSL
25°C;
Status Output
Low-Side-Switches (Pins DL1,2, IL1,2 SL1,2)
25°C
Supply voltage short circuit protection VDSL(SCP) LS-drain current2) LS-input voltage Junction temperature Storage temperature
Tstg VESD VESD VESD VESD
25°C;
Temperatures
Protection
Input LS-Switch Input HS-Switch Status HS-Switch Output HS-Switch
other pins connected Ground
subject production test; specified design Single pulse Internally limited susceptibility according EIA/JESD22-A114-B (1.5k, 100pF)
Note: Stresses above ones listed here cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Note: Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed continuous repetitive operation.
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Pos. 5.2.19 5.2.20 5.2.21 5.2.22 5.2.23
Functional Range
Parameter Supply voltage Input voltage Input voltage Status output current Junction temperature Symbol Limit Values min. max. After rising above VUVON Unit Remarks
VUVOFF
Note: Within functional range operates described circuit description. electrical characteristics specified within conditions given related electrical characteristics table
Pos. 5.3.24 5.3.25 5.3.26
Thermal Resistance
Parameter LS-junction soldering point1) HS-junction soldering point Junction Ambient RthJA Tj(HS) (P(HS)+ P(LS))
Symbol Min.
Limit Values Typ. Max.
Unit
Conditions
RthJSP RthJSP RthJA
subject production test, specified design. Specified RthJA value according Jedec JESD51-2,-5,-7 natural convection 2s2p board; Product (chip+package) simulated 76.2 114.3 board with inner copper layers 70µm 35µm Cu). Where applicable thermal array under exposed contacted first inner copper layer.
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Electrical Characteristics
ISH1 ISH2 ISL1 ISL2 unless otherwise specified
Pos.
Parameter
Symbol
Limit Values min. typ. 1.65 max.
Unit Test Condition
Current Consumption HS-switch 5.4.27 Quiescent current
5.4.28 5.4.29 5.4.30 5.4.31
Supply current; HS-switch active Supply current; both HS-switches active Leakage current high-side switch Leakage current through logic free wheeling condition Input current
ILKCL
normal operation
failure mode
Current Consumption LS-switch 5.4.32
5.4.33
Leakage current low-side switch
VDSL increasing decreasing VUVON VUVOFF °C1) °C1)
Under Voltage Lockout HS-switch 5.4.34 5.4.35 5.4.36 5.4.37 5.4.38 5.4.39 Switch-ON voltage Switch-OFF voltage Switch ON/OFF hysteresis Inverse diode high-side switch; Forward-voltage Inverse diode low-side switch; Forward-voltage Static drain-source on-resistance high-side switch
VUVON VUVOFF VUVHY
Output stages
5.4.40
Static drain-source on-resistance low-side switch
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
ISH1 ISH2 ISL1 ISL2 unless otherwise specified
Pos.
Parameter
Symbol
Limit Values min. typ. max.
Unit Test Condition
Short Circuit high-side switch 5.4.41 Initial peak current tdel VDSH
ISCP
°C1) VDSL °C1)
Short Circuit high-side switch 5.4.42 5.4.43 Output pull-down-resistor Initial peak current VDSL 12V; tdel Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis output voltage Leakage current Zener-limit-voltage
ISCP
Short Circuit low-side switch
Thermal Shutdown1) 5.4.44 5.4.45 5.4.46 5.4.47 5.4.48 5.4.49
TjSD TjSO
Status Flag Output high-side switch
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
ISH1 ISH2 ISL1 ISL2 unless otherwise specified
Pos.
Parameter
Symbol
Limit Values min. typ. max.
Unit Test Condition
Switching times high-side switch 5.4.50 5.4.51 5.4.52 5.4.53 5.4.54 5.4.55 5.4.56 5.4.57 Turn-ON-time Turn-OFF-time
Slew rate Slew rate
tOFF dV/dtON -dV/dtOFF tOFF
-dV/dtON
RLoad
Switching times low-side switch Turn-ON-time Turn-OFF-time Slew rate Slew rate
RLoad
dV/dtOFF
RLoad
Control Inputs high-side switches 5.4.58 5.4.59 5.4.60 5.4.61 5.4.62 5.4.63 5.4.64 5.4.65 H-input voltage L-input voltage Input voltage hysteresis H-input current L-input current Input series resistance Zener limit voltage Gate-threshold-voltage
High High
Control Inputs IL1,
subject production test; specified design
Note: listed characteristics ensured over operating range integrated circuit. Typical characteristics specified mean values expected over production spread. otherwise specified, typical characteristics apply given supply voltage.
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Application Information
Note: following simplified application examples given hint implementation device only shall regarded description warranty certain functionality, condition quality device. function described circuits must verified real application
Watchdog Reset
4278G
47nF
VS=12V
22µF
10µF
DHVS
Diagnosis
Biasing Protection
Gate Driver
Gate Driver
XC866
Protection
Gate Driver
Protection
Gate Driver
case VDSL<-0.6V reverse battery current into might limited external resitors protect
Figure
Application Example BTM7750GP
Data Sheet
Rev. 1.0, 2008-07-07
BTM7750GP
Package Outlines
21.6 ±0.2 1±0.2 5.56 ±0.15 8.18 ±0.15 1.27 ±0.1
1±0.3
0.05
8.21)
(15)
9.25 ±0.2
8.41)
0.0.15 14x1.4 ±0.1
±0.5
±0.3
±0.1
max.
0.25
Typical metal surfaces plated, except area cut.
GPT09151
Footprint
21.6
Figure
P-TO263-15-1 (Plastic Transistor Single Outline Package)
Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020).
further information alternative packages, please visit website: Data Sheet
Dimensions
Rev. 1.0, 2008-07-07
BTM7750GP
Rev. Date
Revision History
Changes Initial Version
2008-07-07
Data Sheet
Rev. 1.0, 2008-07-07
Edition 2008-07-07 Published Infineon Technologies 81726 Munich, Germany 7/10/08 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.

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