BGB707L7ESD SiGe:C Wideband MMIC with Integrated Protection
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Data Sheet, Rev. 3.1, August 2009
BGB707L7ESD
SiGe:C Wideband MMIC with Integrated Protection
Small Signal Discretes
Edition 2009-08-14 Published Infineon Technologies 85579 Neubiberg, Germany Infineon Technologies 2009. Rights Reserved. Attention please! information herein given describe certain components shall considered guarantee characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
BGB707L7ESD
BGB707L7ESD, SiGe:C Wideband MMIC with Integrated Protection Revision History: 2009-08-14, Rev. Prevision History: Target Datasheets Rev. 1.3, Preliminary Datasheet Rev. 2.0, Final Data Sheet Rev. Rev. typical electrical performance added SDMB application chapter 6.2.2
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
SiGe:C Wideband MMIC with Integrated Protection
SiGe:C Wideband MMIC with Integrated Protection
Features High performance general purpose wideband MMIC fT-Silicon Germanium Carbon technology protection integrated pins input GND, other combinations, HBM) Very high gain current consumption High input compression point Excellent noise figure from latest SiGe:C technology Integrated active biasing circuit enables stable operation point against temperature- processing-variations Operation voltage: Adjustable operation current external resistor Power-off function Very small leadless package TSLP-7-1, Pb-free (RoHS compliant) halogen-free (WEEE compliant) package
Applications Radio, Mobile RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB,
Product Brief
BGB707L7ESD Silicon Germanium Carbon (SiGe:C) noise amplifier MMIC with integrated protection active biasing. device flexible discrete transistor features high gain, reduced power consumption very distortion very wide range applications. Device based upon Infineon Technologies cost effective SiGe:C technology comes profile TSLP-7-1 leadless green package Type BGB707L7ESD Package TSLP-7-1 Marking
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Product Brief
Figure Table
Pinning PG-TSLP-7-1 Pinning table Function
Bias Control On/Off Current Adjust
following diagram shows principal schematic BGB707L7ESD used circuit. Power On/Off function controlled applying Vctrl. using external resistor Rext pre-set current (which adjusted integrated biasing when Rext omitted) increased. Base- collector voltages applied respective pins external inductors.
Figure Data Sheet
Functional block Rev. 3.1, 2009-08-14
BGB707L7ESD
Maximum Ratings
Maximum Ratings
Maximum ratings 25°C (unless otherwise specified) Symbol Value -55.150 Unit
Table Parameter
Supply Voltage -55°C Supply Current Current Voltage Ctrl On/Off Total Power Dissipation TS<112°C1) Operation Junction Temperature
Vctrl Ptot TJOp TStg
Storage Temperature -55.150 soldering point temperature. measured soldering point Note: Exceeding only above maximum rating limits even short moment cause permanent damage device. Even device continues operate, lifetime considerably shortened. Maximum ratings stress ratings only mean unaffected functional operation lifetime others than standard operation conditions.
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Thermal Characteristics
Thermal Characteristics
Table Parameter
Thermal Resistance Symbol
Value
Unit
Junction Soldering Point RthJS calculation RthJA please refer Application Note Thermal Resistance
Ptot [mW]
[°C]
Figure
Total Power Dissipation Ptot (Ts)
Operation Conditions
Table Parameter
Operation Conditions Symbol Min. Values Typ. Max. -0.3 Unit Note Test Condition
Supply Voltage Voltage Ctrl On/Off mode Voltage Ctrl On/Off mode
Vctrl-on Vctrl-off
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Electrical Characteristics
Electrical Characteristics
Characteristics
Table Parameter
Characteristics 25°C Symbol Min. Values Typ. Max. Unit Note Test Condition V,VCtrl
Supply Current
Rext open Rext Rext Rext Rext
V,VCtrl V,VCtrl V,VCtrl
ICC-off Current into Ctrl On/Off mode ICtrl-on Current into Ctrl On/Off mode ICtrl-off
Collector Current mode
Characteristics
characteristics described sub-chapters, first 100MHz Radio applications, then higher frequencies environment.
6.2.1
Characteristics Radio Applications
BGB707L7ESD radio application notes available website www.infineon.com/BGB707. Depending impedance used antenna, please consult AN177 high-ohmic antennas AN181 antennas. this chapter find summary electrical performance described these application notes table form.
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Electrical Characteristics
6.2.1.1
High-ohmic Radio Antenna
Table Parameter
Characteristics Radio application described AN177 25°C, VCtrl Symbol Min. Values Typ. -5.5 -12.5
Unit Max.
Note Test Condition
Transducer Gain Input Return Loss Output Return Loss Noise Figure Input Gain Compression Point Input Order Intercept Point
RLIN RLOUT IP1dB IIP3
presents high input impedance match over 76-108 radio band. increases input power level approaches IP1dB. IIP3 value depends termination intermodulation frequency components. Termination used measurement from GHz.
6.2.1.2
Radio Antenna
Table Parameter
Characteristics Radio application described AN181 25°C, VCtrl Symbol Min. Values Typ. 14.5 1.35 -7.5 Max. 16.5 13.5 Unit Note Test Condition
Transducer Gain Input Return Loss Output Return Loss Noise figure Input Gain Compression Point
RLIN RLOUT IP1dB
Input Order Intercept Point IIP3
from GHz. Verified random sampling
increases input power level approaches IP1dB. IIP3 value depends termination intermodulation frequency components. Termination used measurement
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Electrical Characteristics
6.2.2
Characteristics SDMB Application
technical report TR122 applications frequency range available website www.infineon.com/BGB707. this chapter find summary electrical performance SDMB application described technical report TR122 table form.
Table Parameter
Characteristics SDMB application described TR122< 25°C Symbol Min. Values Typ. 1.15 Max. Including connectors losses Power port1 Unit Note Test Condition
Frequency Range Supply Voltage Bias Current Transducer Gain Transducer Gain (off mode) Noise Figure
Freq
Input Return Loss Output Return Loss Reverse Isolation Input P1dB Output P1dB Input Output Switching Time Switching Time Stability
RLIN RLOUT IREV IP1dB OP1dB IIP3 OIP3 Toff
13.2 27.8 -9.6 -1.4 13.6
Stability measured Measured with Input power Power port2
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Electrical Characteristics
6.2.3
Characteristics Test Fixture
frequencies from measurement setup test fixture with Bias-T's system
Figure Table Parameter
Testing circuit frequencies from Characteristics Symbol Min. Values Typ. 0.55 Max. Unit Note Test Condition
Minimum Noise Figure
NFmin
Transducer Gain
Maximum Power Gain
31.5
Input Gain Compression Point
IP1dB,m
-12.5
Input Order Intercept Point Data Sheet
IIP3,m
-26.5
ZSopt ZLopt, ZSopt mA2)
Rev. 3.1, 2009-08-14
BGB707L7ESD
Electrical Characteristics Table Parameter Characteristics (cont'd) Symbol Min. Values Typ. -8.5
Unit Max.
Note Test Condition
IP1dB,m input compression point achieved when device matched input with -10dB. Therefore IP1dB,m value good indicator linearity achievable application. quiescent current, that small input power level. increases input power level approaches P1dB. IIP3,m input order intercept point achieved when device matched input with -10dB.
Table Parameter Minimum Noise Figure Characteristics Symbol Min. Values Typ. 0.45 0.45 Transducer Gain Max. Unit Note Test Condition
NFmin
Maximum Power Gain
30.5
Input Gain Compression Point
IP1dB,m
-13.5 -19.5 -23.5
Input Order Intercept Point
IIP3,m
-25.5 -17.5
ZSopt ZLopt, ZSopt mA2)
IP1dB,m input compression point achieved when device matched input with -10dB. Therefore IP1dB,m value good indicator linearity achievable application. quiescent current, that small input power level. increases input power level approaches P1dB. IIP3,m input order intercept point achieved when device matched input with -10dB.
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Electrical Characteristics
Table Parameter
Characteristics Symbol Min. Values Typ. 0.55 0.55 Max. Unit Note Test Condition
Minimum Noise Figure
NFmin
Transducer Gain
23.5
Maximum Power Gain
27.5
Input Gain Compression Point
IP1dB,m
-22.5
Input Order Intercept Point
IIP3,m
-14.5 -11.5
ZSopt ZLopt, ZSopt mA2)
IP1dB,m input compression point achieved when device matched input with -10dB. Therefore IP1dB,m value good indicator linearity achievable application. quiescent current, that small input power level. increases input power level approaches P1dB. IIP3,m input order intercept point achieved when device matched input with -10dB.
Table Parameter
Characteristics Symbol Min. Values Typ. Max. Unit Note Test Condition
Minimum Noise Figure
NFmin
Transducer Gain
21.5
ZSopt
Rev. 3.1, 2009-08-14
Data Sheet
BGB707L7ESD
Electrical Characteristics Table Parameter Characteristics (cont'd) Symbol Min. Maximum Power Gain Values Typ. Max. Input Gain Compression Point
Unit
Note Test Condition
IP1dB,m
-12.5 -16.5
Input Order Intercept Point
IIP3,m
-16.5 -8.5
ZLopt, ZSopt mA2)
IP1dB,m input compression point achieved when device matched input with -10dB. Therefore IP1dB,m value good indicator linearity achievable application. quiescent current, that small input power level. increases input power level approaches P1dB. IIP3,m input order intercept point achieved when device matched input with -10dB.
Table Parameter
Characteristics Symbol Min. Values Typ. 0.65 Max. Unit Note Test Condition
Minimum Noise Figure
NFmin
Transducer Gain
15.5 21.5
Maximum Power Gain
Input Gain Compression Point
IP1dB,m
-4.5 -9.5
ZSopt ZLopt, ZSopt mA2)
Rev. 3.1, 2009-08-14
Data Sheet
BGB707L7ESD
Electrical Characteristics Table Parameter Characteristics (cont'd) Symbol Min. Input Order Intercept Point
Values Typ. -12.5 -11.5 -5.5 Max.
Unit
Note Test Condition
IIP3,m
IP1dB,m input compression point achieved when device matched input with -10dB. Therefore IP1dB,m value good indicator linearity achievable application. quiescent current, that small input power level. increases input power level approaches P1dB. IIP3,m input order intercept point achieved when device matched input with -10dB.
Table Parameter
Characteristics Symbol Min. Values Typ. 1.05 0.95 Max. Unit Note Test Condition
Minimum Noise Figure
NFmin
Transducer Gain
11.5 15.5
Maximum Power Gain
17.5 18.5
Input Gain Compression Point
IP1dB,m
-9.5
Input Order Intercept Point
IIP3,m
-2.5
ZSopt ZLopt, ZSopt
IP1dB,m input compression point achieved when device matched input with -10dB. Therefore IP1dB,m value good indicator linearity achievable application. IIP3,m input order intercept point achieved when device matched input with -10dB.
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Electrical Characteristics
Table Parameter
Characteristics Symbol Min. Values Typ. Max. Unit Note Test Condition
Minimum Noise Figure
NFmin
Transducer Gain
Maximum Power Gain
14.5 15.5 15.5
Input Gain Compression Point
IP1dB,m
-2.5
Input Order Intercept Point
IIP3,m
-0.5
ZSopt ZLopt, ZSopt
IP1dB,m input compression point achieved when device matched input with -10dB. Therefore IP1dB,m value good indicator linearity achievable application. IIP3,m input order intercept point achieved when device matched input with -10dB.
Data Sheet
Rev. 3.1, 2009-08-14
BGB707L7ESD
Package Information
Package Information
view
0.05 MAX.
+0.1
Bottom view
±0.05 ±0.05
±0.05
±0.035
marking
±0.035
TSLP-7-1-PO
Dimension applies plated terminal
Figure
Package Outline TSLP-7-1
NSMD
0.25
0.25
±0.05
±0.035
±0.035
0.25
Copper
0.25
Stencil apertures
R0.1
Copper
0.25
0.25 0.25
Stencil apertures
R0.1
Solder mask
Solder mask
TSLP-7-1-FP
Figure
Footprint
BGB707L7ESD Type Code
Figure
Marking Layout (top view)
2.18
marking
1.45
TSLP-7-1-TP
Figure Data Sheet
Tape Dimensions Rev. 3.1, 2009-08-14
0.25
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