Silicon N-Channel MOSFET Triode high-frequency stages preferably appli
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BF999
Silicon N-Channel MOSFET Triode high-frequency stages preferably applications Pb-free (RoHS compliant) package Qualified according Q101
(Electrostatic discharge) sensitive device, observe handling precaution!
Type BF999
Maximum Ratings Parameter
Marking
Configuration
Package SOT23
Symbol IGSM Ptot Tstg
Value
Unit
Drain-source voltage Continuous drain current Gate-source peak current Total power dissipation Storage temperature Channel temperature Thermal Resistance Parameter Channel soldering point2)
1Pb-containing 2For
Symbol
Rthchs
Value
Unit
package available upon special request calculation RthJA please refer Application Note Thermal Resistance
2007-04-20
BF999
Electrical Characteristics 25°C, unless otherwise specified Symbol Values Parameter min. Characteristics Drain-source breakdown voltage -VGS Gate-source breakdown voltage Gate-source leakage current Drain current Gate-source pinch-off voltage Electrical Characteristics 25°C, unless otherwise specified Symbol Values Parameter min. Characteristics Forward transconductance Gate input capacitance Output capacitance Power gain Noise figure Cdss Cgss typ. max. -VGS(p) IDSS IGSS ±V(BR)GSS V(BR)DS typ. max.
Unit
Unit
2007-04-20
BF999
Total power dissipation Ptot (TS) Output characteristics
0.3V
0.2V
0.1V -0.1V -0.2V -0.3V
-0.4V
Gate transconductance
Drain current
-0.5
2007-04-20
BF999
Gate input capacitance Cgss (VGS) Output capacitance (VDS)
CgSS
CdSS
2007-04-20
Package SOT23
BF999
Package Outline
0.15 MIN.
±0.1 MAX.
±0.1
±0.1
±0.15
MAX.
+0.1 -0.05
MAX.
0.95
0.08.0.1
0.8°
0.25
Lead width max. dambar area
Foot Print
Marking Layout (Example)
Manufacturer
2005, June Date code (YM)
BCW66 Type code
Standard Packing
Reel 3.000 Pieces/Reel Reel 10.000 Pieces/Reel
2.13 2.65
3.15
1.15
2007-04-20
BF999
Edition 2006-02-01 Published Infineon Technologies 81726 Germany Infineon Technologies 2007. Rights Reserved.
Attention please! information given this dokument shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
2007-04-20
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