Silicon N_Channel MOSFET Tetrode Short-channel transistor with high qu

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Silicon N_Channel MOSFET Tetrode Short-channel transistor with high qu

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BF998.
Silicon N_Channel MOSFET Tetrode Short-channel transistor with high quality factor low-noise, gain-controlled input stage Pb-free (RoHS compliant) package Qualified according Q101
(Electrostatic discharge) sensitive device, observe handling precaution!
Type BF998 BF998R
Package SOT143 SOT143R
Configuration 3=G2 3=G1 4=G1 4=G2
Marking
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate gate 2-source current Total power dissipation BF998, BF998R Storage temperature Channel temperature Thermal Resistance Parameter Channel soldering point2), BF998, BF998R
1Pb-containing 2For
Symbol ±IG1/2SM Ptot Tstg Symbol
Rthchs
Value
Unit
Value
Unit
package available upon special request calculation RthJA please refer Application Note Thermal Resistance
2007-04-20
BF998.
Electrical Characteristics 25°C, unless otherwise specified Parameter Symbol Values min. Characteristics Drain-source breakdown voltage VG1S VG2S Gate source breakdown voltage ±IG2S VG2S Gate2 source breakdown voltage ±IG2S VG2S Gate source leakage current VG2S Gate source leakage current VG2S Drain current VG1S VG2S Gate source pinch-off voltage VG2S Gate source pinch-off voltage VG1S -VG2S(p) -VG1S(p) IDSS ±IG2SS ±IG1SS (BR)G2SS (BR)G1SS V(BR)DS typ. max.
Unit
2007-04-20
BF998.
Electrical Characteristics 25°C, unless otherwise specified Parameter Symbol Values min. Characteristics (verified random sampling) Cg1ss Forward transconductance VG2S Gate1 input capacitance VG2S Gate input capacitance VG2S Feedback capacitance VG2S Output capacitance VG2S Power gain VG2S VG2S Noise figure VG2S VG2S Gain control range Cdss Cdg1 Cg2ss typ. max.
Unit
2007-04-20
BF998.
Total power dissipation Ptot (TS) BF998, BF998R Output characteristics VG2S VG1S Parameter
0.4V
0.2V
-0.4V -0.2V
Gate forward transconductance (ID) VG2S Parameter
Gate forward transconductance (VG1S)
-0.75
-0.5
-0.25
0.25
0.75
VG1S
2007-04-20
BF998.
Drain current (VG1S) VG2S Parameter
Power gain (VG2S)
-0.75 -0.5 -0.25
0.25
VG1S
VG2S
Noise figure (VG2S)
Noise figure (VG2S)
VG2S
VG2S
2007-04-20
BF998.
Power gain (VG2S) Gate input capacitance Cg1ss (VG1S)
Cg1ss
-2.6
-2.2
-1.8
-1.4
-0.6
VG2S
VG1S
Output capacitance (VDS)
Cdss
2007-04-20
Package SOT143
BF998.
Package Outline
0.15 MIN.
±0.1
±0.1 MAX.
±0.1
±0.15
MAX.
MAX.
+0.1 -0.05 +0.1 -0.05 0.25
0.08.0.1
0.8°
Foot Print
Marking Layout (Example)
Manufacturer
Standard Packing
Reel 3.000 Pieces/Reel Reel 10.000 Pieces/Reel
2005, June Date code (YM)
BFP181 Type code
3.15
1.15
2007-04-20
Package SOT143R
BF998.
Package Outline
0.15 MIN.
±0.1
±0.1
MAX.
±0.15
+0.1 -0.05
MAX.
0.08.0.15
+0.1 -0.05 0.25
Foot Print
Marking Layout (Example)
Reverse
2005, June Date code (YM)
Manufacturer
BFP181R Type code
Standard Packing
Reel 3.000 Pieces/Reel Reel 10.000 Pieces/Reel
3.15
1.15
MAX. ±0.1
2007-04-20
BF998.
Edition 2006-02-01 Published Infineon Technologies 81726 Germany Infineon Technologies 2007. Rights Reserved.
Attention please! information given this dokument shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office www.infineon.com). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
2007-04-20

Silicon N_Channel MOSFET Tetrode Short-channel transistor with high qu

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