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BTN7930 High Current Half Bridge NovalithIC Automotive Power


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Data Sheet, Rev. 1.1, Nov. 2007
BTN7930
High Current Half Bridge NovalithIC
Automotive Power
High Current Half Bridge BTN7930
Table Contents
5.2.1 5.2.2 5.2.3 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.4.1 5.4.2 5.4.3 5.4.4 5.4.5 5.4.6 Overview Block Diagram Block Diagram Terms Configuration Assignment Definitions Functions General Product Characteristics Absolute Maximum Ratings Functional Range Thermal Resistance
Block Description Characteristics Supply Characteristics Power Stages Power Stages Static Characteristics Switching Times Power Stages Dynamic Characteristics Protection Functions Overvoltage Lock Undervoltage Shut Down Overtemperature Protection Current Limitation Short Circuit Protection Electrical Characteristics Protection Functions Control Diagnostics Input Circuit Dead Time Generation Adjustable Slew Rate Status Flag Diagnosis With Current Sense Capability Truth Table Electrical Characteristics Control Diagnostics Application Information Application Example Layout Considerations Half-bridge Configuration Considerations Package Outlines PG-TO263-7-1 PG-TO220-7-11 PG-TO220-7-12
Revision History
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge NovalithIC
BTN7930B BTN7930P BTN7930S
Features
Overview
Path resistance max. (typ. High Side: max. (typ. Side: max. (typ. (for BTN7930B (SMD)) quiescent current typ. capability combined with active freewheeling Switched mode current limitation reduced power dissipation overcurrent Current limitation level min. typ. (low side) Status flag diagnosis with current sense capability Overtemperature shut down with latch behaviour Overvoltage lock Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates optimized Green Product (RoHS compliant) Qualified
PG-TO263-7-1
Description BTN7930 integrated high current half bridge motor drive applications. part NovalithICfamily containing p-channel highside MOSFET n-channel lowside MOSFET with integrated driver package. p-channel highside switch need charge pump eliminated thus minimizing EMI. Interfacing microcontroller made easy integrated driver which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation protection against overtemperature, overvoltage, undervoltage, overcurrent short circuit. BTN7930 provides cost optimized solution protected high current motor drives with very board space consumption. PG-TO220-7-12 PG-TO220-7-11
Type BTN7930B BTN7930P BTN7930S Data Sheet
Package PG-TO263-7-1 PG-TO220-7-11 PG-TO220-7-12
Marking BTN7930B BTN7930P BTN7930S Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Diagram
Block Diagram
BTN7930 part NovalithICfamily containing three separate chips package: p-channel highside MOSFET n-channel lowside MOSFET together with driver forming integrated high current half-bridge. three chips mounted common lead frame, using chip chip chip chip technology. power switches utilize vertical technologies ensure optimum state resistance. p-channel highside switch need charge pump eliminated thus minimizing EMI. Interfacing microcontroller made easy integrated driver which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation protection against overtemperature, overvoltage, undervoltage, overcurrent short circuit. BTN7930 combined with other BTN7930 form H-bridge 3-phase drive configurations.
Block Diagram
Undervolt. detection
Overvolt. detection
Current Sense
Overcurr. Detection Overtemp. detection Digital Logic Gate Driver
Gate Driver
Slewrate Adjustment
Overcurr. Detection
Figure
Block Diagram
Terms
Following figure shows terms used this data sheet.
IINH
IGND
Figure Data Sheet
Terms Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Configuration
Configuration
Assignment
1234
1234567
Figure Assignment BTN7930B, BTN7930P BTN7930S (top view)
Definitions Functions
Symbol Function Ground Input Defines whether high- lowside switch activated Inhibit When device goes sleep mode Power output bridge Slew Rate slew rate power switches adjusted connecting resistor between Current Sense Diagnostics Supply
Bold type: needs power wiring
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
General Product Characteristics
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
+150 voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. Voltages 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 Currents 4.1.6 HS/LS Continuous Drain Current2) Supply Voltage Logic Input Voltage Voltage Voltage between Voltage Parameter Symbol Min. Limit Values Max. Unit Conditions
VINH -VIS ID(HS) ID(LS)
-0.3 -0.3 -0.3 -0.3
85°C switch active 125°C switch active 85°C tpulse 10ms
single pulse
4.1.7
HS/LS Pulsed Drain Current2)
ID(HS) ID(LS)
125°C tpulse 10ms
single pulse
4.1.8
HS/LS Current
ID(HS) ID(LS)
85°C 1kHz, 125°C 1kHz, 85°C 20kHz, 125°C 20kHz,
HBM3)
Temperatures 4.1.9 4.1.10 4.1.11 Junction Temperature Storage Temperature Susceptibility INH, OUT, GND,
Tstg VESD
Susceptibility
subject production test, specified design Maximum reachable current smaller depending current limitation level susceptibility, according EIA/JESD22-A114-B (1.5
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
General Product Characteristics Note: Stresses above ones listed here cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Note: Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed continuous repetitive operation.
Maximum Single Pulse Current
1,0E-03
1,0E-02
1,0E-01 pulse[s]
1,0E+00
1,0E+01
Figure
BTN7930 Maximum Single Pulse Current 85°C)
This diagram shows maximum single pulse current that driven given pulse time tpulse. maximum reachable current smaller depending current limitation level. Pulse time limited thermal protection device.
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
General Product Characteristics
Pos. 4.2.1 4.2.2 4.2.3
Functional Range
Parameter Supply Voltage Range Nominal Operation Symbol Min. Limit Values Max. Parameter Deviations possible Unit Conditions
VS(nom)
Extended Supply Voltage Range VS(ext) Operation Junction Temperature
Note: Within functional operating range, operates described circuit description. electrical characteristics specified within conditions given Electrical Characteristics table.
Pos. 4.3.1
Thermal Resistance
Parameter Thermal Resistance Junction-Case, Side Switch1) Rthjc(LS) Tj(LS)/ Pv(LS) Thermal Resistance Junction-Case, High Side Switch1) Rthjc(HS) Tj(HS)/ Pv(HS) Thermal Resistance Junction-Case, both Switches1) Rthjc max[Tj(HS), Tj(LS)] (Pv(HS) Pv(LS)) Thermal Resistance Junction-Ambient1) Symbol Min. Limit Values Typ. Max. Unit Conditions
RthJC(LS)
4.3.2
RthJC(HS)
4.3.3
RthJC
4.3.4
RthJA
subject production test, specified design Specified RthJA value according Jedec JESD51-2,-5,-7 natural convection 2s2p board; Product (chip+package) simulated 76.2 114.3 board with inner copper layers Cu).
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
Block Description Characteristics
Supply Characteristics
+150 voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. General 5.1.1 Supply Current Parameter Symbol Min. Limit Values Typ. Max. Unit Conditions
IVS(on)
VINH
DC-mode normal operation fault condition)
5.1.2
Quiescent Current
IVS(off)
VINH VINH
[µA]
[°C]
Figure
Typical Quiescent Current Junction Temperature
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
Power Stages
power stages BTN7930 consist p-channel vertical DMOS transistor high side switch n-channel vertical DMOS transistor side switch. protection diagnostic functions located separate chip. Both switches operated kHz, allowing active freewheeling thus minimizing power dissipation forward operation integrated diodes. state resistance dependent supply voltage well junction temperature typical state resistance characteristics shown Figure
High Side Switch
Side Switch
RON(HS)
RON(LS
150°C 25°C -40°C
150°C
25°C -40°C
Figure
Typical State Resistance Supply Voltage (BTN7930B)
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
5.2.1
Power Stages Static Characteristics
+150 voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. Parameter Symbol Min. High Side Switch Static Characteristics 5.2.1 State High Side Resistance1) RON(HS) 5.2.2 Leakage Current High Side 10.8 15.2 10.1 14.2 18.2 17.2 5.2.5 Leakage Current Side 18.8 29.2 18.1 28.2 39.2 38.2 Limit Values Typ. Max. Unit Conditions
IOUT 13.5
BTN7930B BTN7930P
BTN7930S
IL(LKHS)
5.2.3
Reverse Diode Forward-Voltage VDS(HS) High Side2)
VINH VOUT VINH VOUT IOUT IOUT 13.5
BTN7930B
Side Switch Static Characteristics 5.2.4 State Side Resistance1) RON(LS)
BTN7930P BTN7930S
IL(LKLS)
5.2.6
Reverse Diode Forward-Voltage VSD(LS) Side2)
VINH VOUT VINH VOUT IOUT
Specified value related normal soldering points; values specified BTN7930B: (tab, backside) BTN7930P/BTN7930S: pin4 active freewheeling, diode conducting only depending
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
5.2.2
Switching Times
dr(HS VOUT
r(HS
VOUT
VOUT
Figure Definition switching times high side (Rload GND)
VOUT
tdr(LS
tr(LS
VOUT
Figure Definition switching times side (Rload
timing differences rising falling edge there will slight difference between length input pulse length output pulse. calculated using following formulas:
(tdr(HS) tr(HS)) (tdf(HS) tf(HS)) (tdf(LS) tf(LS)) (tdr(LS) tr(LS)).
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
5.2.3
Power Stages Dynamic Characteristics
13.5 +150 Rload voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. Parameter Symbol Min. High Side Switch Dynamic Characteristics 5.2.7 Rise-Time Limit Values Typ. Max. 5.2.8 Slew Rate on1) 10.8 10.8 V/µs 5.2.10 Fall-Time 21.6 5.2.11 Slew Rate off1) V/µs 21.6 Unit Conditions
tr(HS)
VOUT/
5.2.9
Switch Delay Time
tdr(HS)
tf(HS)
-VOUT/ tf(HS)
5.2.12
Switch Delay Time
tdf(HS)
subject production test, calculated value; |VOUT|/ tr(HS) |-VOUT|/ tf(HS)
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
13.5 +150 Rload voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. Parameter Symbol Min. Side Switch Dynamic Characteristics 5.2.13 Rise-Time Limit Values Typ. Max. 5.2.14 Slew Rate switch off1) 10.8 V/µs 5.2.16 Fall-Time 5.2.17 Slew Rate switch on1) -VOUT/ tf(LS) 5.2.18 Switch Delay Time V/µs 21.6 Unit Conditions
tr(LS)
VOUT/
tr(LS)
5.2.15
Switch Delay Time
tdr(LS)
tf(LS)
tdf(LS)
subject production test, calculated value; |VOUT|/ tr(LS) |-VOUT|/ tf(LS)
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
Protection Functions
device provides integrated protection functions. These designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions used continuous repetitive operation, with exception current limitation (Chapter 5.3.4). fault condition BTN7930 will apply highest slew rate possible independent connected slew rate resistor. Overvoltage, overtemperature overcurrent indicated fault current IIS(LIM) described paragraph "Status Flag Diagnosis With Current Sense Capability" Page Figure following protection functions listed order their priority. Overvoltage lock overrides other error modes.
5.3.1
Overvoltage Lock
assure high immunity against overvoltages (e.g. load dump conditions) device shuts lowside MOSFET turns highside MOSFET supply voltage exceeding over voltage protection level VOV(OFF). operates normal mode again with hysteresis VOV(HY) supply voltage decreases below switchon voltage VOV(ON). H-bridge configuration, this behavior BTN7930 will lead freewheeling highside during over voltage.
5.3.2
Undervoltage Shut Down
avoid uncontrolled motion driven motor voltages device shuts (output tri-state), supply voltage drops below switch-off voltage VUV(OFF). becomes active again with hysteresis VUV(HY) supply voltage rises above switch-on voltage VUV(ON).
5.3.3
Overtemperature Protection
BTN7930 protected against overtemperature integrated temperature sensor. Overtemperature leads shut down both output stages. This state latched until device reset signal with minimum length treset pin, provided that temperature decreased least thermal hysteresis meantime. Repetitive overtemperature protection impacts lifetime.
5.3.4
Current Limitation
current bridge measured both switches. soon current forward direction switch (high side side) reaching limit ICLx, this switch deactivated other switch activated tCLS. During that time changes ignored. However, still used switch both MOSFETs off. After tCLS switches return their initial setting. error signal reset after tCLS. Unintentional triggering current limitation short current spikes (e.g. inflicted coming from motor) suppressed internal filter circuitry. thresholds reaction delay times filter circuitry effective current limitation level ICLx depends slew rate load current dI/dt shown Figure
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
ICLx ICLx
tCLS
Figure Timing Diagram Current Limitation (Inductive Load)
High Side Switch
Side Switch
1000
25°C
-40°C
150°C
ICLH0
ICLL0
1500 2000
25°C
-40°C
150°C
1000
1500
2000
dIL/dt [A/ms]
Figure Typical Current Limitation Level Current Slew Rate dI/dt
dIL/dt [A/ms]
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
High Side Switch
Side Switch
-40°C 25°C
150°C
-40°C 25°C
150°C
Figure Typical Current Limitation Detection Levels Supply Voltage
combination with typical inductive load, such motor, this results switched mode current limitation. This method limiting current advantage greatly reduced power dissipation BTN7930 compared driving MOSFET linear mode. Therefore possible current limitation short time without exceeding maximum allowed junction temperature (e.g. limiting inrush current during motor start up). However, regular current limitation allowed long specified maximum junction temperature exceeded. Exceeding this temperature reduce lifetime device.
5.3.5
Short Circuit Protection
device short circuit protected against output short circuit ground output short circuit supply voltage short circuit load
short circuit protection realized previously described current limitation combination with overtemperature shut down device.
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
5.3.6
Electrical Characteristics Protection Functions
+150 voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. Parameter Under Voltage Shut Down 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.3.7 5.3.8 Switch-ON Voltage Switch-OFF Voltage ON/OFF hysteresis Switch-ON Voltage Switch-OFF Voltage ON/OFF hysteresis Symbol Min. Limit Values Typ. Max. Unit Conditions
VUV(ON) VUV(OFF) VUV(HY) VOV(ON) 27.8 VOV(OFF) VOV(HY)
increasing decreasing
Over Voltage Lock
decreasing increasing
Current Limitation Current Limitation Detection level ICLH0 High Side Current Limitation Detection level ICLL0 Side Shut Time Thermal Shut Down Junction Temperature Thermal Switch Junction Temperature Thermal Hysteresis
13.5 13.5
Current Limitation Timing 5.3.9 5.3.10 5.3.11 5.3.12 5.3.13
tCLS TjSD TjSO
13.5
Thermal Shut Down
Reset Pulse (INH low) treset
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
5.4.1
Control Diagnostics Input Circuit
control inputs consist TTL/CMOS compatible schmitt triggers with hysteresis which control integrated gate drivers MOSFETs. Setting high enables device. this condition power switches switched depending status pin. deactivate both switches, low. external driver needed. BTN7930 interfaced directly microcontroller, long maximum ratings Chapter exceeded.
5.4.2
Dead Time Generation
bridge applications assured that highside lowside MOSFET conducting same time, connecting directly battery voltage GND. This assured circuit driver generating called dead time between switching MOSFET switching other. dead time generated driver automatically adjusted selected slew rate.
5.4.3
Adjustable Slew Rate
order optimize electromagnetic emission, switching speed MOSFETs adjustable external resistor. slew rate allows user optimize balance between emission power dissipation within application connecting external resistor GND.
5.4.4
Status Flag Diagnosis With Current Sense Capability
status used combined current sense error flag output. normal operation (current sense mode), current source connected status pin, which delivers current proportional forward load current flowing through active high side switch. high side switch inactive current flowing reverse direction current will driven except marginal leakage current IIS(LK). external resistor determines voltage output current. E.g. with nominal value current sense ratio kILIS IIS, resistor value leads A)V. case fault condition status output connected current source which independent load current provides IIS(lim). maximum voltage determined choice external resistor supply voltage. case current limitation IIS(lim) activated tCLS.
Normal operation: current sense mode
ESD-ZD
Fault condition: error flag mode
ESD-ZD
IIS~ ILoad IIS(lim) Sense output logic
IIS~ ILoad IIS(lim) Sense output logic
Figure
Sense Current Fault Current
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
[mA]
IIS(lim)
Current Sense Mode (High Side)
Error Flag Mode
ICLx
Figure Sense Current Load Current
5.4.5
Truth Table
Inputs Outputs Stand-by mode active active Shut-down LSS, activated, error detected lockout Stand-by mode, reset latch Shut-down with latch, error detected Switched mode, error detected1) Switched mode, error detected1) Mode
Device State Normal Operation
Over-Voltage (OV)
Under-Voltage (UV) Overtemperature Short Circuit Current Limitation Mode
Will return normal operation after
tCLS; Error signal reset after 2*tCLS (see Chapter 5.3.4)
Switches switched switched Status Flag Current sense mode Logic HIGH (error)
Inputs Logic Logic HIGH
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Block Description Characteristics
5.4.6
Electrical Characteristics Control Diagnostics
+150 voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. Parameter Control Inputs INH) 5.4.1 5.4.2 5.4.3 5.4.4 5.4.5 High level Voltage INH, level Voltage INH, Input Voltage hysteresis Input Current high level Input Current level Symbol Min. Limit Values Typ. 1.75 Max. 2.15 Unit Conditions
VINH(H) VIN(H) VINH(L) VIN(L) VINHHY VINHY IINH(H) IIN(H) IINH(L) IIN(L) kILIS
VINH VINH 13.5 VINH VINH
Current Sense 5.4.6 Current Sense ratio static oncondition kILIS
5.4.7 5.4.8 5.4.9
Maximum analog Sense Current, IIS(lim) Sense Current fault Condition Isense Leakage current Isense Leakage current, active high side switch
IISL IISH
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Application Information
Application Information
Note: following information given hint implementation device only shall regarded description warranty certain functionality, condition quality device.
Application Example
Microcontroller XC866
Reset
22µF
Voltage Regulator
47nF
Reverse Polarity Protection
470µF
4278G
100P03P3L
RIN1 RINH1
BTN7930
CSc1 470nF CSc2 470nF
BTN7930
RINH2
RIN2
RIS12
RSR1 0.51k
RSR2 0.51k
High Current H-Bridge
Figure Application Example: H-Bridge with BTN7930 Note: This simplified example application circuit. function must verified real application.
Layout Considerations
fast switching times high currents, special care taken layout. Stray inductances have minimized power bridge design necessary switched high power bridges. BTN7930 separate power ground logic ground. Therefore recommended assure that offset between ground connection slew rate resistor, current sense resistor ground device (GND minimized. BTN7930 used H-bridge bridge design, voltage offset between pins different devices should small well. ceramic capacitor from close each device recommended provide current switching phase inductance path therefore reducing noise ground bounce. reasonable value this capacitor would about digital inputs need protected from excess currents (e.g. caused induced voltage spikes) series resistors range
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Application Information
Half-bridge Configuration Considerations
Please note that, BTN7930 used half-bridge configuration with load connected between supply voltage exceeding Overvoltage Switch-OFF level VOV(OFF), implemented "Overvoltage Lock Out" feature leads automatically turning high side switch, while turning side switch, therefore connecting load independently current INH-pin signals (see also "Truth Table" Page 20). This will lead current flowing through load, otherwise configured. shall insured that power dissipated NovalithICdoes exceed maximum ratings. further explanations application note "BTN79x0 Over Voltage (OV) Operation".
Microcontroller XC866
Reset
22µF
Voltage Regulator
47nF
Reverse Polarity Protection
470µF
4278G
100P03P3L04
RINH
BTN7930
470nF
0.51k
High Current Half-Bridge
Figure Application Example: Half-Bridge with BTN7930 (Load GND) Note: This simplified example application circuit. function must verified real application.
Data Sheet
Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Package Outlines
Package Outlines
PG-TO263-7-1
±0.2 0.0.3
1±0.3
1.27 ±0.1 0.05
±0.5 ±0.3 7.551)
(15)
9.25 ±0.2
0.0.15 ±0.1 1.27 0.25
±0.1
MAX.
Typical Metal surface min. 7.25, metal surfaces plated, except area cut.
Footprint
GPT09114
10.8
16.15
0.47 8.42
Figure
PG-TO263-7-1 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020).
further information alternative packages, please visit website: Data Sheet
Dimensions Rev. 1.1, 2007-11-21
High Current Half Bridge BTN7930
Package Outlines
PG-TO220-7-11
±0.2 ±0.2
1.27 ±0.1
15.65 ±0.3
12.95
0.0.3
±0.2 -0.15
±0.3
±0.3
10.2 ±0.3
±0.1 0.0.15 1.27
±0.3
±0.1 ±0.4
0.25
±0.4
Typical Metal surface min. 7.25, 12.3 metal surfaces plated, except area cut.
Figure
PG-TO220-7-11 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020).
further information alternative packages, please visit website: Data Sheet
±0.3
Dimensions Rev. 1.1, 2007-11-21
0.05
9.25 ±0.2
High Current Half Bridge BTN7930
Package Outlines
PG-TO220-7-12
±0.2 ±0.2
1.27 ±0.1
±0.3 15.65 ±0.3
12.95
0.0.3
±0.2 -0.15
11±0.5
0.0.15
±0.5
±0.1 ±0.1
1.27
0.25
Typical Metal surface min. 7.25, 12.3 metal surfaces plated, except area cut.
Figure
PG-TO220-7-12 (Plastic Transistor Single Outline Package)
Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020).
further information alternative packages, please visit website: Data Sheet
9.25 ±0.2
Dimensions Rev. 1.1, 2007-11-21
0.05
High Current Half Bridge BTN7930
Revision History
Revision
Revision History
Date 2007-11-21 2007-11-06 Changes packages added; Initial version Data Sheet
Data Sheet
Rev. 1.1, 2007-11-21
Edition 2007-11-21 Published Infineon Technologies 81726 Munich, Germany 2007 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.

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