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BTM7810K TrilithIC Automotive Power BTM7810K Table
Top Searches for this datasheetData Sheet, Rev. 1.0, 2008 BTM7810K TrilithIC Automotive Power BTM7810K Table Contents Table Contents Overview Configuration Assignment Terms Block Diagram Circuit Description Input Circuit Output Stages Short Circuit Protection Overtemperature Protection Undervoltage Lockout Open Load Detection Status Flag Electrical Characteristics Absolute Maximum Ratings Functional Range Thermal Resistance Electrical Characteristics Application Information Package Outlines Revision History Data Sheet Rev. 1.0, 2008-05-15 TrilithIC BTM7810K Features Overview Quad D-MOS switch Free configurable bridge quad-switch Optimized motor management applications High side: typ. 25°C, max. 110°C side: typ. 25°C, max. 110°C Maximum peak current: typ. Very quiescent current: typ. Thermally optimized power package Operates Load GND-short-circuit-protection Overtemperature shut down with hysteresis Undervoltage detection with hysteresis Open load detection mode Status flag overtemperature Internal clamp diodes Isolated sources external current sensing Green Product (RoHS compliant) Qualified PG-TO263-15-1 Description BTM7810K part TrilithIC family containing three dies package: double high-side switch low-side switches. drains these three vertical DMOS chips mounted separated lead frames. sources connected individual pins, BTM7810K used H-bridge- well other configuration. double high-side switch manufactured SMART SIPMOS® technology which combines vertical DMOS power stages with CMOS circuitry control, protection diagnosis. achieve fast switching performance, low-side switches manufactured S-FET logic level technology. Type BTM7810K Data Sheet Package PG-TO263-15-1 Marking BTM7810K Rev. 1.0, 2008-05-15 BTM7810K Description Configuration Assignment Molding Compound DHVS Heat-Slug Heat-Slug Heat-Slug DHVS Figure Assignment BTM7810K (Top View) Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Description Table Definitions Functions Symbol Function DHVS DHVS connected Source low-side switch Analog input low-side switch connected Digital input high-side switch Status high-side switch open Drain output Source high-side switch Drain high-side switches power supply voltage Ground high-side switches Digital input high-side switch Status high-side switch open Drain output Source high-side switch Analog input low-side switch Source low-side switch connected Drain low-side switch Heat-Slug Drain high-side switches power supply voltage Heat-Slug Drain low-side switch Heat-Slug Pins written bold type need power wiring. Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Description Terms 470nF 100µF IFH1,2 IST1 DHVS VDSH2 IST2 VST1 VSTL1 VSTZ1 VST2 VSTL2 VSTZ2 VIH1 VIH2 IIH1 IGND ILKCL VDSH1 -VFH1 -VFH2 Diagnosis Biasing Protection IIH1 Gate Driver Gate Driver ISH2 IDL2 VUVON VUVOFF ISH1 IDL1 IIL1 VIL1 IIL2 VIL2 VDSL1 -VFL1 VDSL2 -VFL2 ISCP ISL1 ISCP ISL2 Figure Table Terms BTM7810K HS-Source-Current Named during Short Circuit Named during Leakage-Cond. ISH1,2 ISCP Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Description Block Diagram DHVS Diagnosis Biasing Protection Driver Figure Block Diagram BTM7810K Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Circuit Description Input Circuit control inputs IH1,2 consist TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers driven these stages convert logic signal into necessary form driving power output stages. inputs protected clamp-diodes. inputs connected gates standard N-channel vertical power-MOS-FETs. Output Stages output stages consist RDSON Power-MOS H-bridge. H-bridge configuration, D-MOS body diodes used freewheeling when communicating inductive loads. high-side switches used single switches, positive negative voltage spikes which occur when driving inductive loads limited integrated power clamp diodes. Short Circuit Protection outputs protected against short circuit ground short circuit over load. short circuit ground short circuit over load situation switches will limit load current. high power dissipation short circuit situation junction temperature will rise. over temperature protection function will switch output transistors junction temperature reaches over temperature shutdown limit. Overtemperature Protection high-side switches also incorporate over temperature protection circuit with hysteresis which switches output transistors sets status output low. Undervoltage Lockout When reaches switch-on voltage VUVON becomes active with hysteresis. high-side output transistors switched supply voltage drops below switch value VUVOFF. Open Load Detection open load detection BTM7810K works condition based voltage measurement source high side switch. order open load detection connected pull resistor. Because this pull resistor would connect bridge output supply needs disconnected whenever high side switch This done transistor shown application example (Figure "Application Example BTM7810K" Page 15). check open load: (both high side switches off) LOW, HIGH (only side switch Connect (open load pull transistor load connected properly will pull down voltage value close load disconnected resistor will pull voltage value close Vcc. voltage higher than open load detection voltage VOUT(OL) then will pulled down. Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Status Flag status flag outputs open drain outputs with zener-diode which require pull-up resistor, shown application circuit Figure "Application Example BTM7810K" Page Various errors listed table "Diagnosis" reported switching open drain output low. Table Flag Truthtable Diagnosis (valid only High-Side-Switches) Outputs stand-by mode switch2 active switch1 active both switches active detected detected Remarks Inputs Normal operation; identical with functional truth table Open load high-side switch Open load high-side switch Overtemperature high-side switch1 Overtemperature high-side switch2 Overtemperature both high-side switches detected detected detected detected detected detected Undervoltage Note: multiple simultaneous errors shown this table Inputs: Logic Logic HIGH don't care Outputs: Output tristate condition Output sink condition Output source condition Voltage level undefined Status: error Error Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Electrical Characteristics Absolute Maximum Ratings Absolute Maximum Ratings1) voltages with respect ground, positive current flowing into (unless otherwise specified) Pos. Parameter Symbol Limit Values min. High-Side-Switches (Pins DHVS, IH1,2 SH1,2) 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 5.1.7 5.1.8 5.1.9 5.1.10 5.1.11 5.1.12 5.1.13 5.1.14 5.1.15 5.1.16 5.1.17 5.1.18 Unit Remarks max. Supply voltage Supply voltage full short circuit protection HS-drain current2) HS-input current HS-input voltage Status pull voltage Status Output current Drain-Source-Clamp voltage LS-drain current2) VS(SCP) VDSL 25°C; Status Output Low-Side-Switches (Pins DL1,2, IL1,2 SL1,2) 25°C 25°C; 25°C; 25°C; LS-input voltage Junction temperature Storage temperature Tstg VESD VESD VESD VESD Temperatures Protection Input LS-Switch Input HS-Switch Status HS-Switch Output HS-Switch other pins connected Ground subject production test; specified design Single pulse Internally limited susceptibility according EIA/JESD22-A114-B (1.5k, 100pF) Note: Stresses above ones listed here cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Note: Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed continuous repetitive operation. Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Pos. 5.2.1 5.2.2 5.2.3 5.2.4 5.2.5 Functional Range Parameter Supply voltage Input voltage Input voltage Status output current Junction temperature Symbol Limit Values min. max. After rising above VUVON Unit Remarks VUVOFF Note: Within functional range operates described circuit description. electrical characteristics specified within conditions given related electrical characteristics table Pos. 5.3.1 5.3.2 5.3.3 Thermal Resistance Parameter LS-junction case1) HS-junction case Symbol Min. Limit Values Typ. Max. 1.05 1.45 Unit Conditions Junction ambient RthJA Tj(HS) (P(HS)+ P(LS)) RthJC RthJC RthJA subject production test, specified design. Specified RthJA value according Jedec JESD51-2,-5,-7 natural convection 2s2p board; Product (chip+package) simulated 76.2 114.3 board with inner copper layers 70µm 35µm Cu). Where applicable thermal array under exposed contacted first inner copper layer. Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Electrical Characteristics Electrical Characteristics ISH1 ISH2 ISL1 ISL2 (unless otherwise specified) Pos. Parameter Symbol Limit Values min. typ. max. Unit Test Condition Current Consumption HS-switch 5.4.1 Quiescent current 5.4.2 5.4.3 5.4.4 Supply current; HS-switch active Supply current; both HS-switches active Leakage current high-side switch Leakage current through logic free wheeling condition Input current Leakage current low-side switch 5.4.5 ILKCL VDSL VDSL increasing decreasing VUVON VUVOFF 110°C2) °C2) Current Consumption LS-switch 5.4.6 5.4.7 Under Voltage Lockout HS-switch 5.4.8 5.4.9 5.4.10 5.4.11 5.4.12 5.4.13 Switch-ON voltage Switch-OFF voltage Switch ON/OFF hysteresis Inverse diode high-side switch; Forward-voltage Inverse diode low-side switch; Forward-voltage Static drain-source on-resistance high-side switch VUVON VUVOFF VUVHY Output stages 5.4.14 Static drain-source on-resistance low-side switch Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Electrical Characteristics ISH1 ISH2 ISL1 ISL2 (unless otherwise specified) Pos. Parameter Symbol Limit Values min. typ. max. Unit Test Condition Short Circuit high-side switch 5.4.15 Initial peak current1) tdel VDSH ISCP 25°C 110°C2) VDSL Short Circuit high-side switch 5.4.16 5.4.17 5.4.18 5.4.19 5.4.20 5.4.21 5.4.22 5.4.23 5.4.24 5.4.25 5.4.26 Output pull-down-resistor Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis output voltage Leakage current Zener-limit-voltage Status change after positive input slope with open load2) Status change after negative input slope with open load2) Status change after positive input slope with overtemperature2) Status change after negative input slope with overtemperature2) Open Load Detection Voltage TjSD TjSO Status Flag Output high-side switch td(SToffo+) td(SToffo-) td(STofft+) td(STofft-) Open Load Detection Condition 5.4.27 5.4.28 5.4.29 5.4.30 5.4.31 5.4.32 5.4.33 5.4.34 5.4.35 5.4.36 VOUT(OL) tOFF dV/dtON -dV/dtOFF td(on) td(off) Switching times high-side switch Turn-ON-time Turn-OFF-time RLoad Slew rate Slew rate Switching times low-side switch Turn-ON Delay Time Rise Time Switch-OFF Delay Time Fall Time resistive load ISL= VDSL=12V Gate charge low-side switch Input source charge; VDSL=12 Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Electrical Characteristics ISH1 ISH2 ISL1 ISL2 (unless otherwise specified) Pos. 5.4.37 5.4.38 Parameter Input drain charge; Input charge total; Symbol Limit Values min. typ. max. Unit Test Condition 5.4.39 Input plateau voltage; V(plateau) VDSL=12 VDSL=12 VDSL=12 Control Inputs high-side switches 5.4.40 5.4.41 5.4.42 5.4.43 5.4.44 5.4.45 5.4.46 5.4.47 H-input voltage L-input voltage Input voltage hysteresis H-input current L-input current Input series resistance Zener limit voltage Gate-threshold-voltage High High Control Inputs IL1, When Vs>18V peak short circuit current significantly lower. subject production test; specified design Note: listed characteristics ensured over operating range integrated circuit. Typical characteristics specified mean values expected over production spread. otherwise specified, typical characteristics apply given supply voltage. Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Application Information Note: following simplified application examples given hint implementation device only shall regarded description warranty certain functionality, condition quality device. function described circuits must verified real application Watchdog Reset 4278G 47nF VS=12V 22µF 10µF DHVS BCR192W replaced diode when Short detection needed 560Ohm Diagnosis Biasing Protection Gate Driver optional open load Gate Driver XC866 Figure Application Example BTM7810K Data Sheet Rev. 1.0, 2008-05-15 BTM7810K Package Outlines 21.6 ±0.2 1±0.2 1.27 ±0.1 0.05 8.18 ±0.15 5.56 ±0.15 1±0.3 8.21) (15) 9.25 ±0.2 8.41) 14x1.4 0.0.15 ±0.1 ±0.5 ±0.3 ±0.1 max. 0.25 Typical metal surfaces plated, except area cut. Footprint 21.6 Figure PG-TO263-15-1 (Plastic Transistor Single Outline Package) Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020). further information alternative packages, please visit website: Data Sheet Dimensions Rev. 1.0, 2008-05-15 BTM7810K Rev. Date Revision History Changes Initial Version 2008-05-15 Data Sheet Rev. 1.0, 2008-05-15 Edition 2008-05-15 Published Infineon Technologies 81726 Munich, Germany 5/14/08 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. 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