Glass pass ivated chip Superfast itchin time high efficiency reverse l
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MUR860
Glass pass ivated chip Superfast itchin time high efficiency reverse leakage curr surge capacity
Maximum Ratings
Operating Junction Temperature: 55°C +150°C Storage Temperature: -55°C +150°C Device Marking Maximum Recurrent Peak Reverse Voltage 600V Maximum Voltage Maximum Blocking Voltage 600V
Super Glass Passiv ated Rectif Volts
TO-220AC
Catalog Number
MUR860
MUR860
420V
Electrical Characteristics 25°C Unless Otherwise Specified
Average Forward Current Peak Forward Surge Current Maximum Forward Voltage Drop Element IF(AV) IFSM 8.0A 100°C
CASE
125A half sine
1.80V 25°C 1.50V 125°C
14.22 9.65 2.54 5.84 9.65 -12.70 4.83 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 5.33 1.14 0.64 4.09 4.83 1.40 2.92
Maximum Reverse Current Rated Blocking Voltage Maximum Reverse Recovery Time
500uA
25°C 125°C
50ns
IF=0.5A, IR=1.0A, Irr=0.25A
INCHES .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -.250 .500 .580 .190 .210 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115
*Pulse test: Pulse width µsec, Duty cycle
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MUR860
Figure Typical Forward Characteristics 25°C Amps TA=25°C µAmps .006 .002 .001 Volts Instantaneous Reverse Leakage Current MicroAmperesversus Percent Rated Peak Reverse Voltage Volts Figure Typical Reverse Characteristics
Volts Instantaneous Forward Current Amperesversus Instantaneous Forward Voltage Volts Figure Forward Derating Curve
Figure Maximum Non-Repetitive Forward Surge Current
Amps
Amps
Single Phase, Half Wave 60Hz Resistive Inductive Load Average Forward Rectified Current Amperes versus Case Temperature Cycles Peak Forward Surge Current Amperesversus Number Cycles 60Hz Cycles
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