v03.1203 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, Broadband swi
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HMC232
v03.1203
GaAs MMIC SPDT NON-REFLECTIVE SWITCH,
Broadband switch applications: Fiber Optics Microwave Radio Military Space
Features
High Isolation: Insertion Loss: Non-Reflective Design Size: 2.05 1.04 Direct Replacement HMC132
SWITCHES CHIP
Test Equipment VSAT
Functional Diagram
General Description
HMC232 broadband non-reflective GaAs MESFET SPDT MMIC chip. Covering GHz, switch features over isolation lower frequencies over higher frequencies implementation on-chip hole structures. switch operates using negative control voltage logic lines (A&B) -5/0V requires Vee. Alternate control pads provided ease implementation. data shown tested with chip test fixture connected 0.025 mil) diameter wire bonds mils) length. This product form, functional replacement HMC132.
Electrical Specifi cations, +25° With 0/-5V Control, System
Parameter Insertion Loss Frequency State" Min. Typ. Max. Units
Isolation
Return Loss
Return Loss RF1, Input Power Compression
"Off State"
Input Third Order Intercept (Two-Tone Input Power= Each Tone, Tone Separation) Switching Characteristics tRISE, tFALL (10/90% tON, tOFF (50% 10/90%
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC232
v03.0907
GaAs MMIC SPDT NON-REFLECTIVE SWITCH,
Insertion Loss Temperature
INSERTION LOSS (dB) FREQUENCY (GHz)
Isolation
ISOLATION (dB) FREQUENCY (GHz)
SWITCHES CHIP
Return Loss
RF1, RF1,
Input Compression Point
RETURN LOSS (dB)
P1dB (dBm)
Compression Point Compression Point
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Third Order Intercept Point
(dBm) FREQUENCY (GHz)
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC232
v03.0907
GaAs MMIC SPDT NON-REFLECTIVE SWITCH,
Control Voltages
State Bias Condition -0.2V Max. Typ. Typ.
Absolute Maximum Ratings
Input Power (Vctl -5V) (0.5 GHz) Control Voltage Range Channel Temperature Thermal Resistance -7.5 °C/W +150 Class
High
SWITCHES CHIP
Storage Temperature Operating Temperature Sensitivity (HBM)
Truth Table
Control Input High High Signal Path State
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Caution: "Hot Switch" power levels greater than (Vctl 0/-5 Vdc).
Outline Drawing
NOTES:
Packaging Information
Standard WP-17 (Waffle Pack)
DIMENSIONS INCHES [MILLIMETERS] BOND PADS 0.004" SQUARE TYPICAL BOND SPACING CENTER CENTER .006" BACKSIDE METALIZATION: GOLD BOND METALIZATION: GOLD BACKSIDE GROUND THICKNESS .004" CONNECTION REQUIRED UNLABLED BOND PADS
Alternate
Refer "Packaging Information" section packaging dimensions. alternate packaging information contact Hittite Microwave Corporation.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC232
v03.0907
GaAs MMIC SPDT NON-REFLECTIVE SWITCH,
Suggested Driver Circuit
SWITCHES CHIP
Descriptions
Number Function Description truth table control voltage table. Alternate control pads provided. Interface Schematic truth table control voltage table. Alternate control pads provided. RF1, RFC, This coupled matched Ohms. Blocking capacitors required line potential equal bottom must connected ground.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC232
v03.0907
GaAs MMIC SPDT NON-REFLECTIVE SWITCH,
Assembly Diagram
SWITCHES CHIP
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC232
v03.0907
GaAs MMIC SPDT NON-REFLECTIVE SWITCH,
Mounting Bonding Techniques Millimeterwave GaAs MMICs
should attached directly ground plane eutectically with conductive epoxy (see general Handling, Mounting, Bonding Note). Microstrip transmission lines 0.127mm mil) thick alumina thin film substrates recommended bringing from chip (Figure 0.254mm mil) thick alumina thin film substrates must used, should raised 0.150mm mils) that surface coplanar with surface substrate. accomplish this attach 0.102mm mil) thick 0.150mm mil) thick molybdenum heat spreader (moly-tab) which then attached ground plane (Figure Microstrip substrates should brought close possible order minimize bond wire length. Typical die-to-substrate spacing 0.076mm mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
Ground Plane
SWITCHES CHIP
Handling Precautions
Follow these precautions avoid permanent damage. Storage: bare placed either Waffle based protective containers, then sealed protective shipment. Once sealed protective been opened, should stored nitrogen environment. Cleanliness: Handle chips clean environment. attempt clean chip using liquid cleaning systems. Static Sensitivity: Follow precautions protect against strikes. Transients: Suppress instrument bias supply transients while bias applied. shielded signal bias cables minimize inductive pick-up.
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
Ground Plane
General Handling: Handle chip along edges with vacuum collet with sharp pair bent tweezers. surface chip fragile bridges should touched with vacuum collet, tweezers, fingers.
0.150mm (0.005") Thick Moly 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure
Mounting
chip back-metallized mounted with AuSn eutectic preforms with electrically conductive epoxy. mounting surface should clean flat.
Epoxy Attach: Apply minimum amount epoxy mounting surface that thin epoxy fillet observed around perimeter chip once placed into position. Cure epoxy manufacturer's schedule.
Wire Bonding
Ball wedge bond with 0.025 mil) diameter pure gold wire bias, IF2) Ribbon Bond ports) 0.076 0.013 mil) size recommended. Thermosonic wirebonding with nominal stage temperature ball bonding force grams wedge bonding force grams recommended. minimum level ultrasonic energy achieve reliable wirebonds. Wirebonds should started chip terminated package substrate. bonds should short possible <0.31 mils).
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
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