FTF3041M Full-Frame Image Sensor Preliminary Product Specificatio

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FTF3041M Full-Frame Image Sensor Preliminary Product Specificatio

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IMAGE SENSORS
FTF3041M Full-Frame Image Sensor
Preliminary Product Specification 2008,
DALSA Professional Imaging
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
Table Contents
FTF3041M
Description. Architecture FTF3041M. Operating Conditions. Absolute Maximum Ratings Voltage Settings Clock Level Conditions. Timing Diagrams Performance. Application Information Device Handling Configuration. Package Information Order Codes
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
Image format
FTF3041M
active pixels (3072H 4096V) >94% fill factor Excellent anti-blooming fast electronic shuttering High quantum efficiency dark current fixed pattern noise Horizontal vertical binning Vertical sub-sampling High linear dynamic range (>72dB) Mirrored split readout Bottom amplifiers optimized high charge capacity amplifiers optimized high sensitivity noise High speed readout output RoHS compliant
FTF3041M monochrome full-frame image sensor designed medical scientific applications, with very dark current wide linear dynamic range over true bits. High quantum efficiency achieved transparent membrane poly-silicon electrodes. Metal strapping allows high-speed vertical horizontal transport. amplifiers optimized high charge capacity bottom amplifiers optimized high sensitivity noise make FTF3041M best wide range high-end applications. readout speed frames second possible when using only output amplifier. using dual outputs, frame rate increases accordingly. On-chip charge binning offers significant increases speed, signalto-noise ratio sensitivity when reading lower resolution. device structure shown figure
Description
Output register Device structure Optical size: Chip size: Pixel size: Active pixels: Total pixels: Optical black pixels: Overscan pixels: Dummy register cells: Optical black lines: Dummy lines: 36.864 49.152 38.95 51.001 3072 4096(V) 3120 4144 Left: Right Left: Right Left: Right: Top: Bottom: Top: Bottom: dummy lines black
Image section
4096 active lines
4144 lines
3072 active pixels
black dummy lines 3120 Output register bottom
Figure Device structure.
2008,
Architecture FTF3041M
optical centers pixels image section form square grid. charge generated integrated this section. Readout registers located below above image section. After integration time, image charge shifted line time upper lower register. left right half each register controlled independently. This enables either single
split readout. During vertical transport, gates separate cells register. central gates lower upper registers part left half sensor quadrants respectively). Both registers used vertical binning. Each register contains summing gate both ends that used horizontal binning (see figure bottom register ends both sides with identical amplifiers optimized high charge capacity. register ends both sides with identical amplifiers optimized noise high sensitivity.
IMAGE SECTION Image diagonal (active video only) Aspect ratio Active image width height Pixel width height Geometric fill factor Image clock pins Capacity each clock phase Number active lines Number black reference lines Number dummy black lines Total number lines Number active pixels line Number over scan (timing) pixels line Number black reference pixels line Total number pixels line 61.44 36.864 49.152 >94% pins (A1.A4) 38nF 4096 (=2x8) (=2x16) 4144 3072 (=2x4) (=2x20) 3120
READOUT REGISTERS Output buffers each corner Number readout registers Number dummy cells register Number register cells register Readout register clock pins Capacity each C-clock phase Overlap capacity between neighboring C-clocks Output register Summing Gates Capacity each Reset Gate clock phases Capacity each Three-stage source follower (2x11) 3142 (3120 pins register (C1.C3) 40pF pins (SG), output 15pF pins (RG), output 15pF
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
OUT_Z
OUT_Y
dummy black
4096 active
dummy black
OUT_W
OUT_X
dummy pixels
black overscan
image pixels
overscan black
dummy pixels
Figure Detailed internal structure.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
Operating Conditions
FTF3041M
When applicable operating conditions listed separately W,X-output Y,Z-output.
Absolute Maximum Ratings
ABSOLUTE MAXIMUM RATINGS1 GENERAL: Storage temperature Ambient temperature during operation Voltage between gates current through clock (absolute value) current short circuit protection) VOLTAGES RELATION VPS: VNS, SFD, VCS, other pins (except VOLTAGES RELATION VNS: SFD, VCS, SFS, other pins (except VOLTAGES RELATION SFD: Voltage
UNIT
-0.2 -0.5
+0.2 +0.5 +0.5 +0.5
During Charge reset allowed exceed maximum rating levels.
Voltage Settings
CONDITIONS1, W,X-OUTPUT
19.5 4.75 19.5
TYPICAL adjusted
20.5 5.25 20.5
[mA]
N-substrate P-substrate Source Follower Drain Source Follower Source Current Source Output Gate Reset Drain
voltages relation SFS; typical values according test conditions. Power-up sequence: VNS, SFD, VPS, others. difference between should exceed during power down. voltage optimal Vertical Anti-blooming (VAB), should adjustable between minimum maximum values.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
CONDITIONS1, Y,Z-OUTPUT VNS3
19.5 4.75 19.5
TYPICAL adjusted
20.5 5.25 20.5
[mA]
N-substrate P-substrate Source Follower Drain Source Follower Source Current Source Output Gate Reset Drain
voltages relation SFS; typical values according test conditions. Power-up sequence: VNS, SFD, VPS, others. difference between should exceed during power down. voltage optimal Vertical Anti-blooming (VAB), should adjustable between minimum maximum values.
Clock Level Conditions
following voltages should applied operating sensor. clocking scheme gates integrating gate blocking should used.
CLOCK LEVEL CONDITIONS1 W,X-OUTPUT IMAGE CLOCKS/ TRANSFER GATES A-clock amplitude during integration hold A-clock amplitude during vertical transport (duty cycle=5/8) A-clock level Charge reset (CR) level A-clock3 OUTPUT REGISTER CLOCKS: C-clock amplitude (duty cycle during hor. transport=3/6) C-clock level Summing Gate (SG) amplitude Summing Gate (SG) level OTHER CLOCKS: Reset Gate (RG) amplitude Reset Gate (RG) level Charge Reset (CR) pulse VNS3
TYPICAL
UNIT
4.75 4.75
5.25
voltages relation SFS; typical values according test conditions. Transfer gate should clocked during normal transport held during line shift sub-sample image. Charge Reset achieved ways which first method preferred: typical A-clock level applied image clocks proper additional Charge Reset pulse required minimum level applied image clocks simultaneously.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
CLOCK LEVEL CONDITIONS1 Y,Z-OUTPUT IMAGE CLOCKS/ TRANSFER GATES2 A-clock amplitude during integration hold A-clock amplitude during vertical transport (duty cycle=5/8) A-clock level Charge reset (CR) level A-clock3 OUTPUT REGISTER CLOCKS: C-clock amplitude (duty cycle during hor. transport=3/6) C-clock level Summing Gate (SG) amplitude Summing Gate (SG) level OTHER CLOCKS: Reset Gate (RG) amplitude Reset Gate (RG) level Charge Reset (CR) pulse VNS3
TYPICAL
UNIT
4.75 4.75
5.25
voltages relation SFS; typical values according test conditions. Transfer gate should clocked during normal transport held during line shift sub-sample image. Charge Reset achieved ways which first method preferred: typical A-clock level applied image clocks proper additional Charge Reset pulse required minimum level applied image clocks simultaneously.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
Timing Diagrams
CHARACTERISTICS Horizontal frequency (1/Tp) Vertical frequency Charge Reset (CR) time Rise fall times: image clocks register clocks (C)2 summing gate (SG) reset gate (RG)
FTF3041M
TYPICAL Line time
UNIT
TP=1 clock period Duty cycle=50%
integration
4128 image lines
idle
integration
dummy
black
4096 active lines
black
4118 4119 4120 4121 4122 4127 4128
puls/CR Trig_in high TG/A1
REMARKS applied during first line after transition from Trig_in integrating during high period Trig_in After readout sequence timing will into idle mode.
Figure Frame timing diagram.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
Pixelnumbers represent beginning concerning pixel
Sensor Output
Active Pixels
1536 dummy
black
Active Pixels
1536 overscan
high TG/A1
7.5us
27.5us 7.5us 7.5us 7.5us 15us
REMARKS Thorizontal 2259 1/25E6 90us Vertical transport frequency 50kHz
Figure Vertical transport. Dual output.
2008,
10us
12.5us
27.5us
Falling edge pixel 2259
Rising edge pixel
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
3795 3799
Pixelnumbers represent beginning concerning pixel
Sensor Output
Active Pixels
3072
black timing dummy
black
Active Pixels
3072 overscan
high TG/A1
7.5us
27.5us 7.5us 7.5us 7.5us 15us
REMARKS Thorizontal 3819 1/25E6 153us Vertical transport frequency 50kHz
Figure Vertical transport, single output.
2008,
10us
12.5us
27.5us
Falling edge pixel 3819
Rising edge pixel
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
SINGLE OUTPUT
clocked with rising edge
dummy
black
overscan
3072 active
overscan
black
DUAL OUTPUT
dummy
black
overscan
1536 active
SENSOR SINGLE OUTPUT Left SINGLE OUTPUT Right DUAL OUTPUT
40ns 20ns
Sensor output
13.33ns 26.67ns 6.67ns
PHIC'S 25MHz
black signal
Figure Horizontal read out. Single Dual output.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
Performance
test conditions performance characteristics follows: values measured using typical operating conditions. adjusted possible while maintaining proper vertical anti-blooming Sensor temperature=60°C (333K) Horizontal transport frequency=25MHz Vertical transport frequency=50kHz Integration time=10ms light source lamp 3200K conjunction with neutral density filters 1.7mm thick BG40 infrared cut-off filter.
LINEAR OPERATION W,X-OUTPUT Charge Transfer Efficiency1 vertical Charge Transfer Efficiency1 horizontal Image Resolution (MTF) lp/mm Peak Quantum Efficiency Green Sensitivity @3200K, filter pass shading2 Random Non-Uniformity (RNU)
TYPICAL 0.999999 0.999999
UNIT
kel/lux.sec
Charge Transfer Efficiency values tested evaluation expressed value gate transfer. Pass Shading defined ratio one- value pixel blurred image (low-pass) mean signal value. defined ratio one- value high pass image mean signal value nominal light.
LINEAR OPERATION Y,Z-OUTPUT Charge Transfer Efficiency vertical Charge Transfer Efficiency1 horizontal Image Resolution (MTF) lp/mm Peak Quantum Efficiency Green Sensitivity @3200K, filter pass shading
TYPICAL 0.999999 0.999999
UNIT
kel/lux.sec
Random Non-Uniformity (RNU)3
Charge Transfer Efficiency values tested evaluation expressed value gate transfer. Pass Shading defined ratio one- value pixel blurred image (low-pass) mean signal value. defined ratio one- value high pass image mean signal value nominal light.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
Quantum Efficiency (QE) function wavelength
Wavelength
Figure Quantum efficiency function wavelength.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
LINEAR/SATURATION USING OUTPUT Full-well capacity saturation level (Qmax)1 Full-well capacity linear operation (Qlin)2 Linear dynamic range Charge handling capacity3 Overexposure4 handling
TYPICAL
UNIT
>200
Qmax level
USING OUTPUT Full-well capacity saturation level (Qmax)1 Full-well capacity linear operation (Qlin)2 Linear dynamic range Charge handling capacity3
Overexposure4 handling >200 Qmax level Qmax determined from low-pass filtered image. linear full-well capacity Qlin calculated from linearity test (see dynamic range). evaluation test guarantees linearity. Charge handling capacity largest charge packet that handled horizontal register. Overexposure over entire area while maintaining good vertical anti-blooming (VAB). tested measuring dark line.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
OUTPUT BUFFERS BOTTOM Conversion factor Mutual conversion factor matching (ACF) Supply current Bandwidth (Rload=3.3k) Output impedance buffer (Rload=3.3k, Cload=2pF) readout noise over full bandwidth after OUTPUT BUFFERS Conversion factor Mutual conversion factor matching (ACF)1 Supply current Bandwidth (Rload=3.3k) Output impedance buffer (Rload=3.3k, Cload=2pF) readout noise over full bandwidth after
TYPICAL
UNIT µV/el.
µV/el.
TYPICAL
UNIT µV/el. µV/el.
Matching outputs bottom specified with respect reference measured operating point (Qlin/2)
DARK CONDITION W,X-OUTPUT Dark current level 20°C Dark current level 60°C Fixed Pattern Noise (FPN) Y,Z-OUTPUT Dark current level 20°C Dark current level 60°C Fixed Pattern Noise (FPN)
TYPICAL
UNIT
1100
1600
pA/cm2. pA/cm2. el/s
1100
1600
pA/cm2. pA/cm2. el/s
one- value high-pass image.
1000
Dark Current (pA/cm2)
Temp. (oC) Dark current versus temperature
2008,
Figure Dark current versus temperature.
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
Application Information
Current handling purposes drain holes that generated during exposure sensor light. Free electrons either transported connection and, excessive (from overexposure), free electrons drained VNS. current should flow into connection sensor. During high overexposure total current 15mA through connections together expected. emitter follower circuit diagram (figure serves these current requirements. drains superfluous electrons result overexposure. other words, only sinks current. During high overexposure, total current 15mA through connections together expected. emitter follower circuit diagram meets these current requirements. clamp circuit, consisting diode electrolytic capacitor, enable addition Charge Reset (CR) pulse otherwise stable voltage. protect CCD, current resulting from this pulse should limited. This accomplished designing pulse generator with rather high output impedance. Decoupling voltages voltages (not VNS, which additional pulses described above) should decoupled with 100nF decoupling capacitor. This capacitor must mounted close possible sensor pin. Further noise reduction bandwidth limiting) achieved resistors connections between sensor voltage supplies. electrons that build charge packets that will reach floating diffusions only small current, which will float through VRD. Therefore, large series resistor connection used. Outputs limit on-chip power dissipation, output buffers designed with open source outputs. Outputs used should therefore loaded with current source more simply with resistance GND. order prevent output (which typically output impedance about 400) from bandwidth limitation result capacitive loading, load output with emitter follower built from high-frequency transistor. Mount base this transistor close possible sensor keep connection between emitter next stage short. output buffer easily destroyed ESD. using this
FTF3041M
emitter follower, this danger suppressed; reintroduce this danger measuring directly output sensor with oscilloscope probe. Instead, measure output emitter follower. Slew rate limitation avoided avoiding too-small quiescent current emitter follower; about 10mA should job. collector emitter follower should uncoupled properly suppress Miller effect from base-collector capacitance. output load resistor 3.3k typically results bandwidth 120MHz. Device protection output buffers FTF3041M likely damaged rises above time. This danger most realistic during power-on power-off camera. voltage should always lower than voltage. Never exceed maximum output current. This damage device permanently. maximum output current should limited 10mA. especially aware that output buffers these image sensors very sensitive damage. Because fact that CCDs built n-type substrate, dealing with some parasitic transistors. avoid activation these transistors during switch-on switch-off camera, recommend application diagram figure Unused sections reduce power consumption, following steps taken. Connect unused output register pins (C1.C3, unused pins zero Volts. Color processing (for color sensors) order guarantee true colors, always external filter type CM500(0)s, similar. cover glass itself filter. More information Detailed application information provided application note AN11.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
From V-Driver
VSFD
FTF3041M
From
BAS28 100n 100n NS_CR 100n
NS_CR BAT74
100n
OUTZ NS_CR
100n
NS_CR BAS28
BAS28
100n
BAT74
BAT74
BAT74 28K8
image sensor
NS_CR 100n 100n
NS_CR
BAS28 100n
BAS28
100n 100n BFR92
100n
100n
OUTY
100n
100E
BC860C
VSFD
DRIVER
100K
100n BAS28
NS_CR BAS28 100n
100n
Figure Application diagram.
74ACT04 DRIVER
100K
BAS28
74ACT04 DRIVER
BAS28 100K
BAS28 100K
BAS28 100K BAS28 100K 74ACT04
BAS28 100K
BAS28 100K
adjust resistor values match input voltage input voltage range front
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
Device Handling
image sensor device that destroyed electro-static discharge (ESD). Therefore, device should handled with care. Always store device with short-circuiting clamps conductive foam. Always switch electric signals when inserting removing sensor into from camera (the protection image sensor process less effective than protection standard CMOS circuits). Being high quality optical device, important that cover glass remain undamaged. When handling sensor, finger cots. When cleaning glass recommend using ethanol. other liquids strongly discouraged: cleaning liquid evaporates quickly, rubbing likely cause damage. cover glass coating damaged other liquids.
window carefully slowly. rubbing window cause electro-static charges scratches that destroy device.
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
Configuration
FTF3041M mounted Grid Array (PGA) package with pins 20x25 grid 51.3 64.0mm2. position (quadrant marked with gold SYMBOL FUNCTION substrate substrate substrate substrate Source Follower Drain Source Follower Source Current Source Output Gate Reset Drain Image Clock Transfer Gate (Phase Image Clock (Phase Image Clock (Phase Image Clock (Phase Image Clock (Phase Register Clock (Phase Register Clock (Phase Register Clock (Phase Summing Gate Reset Gate Output
FTF3041M
package. image clock phases quadrants internally connected (e.g. phase pins internally connected).
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
FTF3041M
INDICATES LOCATION
Figure configuration (top view)
Figure configuration (top view)
2008,
DALSA Professional Imaging
Preliminary Product Specification
Full-Frame Image Sensor
Package Information
Package information
cover glass image sensor 1.8±0.18 Chip bottom package 2.7±0.15 Image sensor Cover glass Cover glass 1.0±0.05
FTF3041M
32±0.15
Image sensor
64±0.64
1.4/100
view Index mark
25.65±0.15 51.3±0.51
Cover glass
Stand-off
(2.54) 0.46±0.05
1.27±0.15
4.57±0.15
60.96±0.60
center image area. Position 25.65 0.15 left edge package 32.00 0.15 upper edge package 0.15 bottom package Angle rotation: less than Sensor flatness: (P-V) Cover glass: Hoya Thickness cover glass: 0.05 Refractive index: 1.53 Double sided coating (430-660 reflection Hermetically sealed package drawing units
Bottom view
48.26
0.27
Figure Mechanical drawing package
Figure Mechanical drawing package
2008,
Order Codes
sensor ordered using following code:
Description
FTF3041M/TG FTF3041M/EG FTF3041M/IG FTF3041M/HG
FTF3041M sensors Quality Grade
Test grade Economy grade Industrial grade High grade
Order Code
9922-157-91131 9922-157-91151 9922-157-91121 9922-157-91111
Defect Specifications
image sensor ordered specific quality grade. grading defined with maximum amount pixel defects, column defects, defects cluster defects, both illuminated non-illuminated conditions. detailed grading information, please contact your local DALSA representative.
More Information
more detailed information this other products, contact your local visit site
DALSA Professional Imaging
Sales Department High Tech Campus 5656 Eindhoven Netherlands Tel: 9009 Fax: 9015 www.dalsa.com/sensors sales.sensors@dalsa.com
This information subject change without notice.

FTF3041M Full-Frame Image Sensor Preliminary Product Specificatio

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