StarMOST Power MOSFET VDSS 650V ID25 4.5A RDS(ON) Descriptio
|
|
|
Top Searches for this datasheet
SSFP5N65
StarMOST Power MOSFET
VDSS 650V ID25 4.5A RDS(ON)
Description
StarMOS generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimises JFET effect, increases packing density reduces on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Pin1-Gate Pin2-Drain Pin1-Source
Application
Switching application
Absolute Maximum Ratings
Parameter ID@Tc=25 ID@Tc=100C PD@TC=25C dv/dt TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
Max. +150 300(1.6mm from case) in(1.1N
Units V/ns
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range
Soldering Temperature, seconds Mounting Torque,6-32 screw
Thermal Resistance
Parameter Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. Typ. 0.50 Max. 1.25 62.5 Units
SSFP5N65
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 C(unless otherwise specified)
Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS td(on) td(off) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
V(BR)DSS/TJ Breakdown Voltage Temp.Coefficient
Min.
Typ.
Max. Units -100
Test Conditions VGS=0V,ID=250A
Reference 25C,ID=250A VGS=10V,ID=2.25A VDS=VGS,ID=250A VDS=40V,ID=2.25A VDS=650V,VGS=0V VDS=480V,VGS=0V,TJ=150C VGS=30V VGS=-30V
ID=4.5A VDS=480V VGS=10V VDD=300V ID=4.5A RG=25 Between lead, 6mm(0.25in.) from package center contact VGS=0V VDS=25V f=1.0MHZ
Ciss Coss Crss
Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time Min. Typ. Max. Units Test Conditions MOSFET symbol showing integral reverse junction diode. TJ=25C,IS=4.5A,VGS=0V TJ=25C,IF=4.5A di/dt=100A/s
Intrinsic turn-on time negligible (turn-on dominated
Notes: Repetitive rating;pulse width limited max.junction temperature(see figure
TJ25 Pulse width300S; duty cycle2%
18.9mH, =4.5 50V,
Starting 25°C
Other recent searches
ZFDC-20-50+ - ZFDC-20-50+ ZFDC-20-50+ Datasheet
IS42SM83200D - IS42SM83200D IS42SM83200D Datasheet
IS42SM16160D - IS42SM16160D IS42SM16160D Datasheet
IS42SM32800D - IS42SM32800D IS42SM32800D Datasheet
IS42RM83200D - IS42RM83200D IS42RM83200D Datasheet
IS42RM16160D - IS42RM16160D IS42RM16160D Datasheet
IS42RM32800D - IS42RM32800D IS42RM32800D Datasheet
IS42SMxxx - IS42SMxxx IS42SMxxx Datasheet
IS42RMxxx - IS42RMxxx IS42RMxxx Datasheet
IRF6709S2TRPbF - IRF6709S2TRPbF IRF6709S2TRPbF Datasheet
IRF6709S2TR1PbF - IRF6709S2TR1PbF IRF6709S2TR1PbF Datasheet
CVCO55BE-1350-1400 - CVCO55BE-1350-1400 CVCO55BE-1350-1400 Datasheet
74OL6000 - 74OL6000 74OL6000 Datasheet
74OL6001 - 74OL6001 74OL6001 Datasheet
74OL6010 - 74OL6010 74OL6010 Datasheet
74OL6011 - 74OL6011 74OL6011 Datasheet
3DD13002 - 3DD13002 3DD13002 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
