GaAs PHEMT MMIC NOISE AMPLIFIER, NOISE AMPLIFIERS CHIP Typic

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GaAs PHEMT MMIC NOISE AMPLIFIER, NOISE AMPLIFIERS CHIP Typic

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HMC516
GaAs PHEMT MMIC NOISE AMPLIFIER,
NOISE AMPLIFIERS CHIP
Typical Applications
HMC516 ideal driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Test Equipment Sensors Military Space
Features
Noise Figure: Gain: OIP3: Single Supply: Matched Input/Output Size: 2.52 1.32
Functional Diagram
General Description
HMC516 chip high dynamic range GaAs PHEMT MMIC Noise Amplifier (LNA) which covers frequency range. HMC516 provides small signal gain, noise figure output greater than dBm. chip easily integrated into hybrid assemblies small size. data tested with chip test fixture connected 0.075mm mil) ribbon bonds minimal length 0.31 mil). 0.025 mil) diameter bondwires also used make RFIN RFOUT connections.
Electrical Specifi cations, +25°
Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd +3V) Min. Typ. 19.5 0.02 0.03 Max. Min. Typ. 20.5 0.02 0.03 Max. Min. Typ. 20.5 0.02 0.03 Max. Units
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC516
GaAs PHEMT MMIC NOISE AMPLIFIER,
Broadband Gain Return Loss
RESPONSE (dB) FREQUENCY (GHz) FREQUENCY (GHz)
Gain Temperature
GAIN (dB)
+25C +85C -55C
NOISE AMPLIFIERS CHIP
Input Return Loss Temperature
RETURN LOSS (dB) FREQUENCY (GHz)
+25C +85C -55C
Output Return Loss Temperature
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
Noise Figure Temperature
NOISE FIGURE (dB) FREQUENCY (GHz)
+25C +85C -55C
Output Temperature
(dBm) FREQUENCY (GHz)
+25C +85C -55C
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC516
GaAs PHEMT MMIC NOISE AMPLIFIER,
NOISE AMPLIFIERS CHIP
P1dB Temperature
P1dB (dBm) FREQUENCY (GHz)
+25C +85C -55C
Psat Temperature
Psat (dBm) FREQUENCY (GHz)
+25C +85C -55C
Reverse Isolation Temperature
ISOLATION (dB) FREQUENCY (GHz)
+25C +85C -55C
Power Compression
Pout (dBm), GAIN (dB), PAE(%)
Pout Gain
INPUT POWER (dBm)
Gain, Noise Figure Power Supply Voltage
GAIN (dB), P1dB (dBm) Gain Noise Figure P1dB NOISE FIGURE (dB)
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC516
GaAs PHEMT MMIC NOISE AMPLIFIER,
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Input Power (RFIN)(Vdd +3.0 Vdc) Channel Temperature Continuous Pdiss (derate mW/°C above Thermal Resistance (channel bottom) Storage Temperature Operating Temperature Sensitivity (HBM) 1.25 °C/W +150 Class
Typical Supply Current
(Vdc) +2.5 +3.0 +3.5 (mA)
NOISE AMPLIFIERS CHIP
Note: Amplifi will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Packaging Information
Standard GP-2 (Gel Pack) Alternate
Refer "Packaging Information" section packaging dimensions. alternate packaging information contact Hittite Microwave Corporation.
NOTES: DIMENSIONS INCHES [MM] THICKNESS .004" TYPICAL BOND .004" SQUARE BACKSIDE METALLIZATION: GOLD BOND METALLIZATION: GOLD BACKSIDE METAL GROUND. CONNECTION REQUIRED UNLABELED BOND PADS.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC516
GaAs PHEMT MMIC NOISE AMPLIFIER,
NOISE AMPLIFIERS CHIP
Descriptions
Number Function RFIN Description This coupled matched Ohms. Interface Schematic
Vdd1,
Power Supply Voltage amplifier. External bypass capacitors required.
RFOUT
This coupled matched Ohms. These pads must connected RF/DC ground proper operation.
Bottom
Bottom must connected RF/DC ground.
Assembly Diagram
Note: must connected RF/DC ground.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC516
GaAs PHEMT MMIC NOISE AMPLIFIER,
Mounting Bonding Techniques Millimeterwave GaAs MMICs
should attached directly ground plane eutectically with conductive epoxy (see general Handling, Mounting, Bonding Note). Microstrip transmission lines 0.127mm mil) thick alumina thin film substrates recommended bringing from chip (Figure 0.254mm mil) thick alumina thin film substrates must used, should raised 0.150mm mils) that surface coplanar with surface substrate. accomplish this attach 0.102mm mil) thick 0.150mm mil) thick molybdenum heat spreader (moly-tab) which then attached ground plane (Figure Microstrip substrates should brought close possible order minimize bond wire length. Typical die-to-substrate spacing 0.076mm 0.152 mils). Gold ribbon 0.075 mils) width minimum 0.31 (<12 mils) recommended.
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond 0.076mm (0.003")
NOISE AMPLIFIERS CHIP
Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure
Handling Precautions
Follow these precautions avoid permanent damage. Storage: bare placed either Waffle based protective containers, then sealed protective shipment. Once sealed protective been opened, should stored nitrogen environment. Cleanliness: Handle chips clean environment. attempt clean chip using liquid cleaning systems. Static Sensitivity: Follow precautions protect against strikes. Transients: Suppress instrument bias supply transients while bias applied. shielded signal bias cables minimize inductive pick-up.
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond 0.076mm (0.003")
Ground Plane
0.150mm (0.005") Thick Moly 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure
General Handling: Handle chip along edges with vacuum collet with sharp pair bent tweezers. surface chip fragile bridges should touched with vacuum collet, tweezers, fingers.
Mounting
chip back-metallized mounted with AuSn eutectic preforms with electrically conductive epoxy. mounting surface should clean flat. Eutectic Attach: 80/20 gold preform recommended with work surface temperature tool temperature When 90/10 nitrogen/hydrogen applied, tool temperature should expose chip temperature greater than more than seconds. more than seconds scrubbing should required attachment. Epoxy Attach: Apply minimum amount epoxy mounting surface that thin epoxy fillet observed around perimeter chip once placed into position. Cure epoxy manufacturer's schedule.
Wire Bonding
bonds made with 0.003" 0.0005" ribbon recommended. These bonds should thermosonically bonded with force 40-60 grams. bonds 0.001" (0.025 diameter, thermosonically bonded, recommended. Ball bonds should made with force 40-50 grams wedge bonds 18-22 grams. bonds should made with nominal stage temperature minimum amount ultrasonic energy should applied achieve reliable bonds. bonds should short possible, less than mils (0.31 mm).
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com

GaAs PHEMT MMIC NOISE AMPLIFIER, NOISE AMPLIFIERS CHIP Typic

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