GaAs PHEMT MMIC NOISE HIGH AMPLIFIER, NOISE AMPLIFIERS CHIP

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GaAs PHEMT MMIC NOISE HIGH AMPLIFIER, NOISE AMPLIFIERS CHIP

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HMC490
GaAs PHEMT MMIC NOISE HIGH AMPLIFIER,
NOISE AMPLIFIERS CHIP
Typical Applications
HMC490 ideal either driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military Space
Features
Noise Figure: Output P1dB: Gain: Output IP3: Supply Voltage: Matched Input/Output Size: 2.78 1.46
Functional Diagram
General Description
HMC490 high dynamic range GaAs PHEMT MMIC Noise Amplifier which operates between GHz. HMC490 provides gain, noise figure output from supply voltage. amplifier chip easily integrated into Multi-Chip-Modules (MCMs) small size. data tested with chip test fixture connected 0.025mm mil) diameter wire bonds minimal length 0.31mm mils).
Electrical Specifi cations, +25°
Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd -0.8V Typ.) Min. Typ. 26.5 0.03 0.04 Max. Min. Typ. 0.03 0.04 Max. Units
Adjust between -2.0 achieve typical.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC490
GaAs PHEMT MMIC NOISE HIGH AMPLIFIER,
Broadband Gain Return Loss
Gain Temperature
NOISE AMPLIFIERS CHIP
RESPONSE (dB) GAIN (dB)
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss Temperature
Output Return Loss Temperature
RETURN LOSS (dB)
RETURN LOSS (dB)
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure Temperature
Output Temperature
(dBm)
NOISE FIGURE (dB)
FREQUENCY (GHz) FREQUENCY (GHz)
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC490
GaAs PHEMT MMIC NOISE HIGH AMPLIFIER,
NOISE AMPLIFIERS CHIP
P1dB Temperature
P1dB (dBm)
Psat Temperature
Psat (dBm)
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain Noise Figure Supply Voltage@ GHz, Idd=
Power Compression
Pout (dBm), GAIN (dB),
Pout (dBm) Gain (dB)
NOISE FIGURE (dB)
GAIN (dB)
INPUT POWER (dBm)
Reverse Isolation Temperature
Gain, Noise Figure Output Supply Current GHz, Vdd=
ISOLATION (dB) FREQUENCY (GHz) GAIN (dB), (dBm)
NOISE FIGURE (dB)
Gain Noise Figure
(mA)
controlled varying
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC490
GaAs PHEMT MMIC NOISE HIGH AMPLIFIER,
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg1, Vgg2, Vgg3) Input Power (RFIN)(Vdd Vdc) Channel Temperature Continuous Pdiss (derate mW/°C above Thermal Resistance (channel bottom) Storage Temperature Operating Temperature +5.5 2.65 °C/W +150
Typical Supply Current
(Vdc) +4.5 +5.0 +5.5 +3.0 +3.5 +4.0 (mA)
NOISE AMPLIFIERS CHIP
Note: Amplifi will operate over full voltage ranges shown above. adjusted achieve Idd= +5.0V +3.5V.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Packaging Information
Standard GP-2 (Gel Pack) Alternate
NOTES: DIMENSIONS INCHES [MM] THICKNESS .004" TYPICAL BOND .004" SQUARE BACKSIDE METALLIZATION: GOLD BOND METALLIZATION: GOLD BACKSIDE METAL GROUND. CONNECTION REQUIRED UNLABELED BOND PADS.
Refer "Packaging Information" section packaging dimensions. alternate packaging information contact Hittite Microwave Corporation.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC490
GaAs PHEMT MMIC NOISE HIGH AMPLIFIER,
NOISE AMPLIFIERS CHIP
Descriptions
Number Function Description Gate control amplifier. Adjust achieve Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors 0.01 required. This coupled matched Ohms. Interface Schematic
1,8,
Vgg1,
RFIN
Vdd1,
Power Supply Voltage amplifier. External bypass capacitors 0.01 required.
RFOUT
This coupled matched Ohms. Bottom must connected RF/DC ground.
Bottom
Assembly Diagram
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC490
GaAs PHEMT MMIC NOISE HIGH AMPLIFIER,
Mounting Bonding Techniques Millimeterwave GaAs MMICs
should attached directly ground plane eutectically with conductive epoxy (see general Handling, Mounting, Bonding Note). Microstrip transmission lines 0.127mm mil) thick alumina thin film substrates recommended bringing from chip (Figure 0.254mm mil) thick alumina thin film substrates must used, should raised 0.150mm mils) that surface coplanar with surface substrate. accomplish this attach 0.102mm mil) thick 0.150mm mil) thick molybdenum heat spreader (moly-tab) which then attached ground plane (Figure Microstrip substrates should brought close possible order minimize bond wire length. Typical die-to-substrate spacing 0.076mm 0.152 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
NOISE AMPLIFIERS CHIP
Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure
Handling Precautions
Follow these precautions avoid permanent damage. Storage: bare placed either Waffle based protective containers, then sealed protective shipment. Once sealed protective been opened, should stored nitrogen environment. Cleanliness: Handle chips clean environment. attempt clean chip using liquid cleaning systems. Static Sensitivity: strikes. Follow precautions protect against
0.150mm (0.005") Thick Moly 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
Ground Plane
Transients: Suppress instrument bias supply transients while bias applied. shielded signal bias cables minimize inductive pick-up.
General Handling: Handle chip along edges with vacuum collet with sharp pair bent tweezers. surface chip fragile bridges should touched with vacuum collet, tweezers, fingers.
Mounting
chip back-metallized mounted with AuSn eutectic preforms with electrically conductive epoxy. mounting surface should clean flat. Eutectic Attach: 80/20 gold preform recommended with work surface temperature tool temperature When 90/10 nitrogen/hydrogen applied, tool temperature should expose chip temperature greater than more than seconds. more than seconds scrubbing should required attachment. Epoxy Attach: Apply minimum amount epoxy mounting surface that thin epoxy fillet observed around perimeter chip once placed into position. Cure epoxy manufacturer's schedule.
Wire Bonding
Ball wedge bond with 0.025mm mil) diameter pure gold wire. Thermosonic wirebonding with nominal stage temperature ball bonding force grams wedge bonding force grams recommended. minimum level ultrasonic energy achieve reliable wirebonds. Wirebonds should started chip terminated package substrate. bonds should short possible <0.31mm mils).
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com

GaAs PHEMT MMIC NOISE HIGH AMPLIFIER, NOISE AMPLIFIERS CHIP

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