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HITFET BTS3205N Smart Low-Side Power Switch Automotive Power


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Data Sheet, Rev. 1.0, September 2008
HITFET BTS3205N
Smart Low-Side Power Switch
Automotive Power
Smart Low-Side Power Switch BTS3205N
4.2.1 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6
Overview Block Diagram Terms Configuration Assignment BTS3205N Definitions Functions General Product Characteristics Absolute Maximum Ratings Thermal Resistance Transient Thermal Impedance Block Description Characteristics Input Power Stage Input Circuit Failure Feedback Output On-State Resistance Power Dissipation Output Timing Characteristics Protection Functions Thermal Protection Overvoltage Protection Short Circuit Protection Characteristics
Package Outlines BTS3205N Revision History
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch HITFET
BTS3205N
Features
Overview
Logic Level input Short circuit Overload protection Current limitation Input protection (ESD) Thermal protection with auto restart Compatible standard Power MOSFET Analog driving possible Green Product (RoHS compliant) Qualified
PG-SOT-223-4
Description BTS3205N channel low-side power switch PG-SOT-223-4 package providing embedded protective functions. device monolithic integrated consist N-channel power MOSFET transistor additional protection circuitry.
Table
Product Summary
Drain Voltage Input Voltage Typical On-State Resistance 25°C Maximum On-State Resistance 150°C Nominal Load Current Drain Current Single Clamping Energy
Active clamped Internally limited
VIN(max) RDS(ON,amb typ) RDS(ON,hot max) IDnom(min)
mA2)
Type BTS3205N Data Sheet
Package PG-SOT-223-4
Marking 3205N Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Overview Protective Functions Electrostatic discharge protection (ESD) Active clamp over voltage protection Thermal shutdown with auto restart Short circuit protection
Fault Information Thermal shutdown Short Battery overload
Applications Designed driving Relays Automotive Applications types resistive, inductive capacitive loads Suitable loads with peak currents Replaces discrete circuits
Detailed Description device able switch kind resistive, inductive capacitive loads, limited maximum current capabilities. BTS3205N offers protection relation Source Pin. overtemperature protection prevents device from overheating overload and/or cooling conditions. temperature information given temperature sensor power MOSFET. During thermal shutdown device tries sink increased input current feedback fault condition. BTS3205N thermal-auto-restart function, device will turn again after measured temperature dropped down thermal hysteresis. over voltage protection active during load-dump inductive turn conditions. power MOSFET limiting Drain Source voltage defined clamping voltage. This function available regardless input state.
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block DiagramTerms
Block Diagram
Drain Overvoltage Protection Overtemperature Protection
Gate Driving Unit
Protection
Overload detection Current limiter Source
BlockDiagram _3205N.emf
Figure
Block Diagram
Terms
Figure shows external terms used this data sheet.
BTS3205N
Source
Drain
Terms .emf
Figure
Terms
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
ConfigurationPin Assignment BTS3205N
Configuration
Assignment BTS3205N
DRAIN (TAB)
Figure
DRAIN SOURCE
Pin_SOT 223.emf
Configuration PG-SOT-223-4
Definitions Functions
Symbol Drain Source Function Input fault feedback Load connection Ground connection
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
General Product CharacteristicsAbsolute Maximum Ratings
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
+150 voltages with respect ground, positive current flowing into
(unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Min. Voltages 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 4.1.6 Drain Current Drain voltage Input Voltage Input Current Max.
Test Conditions
-0.2
-0.2
self limited
-0.2 TJ(start) TJ(start) 13.5 TJ(start) 13.5 TJ(start)
Energies Unclamped single pulse inductive energy single pulse Unclamped single pulse inductive energy single pulse Unclamped repetitive pulse inductive energy cycles Unclamped repetitive pulse inductive energy cycles Total Power Dissipation Operating temperature Storage temperature Electrostatic discharge voltage
4.1.7
4.1.8
4.1.9
4.1.10 4.1.11 4.1.12 4.1.13
Ptot Tstg VESD
0.78
Temperatures +150 +150
Susceptibility
subject production test, specified design. Active clamped. Internally limited. Device mounted according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 114.3 with buried planes). mounted vertical without blown air. susceptibility according EIA/JESD 22-A 114B, section
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
General Product CharacteristicsThermal Resistance
Pos. 4.2.1 4.2.2
Thermal Resistance
Parameter Junction Soldering Point Junction Ambient Symbol Min. Limit Values Typ. Max.
Unit
Conditions
RthJC RthJA
subject production test, specified design. Device mounted according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 114.3 with buried planes). mounted vertical without blown with 0.78W power dissipation generated DMOS.
Note: Stresses above ones listed here cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Note: Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed continuous repetitive operation.
4.2.1
Transient Thermal Impedance
ZthJA
ZthJC
Zth_3205 N.emf
Figure
Typical Transient Thermal Impedance single pulse, ZthJA ZthJC
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
General Product CharacteristicsThermal Resistance
ZthJA [K/W]
0.05
0.02 0.01 Single pulse
pulse_BTS3205 N.emf
Figure
Typical Transient Thermal Impedance ZthJA with different Duty cycles ZthJA f(tp) tp/T,
Device mounted according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 114.3 with buried planes). mounted vertical without blown with 0.78W power dissipation generated single pulse DMOS
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description CharacteristicsInput Power Stage
5.1.1
Block Description Characteristics
Input Power Stage Input Circuit
Figure shows input circuit BTS3205N. zener Diode protects input circuit against pulses. internal circuitry supplied input PIN. During normal operation Input connected Gate power MOSFET. During fault condition device tries sink current IINlim order give fault information back driving circuit.
INnom
Logic Gate Fault condition
IINlim Source Input.emf
Figure
Input Circuit
2,00 1,75
IN(th)
1,50 1,25 1,00 0,75 0,50 0,25 0,00
[°C] Vinth.emf
Figure
Typical Input Threshold Voltage Vinth f(TJ);
Transferchar.emf
Figure
Typical Transfer Characteristic f(VIN); TJstart
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description CharacteristicsInput Power Stage
5.1.2
Failure Feedback
During failure condition BTS3205N tries sink increased input current IINlim.
5.1.3
Output On-State Resistance
on-state resistance depends junction temperature Figure shows this dependancy typical on-state resistance RDS(on).
RDS(on)
rdson.emf
Figure
Typical On-State Resistance, RDS(on) f(TJ)
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description CharacteristicsInput Power Stage
5.1.4
Power Dissipation
maximum allowed power dissipation Figure calculated RthJC RthJA.
1,00
thJC=42 thJA=63 Ptot
0,10
0,01
Ptot_3205N.emf
Figure Maximal Allowable Power Dissipation
5.1.5
Output Timing
voltage signal input above threshold voltage causes power MOSFET switch with dedicated slope which optimized emission. Figure shows timing definition.
toff
Switching.emf
Figure
Definition Power Output Timing Resistive Load
5.1.6
Characteristics
Note: Characteristics show deviation parameter given input voltage junction temperature. Typical values show typical parameters expected from manufacturing. voltages with respect Source unless otherwise stated.
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description CharacteristicsInput Power Stage
Electrical Characteristics: Input Power Stage
+150 voltages with respect ground, positive current flowing into
(unless otherwise specified Pos. Parameter Input 5.1.1 Nominal Input current 5.1.2 Input current protection mode 5.1.3 Input threshold voltage Symbol Limit Values Min. Typ. Max. Unit Test Conditions
IINnom IINlim VINTH
5.1.4
VIN; 25°C VIN;
Power Stage 5.1.5 On-State Resistance
RDS(on)
200mA
5.1.6
200mA
5.1.7
5.1.8
5.1.9 Nominal load current
IDnom
5.1.10 Zero input voltage drain current
IDSS
200mA 200mA °C2); 13.5 V;VIN V;VIN V;VIN
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description CharacteristicsInput Power Stage Electrical Characteristics: Input Power Stage (cont'd)
+150 voltages with respect ground, positive current flowing into (unless otherwise specified
Pos. Parameter Switching 5.1.11 Turn-on time 5.1.12 Turn-off time 5.1.13 Slew rate Symbol Limit Values Min. Typ. Max. Unit Test Conditions
toff
dVds/dton
V/µs Vbb;
5.1.14 Slew rate
dVds/dtoff
18.2 V/µs Vbb; -1.5
Inverse Diode 5.1.15 Inverse Diode forward voltage
-1.0
subject production test, calculated RthJA RDS(on). Device mounted according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 114.3 with buried planes). mounted vertical without blown air.
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Protection FunctionsThermal Protection
Protection Functions
device provides embedded protection functions. Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operation.
Thermal Protection
device protected against over temperature overload cooling conditions. ensure this temperature sensor located Power MOSFET used. BTS3205N thermal auto-restart function. After device cooled down will switch again Figure
Thermal shutdown TJSD TJSD restart
Thermal_fault_autorestart.emf
Figure
Error Signal Input Current Thermal Shutdown
Overvoltage Protection
When switching inductive loads with low-side switches, Drain-Source voltage rises above battery potential, because inductance intends continue driving current.
Drain
Source OutputClamap.emf
Figure
Output Clamp
BTS3205N equipped with voltage clamp mechanism that keeps Drain-Source voltage certain level. Figure Figure more details.
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Protection FunctionsOvervoltage Protection
Turn over temperature short circuit
lamp
InductiveLoad.emf
Figure
Switching Inductance
While demagnetization inductive loads, energy dissipated BTS3205N. This energy calculated with following equation:
Following equation simplifies under assumption
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Protection FunctionsShort Circuit Protection
Short Circuit Protection
condition short circuit overload condition device. current reaches value Ilim device starts limit current. condition current limitation device heats thermal shutdown temperature reached device turns off. Figure shows this behavior. During current limitation input current above IINnom. During time period tdlim, current above Ilim.
Occurrence Over current high ohmic Short circuit Turn over temperature Restart after short circuit turn Restart into normal load condition /Zsc
TJSD TJSD
Short_circuit.emf
Figure
Short Circuit Behavior BTS3205N
device side switch assumed that Source Ground path neglectable impedance resistance. Therefore impedance resistance load path during short circuit merged into Zsc.
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Protection FunctionsCharacteristics
Characteristics
Note: Characteristics show deviation parameter given input voltage junction temperature. Typical values show typical parameters expected from manufacturing. Electrical Characteristics: Protection Functions
+150 voltages with respect ground, positive current flowing into (unless otherwise specified)
Pos. Parameter Thermal Protection 6.4.1 Thermal shut down junction temperature 6.4.2 Thermal hysteresis Overvoltage Protection 6.4.3 Drain clamp voltage Current Limitation Short Circuit Protection 6.4.4 Current limitation Symbol Limit Values Min. Typ. Max. 1751)
Unit
Test Conditions
TJSD TJSD VClamp
V;VDS tmeasure tdlim °C1)
Ilim
6.4.5 Current limitation delay time
subject production test, specified design.
tdlim
Data Sheet
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Package Outlines BTS3205N
Package Outlines BTS3205N
±0.2 ±0.1
1.6±0.1 MAX.
0.25
±0.1
0.25
MIN.
0.28 ±0.04
0.10°
SOT223-PO
Figure
PG-SOT-223-4 (Small Outline Transistor)
Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020).
further information alternative packages, please visit website: Data Sheet
Dimensions Rev. 1.0, 2008-09-25
±0.2
±0.3
Smart Low-Side Power Switch BTS3205N
Revision History
Version Rev.
Revision History
Date 2008-09-25 Changes released data sheet
Data Sheet
Rev. 1.0, 2008-09-25
Edition 2008-09-25 Published Infineon Technologies 81726 Munich, Germany 2008 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.

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