| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
HITFET BTS3205N Smart Low-Side Power Switch Automotive Power
Top Searches for this datasheetData Sheet, Rev. 1.0, September 2008 HITFET BTS3205N Smart Low-Side Power Switch Automotive Power Smart Low-Side Power Switch BTS3205N 4.2.1 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 Overview Block Diagram Terms Configuration Assignment BTS3205N Definitions Functions General Product Characteristics Absolute Maximum Ratings Thermal Resistance Transient Thermal Impedance Block Description Characteristics Input Power Stage Input Circuit Failure Feedback Output On-State Resistance Power Dissipation Output Timing Characteristics Protection Functions Thermal Protection Overvoltage Protection Short Circuit Protection Characteristics Package Outlines BTS3205N Revision History Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch HITFET BTS3205N Features Overview Logic Level input Short circuit Overload protection Current limitation Input protection (ESD) Thermal protection with auto restart Compatible standard Power MOSFET Analog driving possible Green Product (RoHS compliant) Qualified PG-SOT-223-4 Description BTS3205N channel low-side power switch PG-SOT-223-4 package providing embedded protective functions. device monolithic integrated consist N-channel power MOSFET transistor additional protection circuitry. Table Product Summary Drain Voltage Input Voltage Typical On-State Resistance 25°C Maximum On-State Resistance 150°C Nominal Load Current Drain Current Single Clamping Energy Active clamped Internally limited VIN(max) RDS(ON,amb typ) RDS(ON,hot max) IDnom(min) mA2) Type BTS3205N Data Sheet Package PG-SOT-223-4 Marking 3205N Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Overview Protective Functions Electrostatic discharge protection (ESD) Active clamp over voltage protection Thermal shutdown with auto restart Short circuit protection Fault Information Thermal shutdown Short Battery overload Applications Designed driving Relays Automotive Applications types resistive, inductive capacitive loads Suitable loads with peak currents Replaces discrete circuits Detailed Description device able switch kind resistive, inductive capacitive loads, limited maximum current capabilities. BTS3205N offers protection relation Source Pin. overtemperature protection prevents device from overheating overload and/or cooling conditions. temperature information given temperature sensor power MOSFET. During thermal shutdown device tries sink increased input current feedback fault condition. BTS3205N thermal-auto-restart function, device will turn again after measured temperature dropped down thermal hysteresis. over voltage protection active during load-dump inductive turn conditions. power MOSFET limiting Drain Source voltage defined clamping voltage. This function available regardless input state. Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Block DiagramTerms Block Diagram Drain Overvoltage Protection Overtemperature Protection Gate Driving Unit Protection Overload detection Current limiter Source BlockDiagram _3205N.emf Figure Block Diagram Terms Figure shows external terms used this data sheet. BTS3205N Source Drain Terms .emf Figure Terms Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N ConfigurationPin Assignment BTS3205N Configuration Assignment BTS3205N DRAIN (TAB) Figure DRAIN SOURCE Pin_SOT 223.emf Configuration PG-SOT-223-4 Definitions Functions Symbol Drain Source Function Input fault feedback Load connection Ground connection Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N General Product CharacteristicsAbsolute Maximum Ratings General Product Characteristics Absolute Maximum Ratings Absolute Maximum Ratings +150 voltages with respect ground, positive current flowing into (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Min. Voltages 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 4.1.6 Drain Current Drain voltage Input Voltage Input Current Max. Test Conditions -0.2 -0.2 self limited -0.2 TJ(start) TJ(start) 13.5 TJ(start) 13.5 TJ(start) Energies Unclamped single pulse inductive energy single pulse Unclamped single pulse inductive energy single pulse Unclamped repetitive pulse inductive energy cycles Unclamped repetitive pulse inductive energy cycles Total Power Dissipation Operating temperature Storage temperature Electrostatic discharge voltage 4.1.7 4.1.8 4.1.9 4.1.10 4.1.11 4.1.12 4.1.13 Ptot Tstg VESD 0.78 Temperatures +150 +150 Susceptibility subject production test, specified design. Active clamped. Internally limited. Device mounted according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 114.3 with buried planes). mounted vertical without blown air. susceptibility according EIA/JESD 22-A 114B, section Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N General Product CharacteristicsThermal Resistance Pos. 4.2.1 4.2.2 Thermal Resistance Parameter Junction Soldering Point Junction Ambient Symbol Min. Limit Values Typ. Max. Unit Conditions RthJC RthJA subject production test, specified design. Device mounted according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 114.3 with buried planes). mounted vertical without blown with 0.78W power dissipation generated DMOS. Note: Stresses above ones listed here cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Note: Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed continuous repetitive operation. 4.2.1 Transient Thermal Impedance ZthJA ZthJC Zth_3205 N.emf Figure Typical Transient Thermal Impedance single pulse, ZthJA ZthJC Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N General Product CharacteristicsThermal Resistance ZthJA [K/W] 0.05 0.02 0.01 Single pulse pulse_BTS3205 N.emf Figure Typical Transient Thermal Impedance ZthJA with different Duty cycles ZthJA f(tp) tp/T, Device mounted according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 114.3 with buried planes). mounted vertical without blown with 0.78W power dissipation generated single pulse DMOS Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Block Description CharacteristicsInput Power Stage 5.1.1 Block Description Characteristics Input Power Stage Input Circuit Figure shows input circuit BTS3205N. zener Diode protects input circuit against pulses. internal circuitry supplied input PIN. During normal operation Input connected Gate power MOSFET. During fault condition device tries sink current IINlim order give fault information back driving circuit. INnom Logic Gate Fault condition IINlim Source Input.emf Figure Input Circuit 2,00 1,75 IN(th) 1,50 1,25 1,00 0,75 0,50 0,25 0,00 [°C] Vinth.emf Figure Typical Input Threshold Voltage Vinth f(TJ); Transferchar.emf Figure Typical Transfer Characteristic f(VIN); TJstart Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Block Description CharacteristicsInput Power Stage 5.1.2 Failure Feedback During failure condition BTS3205N tries sink increased input current IINlim. 5.1.3 Output On-State Resistance on-state resistance depends junction temperature Figure shows this dependancy typical on-state resistance RDS(on). RDS(on) rdson.emf Figure Typical On-State Resistance, RDS(on) f(TJ) Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Block Description CharacteristicsInput Power Stage 5.1.4 Power Dissipation maximum allowed power dissipation Figure calculated RthJC RthJA. 1,00 thJC=42 thJA=63 Ptot 0,10 0,01 Ptot_3205N.emf Figure Maximal Allowable Power Dissipation 5.1.5 Output Timing voltage signal input above threshold voltage causes power MOSFET switch with dedicated slope which optimized emission. Figure shows timing definition. toff Switching.emf Figure Definition Power Output Timing Resistive Load 5.1.6 Characteristics Note: Characteristics show deviation parameter given input voltage junction temperature. Typical values show typical parameters expected from manufacturing. voltages with respect Source unless otherwise stated. Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Block Description CharacteristicsInput Power Stage Electrical Characteristics: Input Power Stage +150 voltages with respect ground, positive current flowing into (unless otherwise specified Pos. Parameter Input 5.1.1 Nominal Input current 5.1.2 Input current protection mode 5.1.3 Input threshold voltage Symbol Limit Values Min. Typ. Max. Unit Test Conditions IINnom IINlim VINTH 5.1.4 VIN; 25°C VIN; Power Stage 5.1.5 On-State Resistance RDS(on) 200mA 5.1.6 200mA 5.1.7 5.1.8 5.1.9 Nominal load current IDnom 5.1.10 Zero input voltage drain current IDSS 200mA 200mA °C2); 13.5 V;VIN V;VIN V;VIN Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Block Description CharacteristicsInput Power Stage Electrical Characteristics: Input Power Stage (cont'd) +150 voltages with respect ground, positive current flowing into (unless otherwise specified Pos. Parameter Switching 5.1.11 Turn-on time 5.1.12 Turn-off time 5.1.13 Slew rate Symbol Limit Values Min. Typ. Max. Unit Test Conditions toff dVds/dton V/µs Vbb; 5.1.14 Slew rate dVds/dtoff 18.2 V/µs Vbb; -1.5 Inverse Diode 5.1.15 Inverse Diode forward voltage -1.0 subject production test, calculated RthJA RDS(on). Device mounted according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 114.3 with buried planes). mounted vertical without blown air. Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Protection FunctionsThermal Protection Protection Functions device provides embedded protection functions. Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operation. Thermal Protection device protected against over temperature overload cooling conditions. ensure this temperature sensor located Power MOSFET used. BTS3205N thermal auto-restart function. After device cooled down will switch again Figure Thermal shutdown TJSD TJSD restart Thermal_fault_autorestart.emf Figure Error Signal Input Current Thermal Shutdown Overvoltage Protection When switching inductive loads with low-side switches, Drain-Source voltage rises above battery potential, because inductance intends continue driving current. Drain Source OutputClamap.emf Figure Output Clamp BTS3205N equipped with voltage clamp mechanism that keeps Drain-Source voltage certain level. Figure Figure more details. Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Protection FunctionsOvervoltage Protection Turn over temperature short circuit lamp InductiveLoad.emf Figure Switching Inductance While demagnetization inductive loads, energy dissipated BTS3205N. This energy calculated with following equation: Following equation simplifies under assumption Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Protection FunctionsShort Circuit Protection Short Circuit Protection condition short circuit overload condition device. current reaches value Ilim device starts limit current. condition current limitation device heats thermal shutdown temperature reached device turns off. Figure shows this behavior. During current limitation input current above IINnom. During time period tdlim, current above Ilim. Occurrence Over current high ohmic Short circuit Turn over temperature Restart after short circuit turn Restart into normal load condition /Zsc TJSD TJSD Short_circuit.emf Figure Short Circuit Behavior BTS3205N device side switch assumed that Source Ground path neglectable impedance resistance. Therefore impedance resistance load path during short circuit merged into Zsc. Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Protection FunctionsCharacteristics Characteristics Note: Characteristics show deviation parameter given input voltage junction temperature. Typical values show typical parameters expected from manufacturing. Electrical Characteristics: Protection Functions +150 voltages with respect ground, positive current flowing into (unless otherwise specified) Pos. Parameter Thermal Protection 6.4.1 Thermal shut down junction temperature 6.4.2 Thermal hysteresis Overvoltage Protection 6.4.3 Drain clamp voltage Current Limitation Short Circuit Protection 6.4.4 Current limitation Symbol Limit Values Min. Typ. Max. 1751) Unit Test Conditions TJSD TJSD VClamp V;VDS tmeasure tdlim °C1) Ilim 6.4.5 Current limitation delay time subject production test, specified design. tdlim Data Sheet Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Package Outlines BTS3205N Package Outlines BTS3205N ±0.2 ±0.1 1.6±0.1 MAX. 0.25 ±0.1 0.25 MIN. 0.28 ±0.04 0.10° SOT223-PO Figure PG-SOT-223-4 (Small Outline Transistor) Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pb-free finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020). further information alternative packages, please visit website: Data Sheet Dimensions Rev. 1.0, 2008-09-25 ±0.2 ±0.3 Smart Low-Side Power Switch BTS3205N Revision History Version Rev. Revision History Date 2008-09-25 Changes released data sheet Data Sheet Rev. 1.0, 2008-09-25 Edition 2008-09-25 Published Infineon Technologies 81726 Munich, Germany 2008 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered. Other recent searchesXN02216 - XN02216 XN02216 Datasheet XN2216 - XN2216 XN2216 Datasheet SN74LVC861A - SN74LVC861A SN74LVC861A Datasheet S5500BC - S5500BC S5500BC Datasheet E42249-004 - E42249-004 E42249-004 Datasheet S3C7R - S3C7R S3C7R Datasheet NX3L2G384 - NX3L2G384 NX3L2G384 Datasheet ICS84329-01 - ICS84329-01 ICS84329-01 Datasheet
Privacy Policy | Disclaimer |