SOT-23 Plastic-Encapsulate Transistors Capable 0.625Watts(Tamb=25 Powe
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MMSS8050
SOT-23 Plastic-Encapsulate Transistors Capable 0.625Watts(Tamb=25 Power Dissipation. Collector-current 1.5A Collector-base Voltage Operating storage junction temperature range: -55OC +150 Marking Code:
Silicon Plastic-Encapsulate Transistor
SOT-23
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, Collector-Emitter Breakdown Voltage (IC=0.1mAdc, Emitter-Base Breakdown Voltage =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, Collector Cutoff Current (VCE=20Vdc, Emitter Cutoff Current (VEB =5.0Vdc, IC=0) Current Gain (IC=100mAdc, CE=1.0Vdc) Current Gain (IC=800mAdc, CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=800mAdc, =80mAdc) Base-Emitter Saturation Voltage (IC=800mAdc, =80mAdc) Base- Emitter Voltage =1.5Adc) Transistor Frequency (IC=50mAdc, CE=10Vdc, f=30MHz) -Max -0.1 Units
CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO uAdc uAdc uAdc
DIMENSIONS INCHES .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 2.80 2.10 1.20 1.78 .013 .085
CHARACTERISTICS
hFE(1) hFE(2) VCE(sat) VBE(sat) -350 -0.5 -Vdc
.120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
3.04 2.64 1.40 1.03 2.05 .100 1.12 .180
NOTE
Suggested Solder Layout
.031 .800
SMALL-SIGNAL CHARACTERISTICS
-MHz
.035 .900
.079 2.000
CLASSIFICATION
Rank Range 120-200 200-350
.037 .950 .037 .950
inches
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