SOT-23 Plastic-Encapsulate Transistors Capable 0.2Watts(Tamb=25 Power
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MMS9018
SOT-23 Plastic-Encapsulate Transistors Capable 0.2Watts(Tamb=25 Power Dissipation. Collector-current 0.05A Collector-base Voltage Operating storage junction temperature range: -55OC +150 Marking Code:
Silicon Plastic-Encapsulate Transistor
SOT-23
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, Collector-Emitter Breakdown Voltage (IC=0.1mAdc, Emitter-Base Breakdown Voltage =100uAdc, IC=0) Collector Cutoff Current (VCB=20Vdc, Collector Cutoff Current (VCE=15Vdc, Emitter Cutoff Current (VEB =3.0Vdc, IC=0) Current Gain (IC=1.0mAdc, CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=10mAdc, =1.0mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, =1.0mAdc) Transistor Frequency (IC=5.0mAdc, CE=5.0Vdc, f=400MHz) -Max -0.1 Units uAdc uAdc uAdc
INCHES .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015
CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO
DIMENSIONS 2.80 2.10 1.20 1.78 .013 .085
CHARACTERISTICS
hFE(1) VCE(sat) VBE(sat) -190 -Vdc
.120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
3.04 2.64 1.40 1.03 2.05 .100 1.12 .180
NOTE
SMALL-SIGNAL CHARACTERISTICS
-MHz
.035 .900
Suggested Solder Layout
.031 .800
.079 2.000
inches
.037 .950 .037 .950
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