SOT-23 Plastic-Encapsulate Transistors Capable 0.2Watts(Tamb=25 Power
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MMS9014
SOT-23 Plastic-Encapsulate Transistors Capable 0.2Watts(Tamb=25 Power Dissipation. Collector-current 0.1A Collector-base Voltage Operating storage junction temperature range: -55OC +150 Marking Code:
Silicon Plastic-Encapsulate Transistor
SOT-23
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, Collector-Emitter Breakdown Voltage (IC=0.1mAdc, Emitter-Base Breakdown Voltage =100uAdc, IC=0) Collector Cutoff Current (VCB=50Vdc, Collector Cutoff Current (VCE=35Vdc, Emitter Cutoff Current (VEB =3.0Vdc, IC=0) Current Gain (IC=1.0mAdc, CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, =5.0mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, =5.0mAdc) Transistor Frequency (IC=10mAdc, CE=5.0Vdc, f=30MHz) -Max -0.1 Units
CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO uAdc uAdc uAdc
DIMENSIONS INCHES .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 2.80 2.10 1.20 1.78 .013 .085
CHARACTERISTICS
hFE(1) VCE(sat) VBE(sat) -1000 -Vdc
.120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
3.04 2.64 1.40 1.03 2.05 .100 1.12 .180
NOTE
SMALL-SIGNAL CHARACTERISTICS
-MHz
Suggested Solder Layout
.031 .800 .035 .900 .079 2.000 inches
CLASSIFICATION
Rank Range 200-450 450-1000
.037 .950 .037 .950
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