Fast Switching Diode Silicon Epitaxial Planar Diode Electrical da
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LS4151
Fast Switching Diode
Silicon Epitaxial Planar Diode Electrical data identical with device 1N4151 Quadro Melf package
Applications
Extreme fast switches
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80) Weight: approx. Cathode Band Color: Black
Absolute Maximum Ratings
Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation VR=0 Test Condition
Tamb=25oC unless otherwise specified
Symbol VRRM IFSM IFRM IFAV Value Unit
Thermal Characteristics
Parameter Junction ambient Junction temperature Stroage temperature range Test Condition board 50mm 1.6mm
Tamb=25oC unless otherwise specified
Symbol RthJA Tstg Value +175 Unit
Electrical Characteristics
Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time IF=50mA VR=50V VR=50V, Tj=150oC IR=5uA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50mV IF=IR=10mA, iR=1m IF=10mA, VR=6V, iR=0.1x RL=100 Test Condition V(BR)
Tamb=25oC unless otherwise specified
Symbol
Min.
Typ. 0.88
Max.
Unit
Typical characteristics
Tamb=25oC unless otherwise specified
Package Dimensions (inches)
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