StarMOST Power MOSFET VDSS 500V ID25 RDS(ON) 0.85 Descriptio

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

StarMOST Power MOSFET VDSS 500V ID25 RDS(ON) 0.85 Descriptio

Datasheet Thumbnail

Top Searches for this datasheet

SSFP8N50
StarMOST Power MOSFET
VDSS 500V ID25 RDS(ON) 0.85
Description
StarMOS generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimises JFET effect, increases packing density reduces on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Pin1-Gate Pin2-Drain Pin1-Source
Application
Switching application
Absolute Maximum Ratings
Parameter ID@Tc=25 ID@Tc=100C PD@TC=25C dv/dt TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
Max. +175 300(1.6mm from case) in(1.1N
Units V/ns
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range
Soldering Temperature, seconds Mounting Torque,6-32 screw
Thermal Resistance
Parameter Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. Typ. 0.50 Max. Units
SSFP8N50
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 C(unless otherwise specified)
Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS td(on) td(off) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
V(BR)DSS/TJ Breakdown Voltage Temp.Coefficient
Min.
Typ. 0.58
Max. Units 0.85 -100
Test Conditions VGS=0V,ID=250A
Reference 25C,ID=1mA VGS=10V,ID=4.8A VDS=VGS,ID=250A VDS=50V,ID=4.8A VDS=500V,VGS=0V VDS=400V,VGS=0V,TJ=150C VGS=20V VGS=-20V
ID=8A VDS=400V VGS=10V Fig.6 VDD=250V ID=8A RG=9 RD=30 Between lead, 6mm(0.25in.) from package center contact VGS=0V VDS=25V f=1.0MHZ Figure
Ciss Coss Crss
Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
1005
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time Min. Typ. Max. Units Test Conditions MOSFET symbol showing integral reverse junction diode. TJ=25C,IS=8A,VGS=0V TJ=25C,IF=8A di/dt=100A/s
Intrinsic turn-on time negligible (turn-on dominated
Notes: Repetitive rating;pulse width limited max.junction temperature(see figure
ISD8A,di/dt100A/S,VDDV(BR)DSS, TJ25 Pulse width300S; duty cycle2%
16mH,
Starting 25°C

StarMOST Power MOSFET VDSS 500V ID25 RDS(ON) 0.85 Descriptio

Top Searches for this datasheet

Other recent searches