StarMOST Power MOSFET VDSS 650V ID25 RDS(ON) Description
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SSFP7N65
StarMOST Power MOSFET
VDSS 650V ID25 RDS(ON)
Description
StarMOS generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimises JFET effect, increases packing density reduces on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Pin1-Gate Pin2-Drain Pin1-Source
Application
Switching application
Absolute Maximum Ratings
Parameter ID@Tc=25 ID@Tc=100C PD@TC=25C dv/dt TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
Max. +175 300(1.6mm from case) in(1.1N
Units V/ns
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range
Soldering Temperature, seconds Mounting Torque,6-32 screw
Thermal Resistance
Parameter Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. Typ. 0.50 Max. Units
SSFP7N65
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 C(unless otherwise specified)
Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS td(on) td(off) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
V(BR)DSS/TJ Breakdown Voltage Temp.Coefficient
Min.
Typ. 0.06 1.18
Max. Units -100
Test Conditions VGS=0V,ID=250A
Reference 25C,ID=1mA VGS=10V,ID=3.5A VDS=VGS,ID=250A VDS=40V,ID=3.5A VDS=650V,VGS=0V VDS=520V,VGS=0V,TJ=150C VGS=20V VGS=-20V
ID=7A VDS=520V VGS=10V Fig.6 VDD=325V ID=3.5A RG=25 Between lead, 6mm(0.25in.) from package center contact VGS=0V VDS=25V f=1.0MHZ Figure
Ciss Coss Crss
Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
1250
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time Min. Typ. Max. Units Test Conditions MOSFET symbol showing integral reverse junction diode. TJ=25C,IS=7A,VGS=0V TJ=25C,IF=7A di/dt=100A/s
Intrinsic turn-on time negligible (turn-on dominated
Notes: Repetitive rating;pulse width limited max.junction temperature(see figure
ISD7A,di/dt200A/S,VDDV(BR)DSS, TJ25 Pulse width300S; duty cycle2%
7.3mH, 50V,
Starting 25°C
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