FQPF6N80T 800V N-Channel MOSFET These N-Channel enhancement

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FQPF6N80T 800V N-Channel MOSFET These N-Channel enhancement

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FQPF6N80T
FQPF6N80T
800V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulse avalanche commutation mode. These devices well suited high efficiency switch mode power supply.
QFET
Features
3.3A, 800V, RDS(on) 1.95 @VGS gate charge typical Crss typical Fast switching 100% avalanche tested Improved dv/dt capability 100% package isolation tested (Note
TO-220F Potted
FQPF Series
Absolute Maximum Ratings
Symbol VDSS VGSS dv/dt TSTG
25°C unless otherwise noted
Parameter Drain-Source Voltage Continuous 25°C) Drain Current Continuous 100°C) Drain Current Pulsed
(Note
FQPF6N80T 13.2
(Note (Note (Note (Note
Units V/ns W/°C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation 25°C)
0.41 +150
Derate above 25°C Operating Storage Temperature Range Maximum lead temperature soldering purposes, from case seconds
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient -Max 2.45 62.5 Units °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. October 2009
FQPF6N80T
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Referenced 25°C 125°C -0.9 -100 V/°C
Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS, 1.65 1.65
(Note
-1.5
1.95
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -1150 1500
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
(Note 4,5)
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge A/µs
(Note
-650
13.2
Notes: Repetitive Rating Pulse width limited maximum junction temperature 117mH, 3.3A, 50V, Starting 25°C 5.8A, di/dt 200A/µs, BVDSS, Starting 25°C Pulse Test Pulse width 300µs, Duty cycle Essentially independent operating temperature Viso=4000V, t=0.3s single pulse, recognized
©2002 Fairchild Semiconductor Corporation
Rev. October 2009
FQPF6N80T
Typical Characteristics
Drain Current
Drain Current
15.0 10.0 Bottom
Notes Pulse Test
Notes Pulse Test
VDS, Drain-Source Voltage
VGS, Gate-Source Voltage
Figure On-Region Characteristics
Figure Transfer Characteristics
RDS(ON) Drain-Source On-Resistance
IDR, Reverse Drain Current
Notes Pulse Test
Note
Drain Current
VSD, Source-Drain voltage
Figure On-Resistance Variation Drain Current Gate Voltage
Figure Body Diode Forward Voltage Variation with Source Current Temperature
2000 1800 1600 1400
Ciss (Cds shorted) Coss Crss
VGS, Gate-Source Voltage
160V 400V
Ciss
Capacitance [pF]
640V
1200 1000
Coss
Notes
Crss
Note 5.8A
VDS, Drain-Source Voltage
Total Gate Charge [nC]
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. October 2009
FQPF6N80T
Typical Characteristics
(Continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
Notes
Notes
-100
-100
Junction Temperature
Junction Temperature
Figure Breakdown Voltage Variation Temperature
Figure On-Resistance Variation Temperature
Operation This Area Limited DS(on)
Drain Current
Drain Current
Notes
Single Pulse
VDS, Drain-Source Voltage
Case Temperature
Figure Maximum Safe Operating Area
Figure Maximum Drain Current Case Temperature
JC(t), Thermal Response
Figure Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. October 2009
FQPF6N80T
Gate Charge Test Circuit Waveform
SmTp
Resistive Switching Test Circuit Waveforms
Unclamped Inductive Switching Test Circuit Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. October 2009
FQPF6N80T
Peak Diode Recovery dv/dt Test Circuit Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. October 2009
FQPF6N80T
Package Dimensions
TO-220F Potted
3.30 ±0.10 10.16 ±0.20 (7.00) ±0.10 2.54 ±0.20 (0.70)
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
9.75 ±0.30
MAX1.47 0.80 ±0.10
0.35 ±0.10 2.54TYP [2.54 ±0.20]
0.50 -0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20
+0.10
2.76 ±0.20
9.40 ±0.20
Dimensions Millimeters
©2002 Fairchild Semiconductor Corporation Rev. October 2009
15.87 ±0.20
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Rev.

FQPF6N80T 800V N-Channel MOSFET These N-Channel enhancement

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