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BPV21F(L) high speed high sensitive photodiode plasic package with cyl


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BPV21F(L)
BPV21F(L) high speed high sensitive photodiode plasic package with cylindrical side view lens. epoxy package itself filter, spectrally matched GaAs GaAs/GaAlAs emitters nm). Lens radius chip position perfectly matched chip size, giving high sensitivity without compromising viewing angle. comparison with flat packages cylindrical lens package achieves sensitivity improvement
948387
Features
Large radiant sensitive area mm2) Wide viewing angle Fast response times junction capacitance TO-92 plastic package with filter Filter designed transmission Option long lead package optional available with suffix "L"; e.g.: BPV23FL Lead (Pb)-free component Component accordance RoHS 2002/95/EC WEEE 2002/96/EC
Applications
Infrared remote control free transmission systems combination with emitter diodes (TSU.- TSI.-Series).
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient Tamb Test condition Symbol Tamb Tstg RthJA Value Unit
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode capacitance Serial Resistance Test condition MHz, Symbol V(BR) Typ. Unit
Document Number 81507 Rev. 1.6, 13-Nov-06
www.vishay.com
BPV21F(L)
Vishay Semiconductors Optical Characteristics
Tamb unless otherwise specified Parameter Open Circuit Voltage Temp. Coefficient Short Circuit Current Reverse Light Current Temp. Coefficient Absolute Spectral Sensitivity Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Quantum Efficiency Noise Equivalent Power Detectivity Rise Time Fall Time Cut-Off Frequency Test condition mW/cm2, Symbol TKVo TKIra Typ. Unit mV/K
mW/cm2, mW/cm2, mW/cm
mW/cm2,
0.35 1050 10-14 1012
cmHz/W
Typical Characteristics
Tamb unless otherwise specified
1000
Reverse Dark Current (nA)
Relative Reverse Light Current
Tamb Ambient Temperature (°C)
8403
Tamb Ambient Temperature (°C)
8409
Figure Reverse Dark Current Ambient Temperature
Figure Relative Reverse Light Current Ambient Temperature
www.vishay.com
Document Number 81507 Rev. 1.6, 13-Nov-06
BPV21F(L)
Relative Spectral Sensitivity
1000
Reverse Light Current (µA)
0.01
8421
Irradiance (mW/cm
1050
1150
8408
Wavelength (nm)
Figure Reverse Light Current Irradiance
Figure Relative Spectral Sensitivity Wavelength
Reverse Light Current
mW/cm2
Srel Relative Sensitivity
mW/cm
mW/cm2 mW/cm
0.05 mW/cm2
8406
8422
Reverse Voltage
Figure Reverse Light Current Reverse Voltage
Figure Relative Radiant Sensitivity Angular Displacement
Diode Capacitance (pF)
8423
Reverse Voltage
Figure Diode Capacitance Reverse Voltage
Document Number 81507 Rev. 1.6, 13-Nov-06
www.vishay.com
BPV21F(L)
Vishay Semiconductors Package Dimensions
9612202
Package Dimensions
9612207
www.vishay.com
Document Number 81507 Rev. 1.6, 13-Nov-06
BPV21F(L)
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81507 Rev. 1.6, 13-Nov-06
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com

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