Silicon Phototransistor, RoHS Compliant Package type: leaded Pack

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Silicon Phototransistor, RoHS Compliant Package type: leaded Pack

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BPV11
Silicon Phototransistor, RoHS Compliant
Package type: leaded Package form: Dimensions mm): High photo sensitivity High radiant sensitivity Suitable visible near infrared radiation
12785
Fast response times Angle half sensitivity: Base terminal connected
DESCRIPTION
BPV11 silicon phototransistor with high radiant sensitivity clear, plastic package with base terminal. sensitive visible near infrared radiation.
Lead (Pb)-free component accordance RoHS 2002/95/EC WEEE 2002/96/EC
with
APPLICATIONS
Detector industrial electronic circuitry, measurement control
PRODUCT SUMMARY
COMPONENT BPV11 Note Test condition table "Basic Characteristics" (mA) (deg) (nm) 1080
ORDERING INFORMATION
ORDERING CODE BPV11 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 3000 pcs, 3000 pcs/bulk PACKAGE FORM
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb unless otherwise specified from body Connected with wire, 0.14 tp/T 0.5, Tamb TEST CONDITION SYMBOL VCBO VCEO VEBO Tamb Tstg RthJA VALUE UNIT
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technical questions, contact: detectortechsupport@vishay.com
Document Number: 81504 Rev. 1.6, 05-Sep-08
BPV11
Silicon Phototransistor, RoHS Compliant
Power Dissipation (mW)
RthJA
8300
Tamb Ambient Temperature (°C)
Fig. Power Dissipation Limit Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Collector emitter breakdown voltage Collector emitter dark current current gain Collector emitter capacitance Collector base capacitance Collector light current Angle half sensitivity Wavelength peak sensitivity Range spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb unless otherwise specified mW/cm2, TEST CONDITION MHz, MHz, mW/cm2, SYMBOL V(BR)CEO ICEO CCEO CCBO VCEsat toff MIN. 1080 TYP. MAX. UNIT
BASIC CHARACTERISTICS
Tamb unless otherwise specified
ICEO Collector Dark Current (nA)
Relative Collector Current
mW/cm2
8249
Tamb Ambient Temperature (°C)
8239
Tamb Ambient Temperature (°C)
Fig. Collector Dark Current Ambient Temperature
Fig. Relative Collector Current Ambient Temperature
Document Number: 81504 Rev. 1.6, 05-Sep-08
technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
BPV11
Vishay Semiconductors Silicon Phototransistor, RoHS Compliant
CCBO Collector Base Capacitance (pF)
Collector Light Current (mA)
Collector Base Voltage
0.01 0.01
8244
8246
Irradiance
Fig. Collector Light Current Irradiance
Fig. Collector Base Capacitance Collector Base Voltage
Collector Light Current (mA)
CCEO Collector Ermitter Capacitance (pF)
mW/cm2 mW/cm2 mW/cm2 mW/cm2 0.05 mW/cm2 0.02 mW/cm2
Collector Ermitter Voltage
8272
Collector Emitter Voltage
8247
Fig. Collector Light Current Collector Emitter Voltage
Fig. Collector Emitter Capacitance Collector Emitter Voltage
ton/toff Turn-on/Turn-off Time (µs)
Amplification
toff
0.01
8250
8253
Collector Current (mA)
Collector Current (mA)
Fig. Amplification Collector Current
Fig. Turn-on/Turn-off Time Collector Current
www.vishay.com
technical questions, contact: detectortechsupport@vishay.com
Document Number: 81504 Rev. 1.6, 05-Sep-08
BPV11
Silicon Phototransistor, RoHS Compliant
()rel Relative Spectral Sensitivity
Angular Displacement
1000
8248
Srel Relative Sensitivity
8348
Wavelength (nm)
Fig. Relative Spectral Sensitivity Wavelength
Fig. Relative Radiant Sensitivity Angular Displacement
PACKAGE DIMENSIONS millimeters
0.15
5.75
Chip position
0.15
(4.55)
12.3
0.15
Area plane
0.25
0.15
2.54 nom.
1.27 nom.
technical drawings according specifications
Drawing-No.: 6.544-5188.01-4 Issue:1; 01.07.96
12200
Document Number: 81504 Rev. 1.6, 05-Sep-08
technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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Silicon Phototransistor, RoHS Compliant Package type: leaded Pack

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