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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4334DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 7.6192 14.4919 12.1471 50.5078 Ambient 6.6102 199.8001 63.9275 1.5220 Case Case Foot 7.2549 1.3088 6.1951 9.2148 Foot 56.7116 981.3135 7.1596 209.4213
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74988 Revision 14-Mar-07
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Si4334DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.6392 19.4985 16.2765 43.4147 Ambient 3.8394 24.2450 278.4762 1.4744
Case Case
Foot 1.9635 6.4357 5.4218 10.0724 Foot 995.5250 5.3792 21.8085 98.2315
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74988 Revision 14-Mar-07
Si4334DY_RC
Document Number: 74988 Revision 14-Mar-07
www.vishay.com

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